共查询到19条相似文献,搜索用时 125 毫秒
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研究了在热载流子注入HCI(hot-carrier injection)和负偏温NBT(negative bias temperature)两种偏置条件下pMOS器件的可靠性.测量了pMOS器件应力前后的电流电压特性和典型的器件参数漂移,并与单独HCI和NBT应力下的特性进行了对比.在这两种应力偏置条件下,pMOS器件退化特性的测量结果显示高温NBT应力使得热载流子退化效应增强.由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场,使得器件特性严重退化.给出了NBT效应不断增强的HCI耦合效应的详细解释. 相似文献
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当器件尺寸进入深亚微米后,SOI MOS集成电路中的N沟和P沟器件的热载流子效应引起的器件退化已不能忽视。通过分别测量这两种器件的跨导、阈值电压等参数的退化与应力条件的关系,分析了这两种器件的退化规律,对这两种器件的热载流子退化机制提出了合理的解释。并模拟了在最坏应力条件下,最大线性区跨导Gmmax退化与漏偏压应力Vd的关系,说明不同沟长的器件在它们的最大漏偏压以下时,能使Gmmax的退化小于10%。 相似文献
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研究了在热载流子注入HCI(hotcarrier injection)和负偏温NBT(negative bias temperature)两种偏置条件下pMOS器件的可靠性.测量了pMOS器件应力前后的电流电压特性和典型的器件参数漂移,并与单独HCI和NBT应力下的特性进行了对比.在这两种应力偏置条件下,pMOS器件退化特性的测量结果显示高温NBT应力使得热载流子退化效应增强.由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场,使得器件特性严重退化.给出了NBT效应不断增强的HCI耦合效应的详细解释. 相似文献
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The hot-carrier-induced (HCI) degradations of silicon-on-insulator (SOI) lateral insulated gate N-type bipolar transistor (NLIGBT) are investigated in detail by DC voltage stress experiment, TCAD simulation and charge pumping test. The substrate current Isub and on-state resistance Ron at different voltage stress conditions are measured to assess the HCI effect on device performance. The electric field and impact ionization rate are simulated to assist in providing better physical insights. And charge pumping current is measured to determinate the front-gate interface states density directly. The degradation mechanisms under different gate voltage stress conditions are then presented and summarized. 相似文献
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The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS(SG-NLDMOS) transistors are investigated in detail by a DC voltage stress experiment,a TCAD simulation and a charge pumping test.For different stress conditions,degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented.Then the effect of various doses of n-type drain drift(NDD) region implant on R_(on) degradation is investigated.Experimental results show that a lower NDD dosage can redu... 相似文献
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随着电源电压的不断降低和芯片面积的不断减小,电荷泵的效率已成为MOS电荷泵电路设计过程中最为人们关心的问题之一,由于传统的Dickson MOS电荷泵在每个传输管上都有问值电压的损失,使得它的效率很低,为了解决这一问题,各种电荷泵电路在不断地出现,四相位MOS电荷泵电路自发明以来,得到了广泛的应用,但是它需要产生四个时钟,增大了面积;更为重要的是,由于四相位电荷泵要求在一个周期内提供四个互不重叠的高电平,从而限制了时钟频率的提高。本文在四相位电荷泵的基础上,提出了一种新型的二相位的电荷泵电路,解决了提高效率和增加芯片面积以及时钟频率提升的矛盾。 相似文献
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针对使用标准CMOS技术实现的传统电荷泵输出电压较低的不足,文中提出将基本的电荷转移开关进行改进的MOS电荷泵,在泵送增益增加电路的基础上,通过在泵的输出级增加第3个控制信号来提高电荷泵的电压增益,以得到更高的输出电压,将其作为无线传感器的能量收集电路。仿真结果表明,该改进型电荷泵电路适合于低电压设备,并具有较高的泵送增益。其输出电压在同类电荷泵中最高,在1.5 V电源条件下,可高达8.5 V。 相似文献
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《半导体学报》2009,30(12)
An improved hot carrier injection (HCI) degradation model was proposed based on interface trap gen-eration and oxide charge injection theory. It was evident that the degradation behavior of electric parameters such as I_(dlin), I_(dsat), G_m and V_t fitted well with this model. Devices were prepared with 0.35μm technology and different LDD processes, I_(dlin) and I_(dsat) after HCI stress were analyzed with the improved model. The effects of interface trap generation and oxide charge injection on device degradation were extracted, and the charge injection site could be obtained by this method. The work provides important information to device designers and process engineers. 相似文献
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A diagram representation method is proposed to interpret the complicated charge pumping(CP) processes. The fast and slow traps in CP measurement are defined.Some phenomena such as CP pulse rise/fall time dependence, frequency dependence,the voltage dependence for the fast and slow traps,and the geometric CP component are clearly illustrated at a glance by the diagram representation.For the slow trap CP measurement,there is a transition stage and a steady stage due to the asymmetry of the electron and hol... 相似文献