光交换中标签提取技术的研究

随着光交换技术的快速发展,在核心节点如何有效快速地提取标签一直是研究的热点.分别对SCM技术分离标签、FP-SOA技术分离标签和利用特定光码控制光开关分离标签进行了研究,分析了各种方法的优缺点,介绍了光极性法分离标签与净荷的原理,提出了利用光不同模式分别调制标签与净荷的结构模型.     

DPSK/SCM组合调制在光标记交换中的应用性能评估

基于光标记交换中的DPSK/SCM组合调制方案,分别仿真了SCM调制灵敏度、副载频和标记速率三个因素对DPSK信号性能的影响,得出副载波最佳调制灵敏度为0.3,最佳副载波频率的大小为净荷速率的一半或与之相等,且标记信号速率越高,净荷的接收性能越差.     

一种基于时域滤波的BOC无模糊捕获算法设计

针对二进制偏移载波(BOC)信号进行相关运算时存在多峰的特殊性,设计了一种基于时域滤波的BOC无模糊捕获算法。通过频域分析得到时域滤波器的频率响应,再反推出时域滤波器的系数,构建有限脉冲响应(FIR)滤波器。对不同算法进行仿真,结果证明该时域滤波器能很好地消除BOC信号自相关副峰。降低滤波器阶数,并设计可实现的基于时域滤波和多段匹配滤波器(MMF)－傅里叶变化(FFT)的BOC无模糊捕获算法,仿真分析表明该算法能很好地消除副峰,正确捕获信号。     

基于OCDM光码标签路由信息并行处理的研究

基于OCDM(光码分复用)技术和MPLS(多协议标签交换)技术,采用分离编解码方案对可并行光码标签路由技术进行研究.利用光极性特性实现标签与净荷的分离,采用FBG(光纤布拉格光栅)编码器对数据进行编解码.由于系统采用码分复用,允许不同净荷在时间上重叠,同一波长的OCDM标签路径在核心路由器中并行处理,提高了系统的吞吐量...     

光格型FIR增益均衡滤波器设计

为了避免传统的经验方法设计增益均衡滤波器(GEF)的主观性和不确定性,将电子学格型有限冲激响应(FIR)数字滤波的概念和算法移植到光学格型滤波器,提出一种基于掺Er光纤放大器(EDFA)自发增益(ASE)谱的频率采样设计法和光格型GEF的设计方案。该滤波器由数个各种分光比的波导耦合器经由具有单位时延差的光波导级连构成。分析了根据目标传递函数求解光格型阵列参数的算法,进而针对实际的ASE谱设计了40阶的GEF,在1527～1564nm波段内的增益平坦波动小于±0.4dB,并具有线性相频响应特性和互易性。     

一种建立在新的误差标准下的ARMA模型格型辨识法

本文根据格型预测滤波器的特点,修改了格型滤波器在用作ARMA模型辨识时的误差标准,提出了建立在新的误差标准下的ARMA模型格型辨识法。本算法结构简单,计算量小。计算机辨识试验表明,此算法具有良好的辨识性能。     

基于氮化硅微环和载波分离的可重构微波光子带通滤波器

基于Add-Drop型氮化硅微环滤波器,利用光学单边带调制和光载波分离的方法,实现可重构微波光子带通滤波器。滤波器带宽和带外抑制比分别达到726 MHz和37.0dB。并且通过改变光载波波长实现1.64~23.41GHz的滤波器频率调谐;通过调节微环耦合系数实现0.683~2.246GHz的滤波器带宽调谐,在带宽调谐范围内带外抑制比大于26dB。     

导航信号副载波调制频谱仿真平台设计

在导航信号中,副载波调制用于实现谱分离和更优的导航性能。目前的副载波调制形式主要有二进制偏移载波BOC、混合二进制偏移载波MBOC、交替二进制偏移载波AltBOC和二进制编码序列BCS等。在导航信号设计中,需要针对不同的副载波调制参数下的频谱特性进行仿真和对比,设计了一种基于GUI的副载波调制信号的频谱仿真平台,能够方便进行功率波形、自相关和谱分离系数(SSC)的参数仿真和对比。     

带不等式约束的线性相位FIR数字滤波器的Chebyshev设计

本文主要讨论带不等式约束的线性相位FIR数字滤波器的Chebyshev设计问题.我们知道,交错点组定理是Remez算法的理论基础,而此算法很好的解决了无约束线性相位FIR数字滤波器Chebyshev设计问题.本文中给出并证明了一个与交错点组定理类似的定理,并以此定理为依据设计算法求解具有不等式约束的线性相位FIR滤波器Chebyshev设计问题,此算法可通过对Matlab中remez()函数的修改来实现.     

多协议副载波/波长标签交换技术方案

通过多协议波长交换MtS(Multi-Protocol Lainbda Switching)技术向副载波域的延伸,该文提出了一种全新的宽带光网络技术方案以期实现电视网与Internet网的高效融合基于副载波标签和交换接口的多协议副载波/波长标签交换网络。利用新型复合标签,在独特的副载波/波长双层交换结构的基础上,实现了多层互动的流量工程和灵活的服务质量QoS(Quality of Service)保证,有效利用了波长资源。同时给出了双层标签交换机的框架结构,分析了其性能,并指出了该方案面临的关键问题及相关解决途径。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.