一种新型超宽带带通滤波器的设计

针对超宽带(UWB)系统易受无线网络信号干扰及传统的超宽带带通滤波器阻带较窄,不能有效抑制谐波的问题,提出了一种新型的UWB带通滤波器,该滤波器由两级交指梳状耦合谐振器级联组成,通过增加耦合指的个数来实现陷波特性,然后在两个交指谐振器的中间添加一个槽线锥形谐振器,使该滤波器具有抑制高次谐波特性,达到拓宽高阻带的效果,同时由于槽线谐振器的加入,陷波频段的抑制电平进一步提高.实验结果证明,所设计的滤波器既能保证3.1～10.6 GHz频段内的插入损耗小于3 dB,陷波频段为5.7～5.8 GHz,陷波频段的抑制电平高达-43 dB,同时又能拓宽高频阻带.     

基于开路T型结构的小型化超宽阻带滤波器设计

传统滤波器由于寄生通带的存在,其高频阻带性能较差。随着超宽带雷达系统和超宽带通信系统的发展,小型化宽阻带的滤波器已成为一项紧迫的技术课题。该文论述了一种普适性的基于开路T型结构的小型化超宽阻带滤波器结构,这种滤波器和传统滤波器相比,结构极为紧凑,5倍基频范围内的寄生通带均被抑制,而通带性能保持良好。基于此结构实际制作了一个截止频率为2.9 GHz的低通滤波器,测量得到的通带内平均插入损耗仅0.67 dB,带内平均驻波比为1.33,过渡带陡峭,40 dB矩形系数仅1.096,而所测得的阻带从3.23 GHz到10.30 GHz之内谐波抑制大于36 dB,从10.30 GHz到15 GHz之内谐波抑制大于27 dB;该滤波器的长度仅为传统的同类型滤波器的长度的37.1%,面积大大减小。仿真和测量结果表明该类型滤波器同时满足了小型化和宽阻带的性能需求。     

基于微带-槽线过渡的超宽带滤波器

基于电磁耦合微带-槽线过渡结构,设计了一个结构紧凑、具有陷波和超宽阻带的超宽带带通滤波器。通过嵌入1个终端短路的阶跃阻抗微带枝节和底层的槽线耦合产生1个可调节的陷波;同时,在上层微带输出端添加开路枝节和扇形结构获得超宽阻带的特性。该超宽带带通滤波器的中心频率为6.85 GHz,3dB通带为1.95~13.15GHz,相对带宽达到148%。与以往的超宽带带通滤波器相比,其具有结构简单、尺寸小和带外抑制良好等特点,仿真和测试结构吻合较好。     

基于DGS 结构的微带岔线型带通滤波器设计

本文介绍了一种基于缺陷地结构(DGS)的微带岔线型宽带带通滤波器的设计过程。此滤波器以四分之一波长的开路枝节型带通滤波器为原型进行设计和改进,引入了微带岔线和DGS 结构,在增加通带带宽和阻带带宽的同时,使滤波器的带外谐波抑制和带内回波损耗得到了很大的改善。采用HFSS 三维场仿真软件进行S 参数的仿真,从仿真结果可 以看出,所设计的带通滤波器中心频率为11.5GHz,其3dB 相对带宽大于50%,带内插损小于0.3dB。此外,在1-6GHz的第一阻带内,滤波器的带外抑制大于20dB,最大抑制度为52dB;在15-24GHz 的第二阻带内滤波器的带外抑制大于20dB,最大抑制度为46dB。整个滤波器尺寸仅为12mm × 16mm。     

宽阻带小型化双频带通滤波器

文中提出了一种具有宽阻带的紧凑型双频带通滤波器,它采用了折叠短路枝节负载谐振器、紧凑型微 带单元谐振器(CMRC)和阶跃阻抗谐振器结构。由于多个谐振器产生了五个可控传输零点(TZ),该滤波器实现了两个 通带之间的良好隔离度以及宽阻带特性。制作并测试了尺寸紧凑的双频带通滤波器实验样品,测试结果显示,第一通 带和第二通带的中心频率/ 插入损耗分别为0. 66 GHz/0. 8 dB 和1. 73 GHz/0. 7 dB,阻带频率高达10. 5 GHz,抑制水平 超过15 dB。     

