采用梯形棱镜波前分割的激光干涉光刻技术

光学光刻技术在微细加工和集成电路(IC)制造中一直是主流技术。随着IC集成度的提高,要求越来越高的光刻分辨力,但光学光刻的分辨极限受光刻物镜数值孔径(NA)和曝光波长(λ)的限制。激光干涉光刻技术具有高分辨、大视场、无畸变、长焦深等特点,其分辨极限为λ/4,在微细加工、大屏幕显示器、微电子和光电子器件、亚波长光栅、光子晶体和纳米图形制造等领域有广阔的应用前景。阐述了激光干涉光刻技术的基本原理。提出了一种采用梯形棱镜作为波前分割元件的激光干涉光刻方法。建立了相应的曝光系统,该系统可用于双光束、三光束、四光束和五光束等多光束和多曝光干涉光刻。给出了具有点尺寸约220nm的周期图形阵列的实验结果。     

激光光刻技术的研究与发展

光刻技术作为制备半导体器件的关键技术之一将制约着半导体行业的发展和半导体器件的性能。随着半导体工业的发展,集成电路的特征尺寸越来越小,光刻技术将面临新的挑战。分析了激光光刻技术,包括投影式光刻和激光无掩膜光刻技术的研究现状,着重介绍了极紫外光刻(EUVL)作为下一代光刻技术的发展前景和技术难点、激光无掩膜光刻技术的发展,特别是激光近场扫描光刻、激光干涉光刻、激光非线性光刻等新技术的最新进展及其在高分辨率纳米加工领域的应用前景。     

薄膜表面直接四光束激光干涉制备复眼的研究

基于四光束激光干涉光刻技术,在薄膜表面实现 了四光束激光直接干涉光刻制备微纳复眼结 构,为激光干涉 光刻研究提供了一个新的应用方向。对于多层复合薄膜,激光干涉光刻的效果与薄膜的透光 率相关, 即在一定范围内,透光率影响光刻结构的形成。在保持四光束激光干涉光刻系统波长和 入射角度不变 的条件下,通过改变能量得到不同尺寸的周期性孔阵结构,与复眼结构一致,发现透光率分 别为5%、30%和75%的薄膜在20～30mJ曝光时均可形成清晰的周期复眼 结构,且在25mJ时最为明显。在700～1200nm 波段使用反射率测试系统对光刻前后透光 率为5%、30%和75%的薄膜进行了反射率测试,测试结果表明经光刻后形成的结构反射率普遍 降低,可以在薄膜表面实现减反特性。     

美科学家推出软干涉光刻技术

美国科学家在纳米制作技术领域获得重大进展，通过将干涉光刻和软光刻技术结合在一起，推出称为软干涉光刻技术（SIL）的新型制造技术，可以用来扩展纳米生产工艺以大批量制造等离子体超材料和器件。与现有的技术相比，软干涉光刻技术具有许多明显的优势。作为一种大规模制作纳米材料的创新和廉价方法，利用它制成的新颖的先进材料，为开发和应用特殊与突发光学特性铺平了道路。     

激光全息用于微电子领域发展潜力的简析

激光技术已广泛应用于微电子领域大规模集成电路生产的各个环节。本文以激光全息光刻、激光全息掩模和激光干涉成像光刻为切入点,对激光全息用于微电子领域的潜力作一分析。     

21世纪微电子光刻技术

介绍了248nm,193nm,157nm准分子激光投影光刻的发展过程和下一代光刻技术（NGL）的实用化前景。     

基于激光干涉光刻技术的产品防伪包装设计研究

为了提高产品防伪包装设计效果,提出基于激光干涉光刻技术的产品防伪包装设计方法。利用光纤耦合激光传输控制多光束干涉信息,基于光纤波导分束形成技术,集成处理光束传播路径,基于光束振幅、相位和偏振联合调制方法,提取产品防伪包装的防伪状态特征量,基于振幅型或相位型的微结构衍射单元阵列传输方法,构建激光干涉光刻模型,实现四光束、五光束和六光束的多光束激光防伪。测试结果表明,所提方法的被篡改率最低为0.05%,解密时间较短,均在30 ms左右,MSE为0.673%,PSNR为47.40 dB,SSIM为0.975,采用该方法进行产品防伪包装设计,提高了产品的激光防伪能力,降低被篡改率。     

微光刻技术的发展

阐述了光刻技术的发展及其分辨极限,对准分子激光光刻技术及其发展作了比较详细的论述。     

0.1μm线宽主流光刻设备—193nm(ArF)准分子激光光刻

阐述了可实现 0 1μm线宽器件加工的几种候选光刻技术 ,对 193nm(ArF)准分子激光光刻技术作了较为详细的论述 ,指出其在 0 1μm技术段的重要作用 ,并提出了研制 193nm(ArF)光刻设备的一些设想。     

下一代光刻技术的设备

下一代光刻技术是指≤32nm工艺节点的光刻技术。介绍了下一代光刻技术与设备,包括X射线光刻技术、极紫外线光刻技术和纳米压印光刻技术等。     

用相干刻蚀制作大面积的二维纳米阵列

采用多级激光扩束获得大面积的均匀光场分布，利用相干刻蚀(IL)技术，制作了大面积(3．23cm^2)的二维(2D)周期阵列结构，如光栅和栅格，并以此阵列制备出空间周期为300nm的金属Ag、Au和磁性材料Ni的点阵结构。     

Table top nanopatterning with extreme ultraviolet laser illumination

Patterning with extreme ultraviolet light generated by a compact, bright laser source operating at a wavelength of 46.9 nm is demonstrated using two complementary approaches: multiple beam interferometric lithography and de-magnifying projection. Features with sizes ranging from 370 nm to 60 nm were printed in a few seconds in poly-methyl methacrylate resist. These proof-of-principle experiments demonstrate practical table-top nanopatterning tools based on extreme ultraviolet lasers for nanotechnology applications.     

