AFDX实时流量的时间确定性中间件接入模型研究

为保证COTS平台下的航空电子应用在航空电子全双工以太网(AFDX)上的时间确定性接入,设计了AFDX网络实时流量的中间件接入模型。通过基于中间层驱动过滤机制的协议转换,实现了双边网络的协议对接,并给出了帧顺序号(SN)的插入方法;通过对虚拟链路(VL)在时间上进行有效分配,避免了速率受限的数据流对物理链路的争用,在实现单条VL的BAG整形基础上提出了使实时流量抖动最小的VL复合时间调度算法。搭建典型实验环境对该模型进行仿真实验,结果表明,中间件模型能准确地实现数据帧TCP/IP协议与AFDX协议格式的相互转换,且该时间调度算法大大减小了VL复合所产生的抖动,保证了数据流传输的时间确定性。     

AFDX实时流量的时间确定性中间件接入模型研究

为保证COTS平台下的航空电子应用在航空电子全双工以太网（ AFDX）上的时间确定性接入，设计了AFDX网络实时流量的中间件接入模型。通过基于中间层驱动过滤机制的协议转换，实现了双边网络的协议对接，并给出了帧顺序号（ SN）的插入方法；通过对虚拟链路（ VL）在时间上进行有效分配，避免了速率受限的数据流对物理链路的争用，在实现单条VL的BAG整形基础上提出了使实时流量抖动最小的VL复合时间调度算法。搭建典型实验环境对该模型进行仿真实验，结果表明，中间件模型能准确地实现数据帧TCP/IP协议与AFDX协议格式的相互转换，且该时间调度算法大大减小了VL复合所产生的抖动，保证了数据流传输的时间确定性。     

基于AFDX网络演算的性能分析技术研究

航空全双工交换式以太网(AFDX)是用于安全关键应用领域的数据传输网络,它采用带宽划分提供确定性的服务质量。AFDX将用于新一代航空电子系统的数据传输网络。网络演算是一种基于非线性代数的确定性排队理论,是计算延迟和积压等端到端性能参数的确界的有效工具。本文围绕网络演算在AFDX网络中计算延迟边界的应用及近年研究成果进行了总结和分析比较,并指出了未来的研究方向。     

AFDX构架及协议分析

从航空电子集成的角度描述了航空电子全双工交换式以太网(AFDX)通信网络的概念、结构、调度机制和协议栈,给出了AFDX端口和网络交换机的设计思路和实现方案,预计了采用AFDX协议总线构建航空电子系统时系统的失效概率.     

保证航电波分复用网络实时性的虚拓扑设计

针对航空电子波分复用网络消息的实时性要求,对航空电子网络的结构进行了研究,分析了在该网络中造成消息延迟的主要因素为转发延迟。进而对航空电子网络建模,根据WDM网络的资源特性进行拓扑的约束,提出了基于综合考虑虚拓扑跳数以及消息的带宽保证为目标的线性规划算法,在此基础上给出了大型网络的一个启发式算法,采用该线性规划算法对NSFNet网络拓扑进行了仿真验证。仿真结果表明,综合考虑虚拓扑跳数和消息带宽能减少消息的延迟,保证了网络实时性。     

基于有限波长变换器的多播调度算法研究

多播调度算法是DWDM多播光交换网的核心、关键技术.通过选择一组无冲突的多播连接请求实现点对多点的数据传输,在网络中同时调度最大数目的此类连接请求是一个非确定的多项式难题.为此,文章提出了一种基于输出光纤共享有限波长变换器的光交换结构的新近似调度算法,通过仿真证明该算法与现有算法相比,提高了网络的吞吐量.     

航空电子全双工交换式以太网编址方案设计

目前国内对航空电子全双工交换式以太网(AFDX)的研究还停留在标准的研究和单个的端系统仿真测试阶段,缺乏能用于AFDX测试的实际网络.为此,提出了一个用于机载数据网络的网络层编址方案,设计了一个AFDX通信网络系统,将其作为一个AFDX网络半实物仿真测试系统的底层架构应用于实际测试.测试结果表明,系统具有更强的实时性和连续性.     

AFDX的分布式仿真

航空电子全双工交换式以太网(AFDX,Avionics Full Duplex Switched Ethernet)技术基于IEEE802.3以太网和TCP/IP通用原理,对于商用货架(COTS)网络化技术如何应用于未来飞机数据网络给出了定义[1],已经成为了一种新的航空电子数据网络标准。由于AFDX协议以及航空总线布局的复杂性,采用网络仿真技术可以大大缩短网络建设周期,减小网络建设的投资风险。为了模拟AFDX的网络性能,尤其是其在数据通信方面的高可靠性和高实时性,根据AFDX协议及其传输和交换原理,建立了基于高级仿真体系结构(HLA)的AFDX分布式仿真体系,并对各子系统的构成以及仿真执行流程进行了研究。通过对仿真结果的分析,验证了仿真模型的正确性,并表明仿真设计满足系统性能要求。     

基于CPCI系统的高速数字通信接口电路设计与应用

随着航空电子系统的迅速发展,系统间频繁的信息交换和共享对数据传输实时性和可靠性的要求日益提高。针对这一要求,提出了一种基于CPCI系统下实现AFDX协议端系统接口功能的方法,为通用信号处理平台与AFDX网络的连接提供接口,实现AFDX协议数据的高速、可靠性传输。给出了采用FPGA实现该功能的整体方案,详细描述了基于FPGA硬件开发的各个模块的设计,介绍了基于Micro Blaze的嵌入式软件设计方法,在EDK中采用C语言实现AFDX协议IP层以上的封装和解封装。最后经过仿真验证和测试,验证了设计的正确性。     

基于MARTE的IMA系统时间资源可调度配置验证

目前综合模块化航空电子系统(IMA)在资源配置方面有非常高的安全可靠性需求,其中时间资源的可调度性配置验证也显得至关重要。本文在AFDX网络架构下提出了一种IMA系统时间相关概念的MARTE建模和时间资源可调度配置的正确性验证方法。建立了IMA系统通信虚拟链路、AFDX终端、分区以及进程等相关元素到MARTE模型元素的建模规则,并设计了基于可调度分析工具MAST的时间资源可调度配置验证框架,最后利用相关实例进行仿真和分析得到验证结果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.