V波段波导短截线带通滤波器设计

设计和分析了V波段E面波导短截线带通滤波器。利用E面波导短截线带阻滤波器的通带-阻带特性与矩形波导的高通特性相结合,将波导短截线带阻滤波器嵌入WR-15矩形波导中,设计具有高阻带抑制性能、过渡边带陡峭、宽阻带范围的V波段宽带带通滤波器。采用"场"、"路"相结合的方法设计的带通滤波器,仿真与测试结果吻合较好,验证了该设计方法的有效性。经测试实现了18%的1 dB带宽,在50.0～57.8 GHz通带内插入损耗≤1 dB,阻带频率58.9 GHz处抑制为43.6 dBc。     

基于齿状缺陷地的宽阻带交叉耦合SIW滤波器

提出了一种齿状缺陷地低通传输线结构,该低通传输线由多级齿状缺陷地构成,通过调节齿状缺陷地枝节长度,可以有效调节低通和阻带频率范围。利用该齿状缺陷地结构,级联交叉耦合扇形基片集成波导(SIW)滤波器,该文设计了一款高带外抑制的宽阻带滤波器,与传统SIW带通滤波器相比,其矩形系数K_{40 dB}=2,阻带范围大于2倍的中心频率,具有较好的通带和阻带选择特性。测试结果表明,滤波器的中心频率为10.35 GHz,3 dB和40 dB带宽分别为507 MHz和1.05 GHz,插入损耗优于1.47 dB,与仿真结果基本一致。     

基于缺陷地抑制高阶谐波的带通滤波器设计

采用微带线设计的平行耦合滤波器(MCL-BPF)在通带以外往往产生谐波,出现寄生频段。利用缺陷地结构(Defected Ground Structure,DGS)的单极点带阻特性和慢波效应可以改善寄生通带,抑制谐波输出。对2.4GHz的传统微带平行耦合滤波器和改进型带通滤波器进行了仿真设计与加工测试。实测结果与仿真数据良好吻合,所提出基于斜哑铃型DGS的带通滤波器(S-DGS-BPF)可抑制至四阶谐波,抑制度达到-22dB以下,阻带为3-10GHz,中心频率处回波损耗为-26.93dB。并且改进型滤波器的尺寸缩小了约10%。     

采用共面波导/微带耦合结构的超宽带带通滤波器的改进设计

本文提出了一种超宽带带通滤波器的改进设计方法,通过这种设计方法能够有效展宽阻带,实现谐波抑制的效果.该设计方式基于微带和共面波导(CPW)耦合的结构,其中,微带与输入,输出共面波导分别设计在介质基板的两个不同面上.本文在输入/输出端口附近的共面波导中心导带处做了改进,用于抑制高频段的谐波,从而在保证通带性能良好的基础上,有效抑制了寄生通带.文中给出了改进后滤波器的结构以及通过仿真和实验获得的性能参数,结果显示该滤波器具有良好的谐波抑制作用,使得阻带的高端达到20.0GHz,约为中心频率的3倍左右.     

交叉耦合盒式结构微带带通滤波器设计

设计了一种交叉耦合盒式结构微带带通滤波器。采用耦合矩阵方法对交叉耦合盒式结构带通滤波器频率响应特性进行了分析,并且在此基础上研制了一种基于E型双模谐振器的非对称响应带通滤波器。滤波器中心频率为6.4 GHz,带宽为0.8 GHz,最小带内插损为1.9 dB,两个传输零点分别位于4.5 GHz 和7.6 GHz,上下阻带抑制度分别大于35dB、47dB。滤波器有效尺寸约为0.34λg *0.43λg。该滤波器具有结构紧凑、带外抑制度高、选择性高的优点。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.