畸变的掩模对光刻图形质量的影响

基于描述激光直写邻近效应的双高斯函数之差抗蚀剂模型,计算分析了邻近效应带来的掩模加工的偏差,及其对光刻图形质量的影响.模拟结果表明,当掩模的特征尺寸为1.5μm时,激光直写所加工掩模的相对面积偏差达5%,并对最终的光刻图形的质量产生严重影响.     

无机激光热刻蚀材料的研究进展

激光热刻蚀技术是近年发展起来的利用激光热刻蚀薄膜的热变化阈值特性突破光学衍射极限进行纳米图形制备的新技术,在亚波长纳米结构器件和高密度光盘母盘制造等领域具有广阔的应用前景.阐述了激光热刻蚀技术的基本原理和特点,以及对激光热刻蚀材料性质的要求,综述了相变型激光热刻蚀薄膜材料(包括硫系相变薄膜材料、金属亚氧化物薄膜材料和陶...     

Self-Healing Lithographic Patterning of Perovskite Nanocrystals for Large-Area Single-Mode Laser Array

Lead halide perovskites exhibit extraordinary optoelectronic performances and are being considered as a promising medium for high-quality photonic devices such as single-mode lasers. However, for perovskite-based single-mode lasers to become practical, fabrication and integration on a chip via the standard top-down lithography process are strongly desired. The chief bottleneck to achieving lithography of perovskites lies in their reactivity to chemicals used for lithography as illustrated by issues of instability, surface roughness, and internal defects with the fabricated structures. The realization of lithographic perovskite single-mode lasers in large areas remains a challenge. In this work, a self-healing lithographic patterning technique using perovskite CsPbBr₃ nanocrystals is demonstrated to realize high-quality and high-crystallinity single-mode laser arrays. The self-healing process is compatible with the standard lithography process and greatly improves the quality of lithographic laser cavities. A single-mode microdisk laser array is demonstrated with a low threshold of 3.8 µJ cm⁻². Moreover, the control of the lasing wavelength is made possible over a range of up to 6.4 nm by precise fabrication of the laser cavities. This work presents a general and promising strategy for standard top-down lithography fabrication of high-quality perovskite devices and enables research on large-area perovskite-based integrated optoelectronic circuits.     

基于准分子激光工艺制作X射线光掩膜

LIGA工艺是一项能够应用于制造三维微机械结构的微细加工技术,但制作掩膜版工艺复杂、成本高。为了解决商用的微光学系统制造成本问题,在Au薄膜上用准分子激光直写的方法制作掩膜,这样既能够很快得到雏形,同时也能够降低制作的掩膜版的成本。分析讨论了基于电子束制作掩膜版和基于准分子激光制作掩膜版两种方法,得出了准分子激光制作的掩膜在成本和时间上都有优势的结论。将通过准分子激光技术制作的掩膜置于X射线下,在PMMA基板上可以加工很好的三维微结构。通过依次直接激光烧蚀金薄膜可以加工具有一系列微球状结构的吸收体图形,再将此图形转写到PMMA基板上,可以得到的最低像素为25μm。     

Thermomechanical Reliability Study of Flip Chip Solder Bumps: Using Laser Ultrasound Technique and Finite Element Method

Current techniques for nondestructive quality evaluation of solder bumps in electronic packages are either incapable of detecting solder bump cracks, or unsuitable for in-line inspection due to high cost and low throughput. As an alternative, a solder bump inspection system is being developed at Georgia Institute of Technology using laser ultrasound and interferometric techniques . This system uses a pulsed Nd:YAG laser to induce ultrasound in electronic packages in the thermoelastic regime; it then measures the transient out-of-plane displacement responses on the package surfaces using laser interferometric technique. The quality of solder bumps in electronic packages is evaluated by analyzing the transient responses. This paper presents a systematic study on thermomechanical reliability of flip chip solder bumps using laser ultrasound–interferometric inspection technique and finite element (FE) method. The correlation between the failure parameter extracted from FE simulation for evaluating solder bump reliability and quality degradation characterization of solder bumps through noncontact, nondestructive laser ultrasound testing has also been investigated.      

Measurement of the swept-frequency carrier-induced FM response of asemiconductor laser using an incoherent interferometric technique

The swept frequency deviation response of a distributed feedback (DFB) laser is measured using an incoherent interferometric technique. Unlike previous interferometric techniques, this technique is independent of the phase relationship between the optical fields in the two interferometer paths. The theoretical background is discussed, and measurements yielding an FM deviation response of ±1 dB from 0.1 to 2.9 GHz with an efficiency of ~300 MHz/mA are reported for a 1.55-μm DFB laser