球面波环式散射远近场变换算法研究

提出了一种球面波照射下获得飞行器类目标远场RCS的变换算法.根据ISAR成像中目标反射率空间分布特性不随测试状态改变.建立了多散射中心模型;针对隐身目标自身高度较小、在鳖直面上满足远场条件的特点,将入射球面波等效为柱面波照射;以目标像作为二次辐射源,导出了远近场之间的依赖关系式;利用目标全角域近场散射信息进行外推,获得了远场条件下各个角度的RCS值.该算法采用对频率求导的方法,降低了公式简化中的误差,又满足了步进频率系统的测试要求.仿真和实验表明算法准确有效.     

近远场变换技术在目标特性测试中的应用

对近远场变换技术在目标特性测试中的应用进行了研究,通过对飞机模型的仿真结果进行近场成像处理、远场计算重构以及卷积积分修正等处理,可将近场散射变换到远场.同时,近远场变换技术能够有效解决在不满足远场条件下测量雷达散射截面积(RCS)时遇到的问题.通过对金属导体圆柱、导弹模型、常规飞机模型、角反射器等进行RCS测试,并对单...     

耦合目标近场散射外推技术研究

针对具有多次散射的耦合目标在不满足远场条件下测量的散射方向图发生畸变的问题,通过分析耦合目标的近场-远场转换关系,提出一种"多发多收"模式的近场散射外推方法.在获得全角域的近场双站信息后,对各角度近场接收的散射数据进行外推处理,然后根据互易定理,将外推后的数据等效为"远场发射、近场接收"数据.接下来对该数据再进行一次外推,满足"远场发射、远场接收"的条件,最后取出对角线上的元素获得各角度的远场RCS（Radar Cross Section,RCS）.通过建立存在强耦合机制的二面角和腔体结构模型,利用FEKO和MATLAB软件对方法进行仿真,将"多发多收"外推的结果与远场RCS进行比对.结果表明：该方法得到的结果与远场RCS方向图吻合良好,全角域均值误差小于1dB,验证了方法的有效性.     

双站散射模式响应的分析与应用

基于电磁散射积分方程求解的矩量法,将入射和散射的平面波分解成含有Bessel函数的模式叠加,提出了目标双站散射模式响应的概念,得到目标远场双站雷达散射截面(RCS)与模散射响应之间成傅立叶变换的关系.根据基函数的性质阐明了模散射响应矩阵具有带限低通特性、互易对称性和近似成对角分布稀疏特性.模式散射响应是与外在观测角无关...     

基于柱面扫描近场成像的RCS 测量方法研究

该文提出一种基于柱面扫描近场成像的RCS(Radar Cross Section)测量新方法:以理想的各向同性点散射中心模型为核心假设,通过详细的理论推导给出了一种具有通用性的基于柱面扫描近场成像的RCS 测量方法。该方法先得到目标的3 维雷达散射图像,再通过这些等效理想散射中心的散射场叠加获得远处散射场进而给出目标的远场RCS 值。该方法不仅能得到被测目标的3 维雷达散射图像,还能获得一定立体角域的目标远场RCS。相比只能得到2 维雷达散射图以及2 维平面角域RCS 结果的圆迹扫描测试相比,该文所提的柱面扫描测试能得到更多的目标散射信息,具有较强的实用性。仿真结果验证了新方法的可靠性。      

一种利用外推获得飞行器目标远场RCS方法研究

提出了一种球面波照射下获取室内飞行器目标RCS的方法。室内RCS测试难以满足远场条件,造成散射方向图畸变。针对飞行器目标机身高度较小,可将入射球面波等效为柱面波,然后借助参考目标,导出其在柱面波与平面波照射下的修正系数g(x)。再次,建立被测目标近距散射场与g(x)之间的关系,从而得到目标等效平面波照射下的远场RCS。仿真表明:与理论值相比,外推后的结果在有限角域内吻合良好。实验在微波暗室测量了飞行器目标在两个不同距离下的散射场,外推后RCS具有一致的收敛性,并与电磁计算结果进行比较,验证了外推技术具有较高的精度。另外,该方法对目标口径、纵深尺寸没有苛刻的限制。     

一种面向工程的局部RCS检测算法研究

飞行器的蒙皮在服役期间容易产生腐蚀或破损进而增大飞行器的雷达散射截面,因此需要对修复后的区域进行局部雷达散射截面(Radar Cross-Section,RCS)检测以评估修复效果。研究了一种面向工程的近远场变换算法以实现对修复区域的RCS检测,该算法基于球面波环式展开算法,并在传统近远场变换算法的基础上使用渐进式代替传统的汉克尔函数,设计了一种适用于工程应用的近远场变换算法。使用HFSS和Matlab软件对设计的算法进行了仿真验证,结果表明算法能够求得修复后局部小区域的RCS。     

雷达目标多维特性分析与应用

实际目标的雷达特性是多维空间中的函数,但雷达观测只能获得多维特性在低维空间中的切片或投影,深入分析有限的雷达观测数据蕴含的目标特性信息,对提升目标检测识别性能有重要意义.从三维散射率分布函数出发,推导了不同维度雷达图像与散射率分布函数积分投影的傅里叶变换对关系,并通过分析该关系所隐含的近似条件,指出实际目标散射特性的复杂性,得出了多维空间中形式化的散射模型.基于散射中心和雷达图像从不同的角度对多维散射模型的低维映射进行分析,给出了若干目标特性分析实例,包括棱形结构的相位逆转现象、多次散射的极化相位关系、空间目标腔体结构的色散现象、柔性结构的图像散焦效应等.形式化多维散射模型和低维映射研究方法为分析复杂目标的雷达散射特性提供了参考.     

用TLM法模拟二维三维电磁散射近场和远场

数值模拟二维等腰直角三角形导电柱体和三维方形导电柱体对高斯脉冲平面波的电磁散射近场和远场分布。数值结果表明在三角柱体的电磁散射近场中镜面反射并不明显,但在远场却非常明显并且成为最主要的散射方向。三维电磁散射的数值结果表明,二次辐射是电磁散射的主要机理,并且在多个导体目标情况下,各自的散射场将互相干涉形成总的散射场。     

一种近场条件下获取远场RCS 的方法

针对隐身目标自身高度较小、在竖直面上满足远场条件的特点,提出了一种柱面波照射下获得目标远场RCS 的变 换算法。首先根据ISAR 成像中目标反射率空间分布特性不随测试状态而改变的性质,建立多散射中心模型;将入射球面波 等效为柱面波照射;然后利用柱面波在二维直角坐标系下的展开,导出近远场之间的变换关系式。仿真分析表明算法准确有 效。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.