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1.
高温气体的温度场测量,一直以来是一项重大科研课题,而利用可调谐二极管激光吸收光谱法(TDLAS)测量燃烧气体温度的基础是吸收谱线对的选择。本文首先系统地给出吸收分子及其谱线对的选择标准,而后重点对HITEMP数据库中1547.72 nm附近的水分子吸收谱线进行研究与筛选,通过仿真分析验证了谱线对6460.595 cm-1和6461.271 cm-1适合用于TDLAS高温气体温度测量系统,最后通过搭建的实验设备验证了这一对吸收谱线对很适合用作氢气或碳氢化合物做燃料的高温气体的温度测量,对TDLAS温度场测量系统的设计具有参考意义。  相似文献   

2.
开发了一种可调谐半导体激光吸收传感器,用于测量气体的温度,应用扫描波长吸收谱和固定波长调制谱探测水蒸气在7 454.4 cm-1和7 185.6 cm-1附近的两条吸收谱线。传感器可实现绝对温度测量,固定波长调制谱更可实现10 kHz以上的测量带宽。传感器的性能和精度在已知温度和压力的静室中进行测量验证,在600~1 000 K的设定温度范围,两种方法的测量误差(RMS)都小于2%。表明可调谐半导体激光吸收光谱(TDLAS)传感器对于均匀的流场具有快速和精确的温度测量能力。  相似文献   

3.
基于TDLAS的气体温度测量   总被引:3,自引:2,他引:3  
介绍了基于可调谐半导体激光吸收光谱(TDLAS)的气体温度测量原理,选择了1对O2吸收谱线13 163.78 cm-1和13 164.18 cm-1,理论计算了此谱线对线强比值R与温度的关系,在搭建的高温实验装置上实现了O2温度和浓度的同时测量,并分析了压力对温度测量的影响。实验结果表明:在823~1 323 K内,温度测量的线性误差为0.65%。最大波动为±15 K,压力变化对温度测量的影响可忽略不计。  相似文献   

4.
可调谐二极管激光吸收光谱(Tunable Diode Laser Absorption Spectroscopy,TDLAS)技术是一种具有高灵敏度、高分辨率的气体吸收光谱检测技术,具有响应快、精度高、单模特性优秀、通用性强等优势。TDLAS直接吸收法通过测量绝对吸收强度来计算待测气体温度和浓度,但容易受到颗粒物浓度、激光强度波动等影响。TDLAS波长调制法采用高频正弦信号对激光器进行调制,使得激光输出频率和强度同时受到调制,具有高信噪比和灵敏度的特点,但是需要通过标定实验或复杂的算法来确定气体参数。因此,通过吸收光谱理论和波长调制理论,推导出蕴含分子吸收信息的谐波通项表达式,并在此基础上分析谐波信号与待测气体绝对吸收强度之间的关系,建立了一种基于谐波信号的绝对吸收强度测量算法。以NH3分子在1 531 nm附近的谱线为例进行数值分析,发现调制幅度达到a=0.032 cm-1(调制系数m=2)时,仿真结果与理论计算结果(a=0)相对误差不超过2%,进一步验证了算法的可靠性与准确性。  相似文献   

5.
利用输出波长在2.0 μm处的分布反馈激光器对CO2气体的两条特征谱线进行扫描以实现气体温度的测量。介绍了利用可调谐激光吸收光谱方法进行温度测量的基本原理,提出了用多线组合非线性最小二乘法拟合高温吸收光谱的吸光度方法。常压下在静态高温炉中进行了实验,设定温度为900 K~1200 K时,经实验得到的温度值与热电偶测量值的温差在8%以内,计算得到CO2的5007.7874 cm-1吸收线强与理论计算值相对误差小于14%。为今后的气体温度测量及多参数同时测量提供了借鉴。  相似文献   

6.
基于激光吸收光谱技术的超声速气流参数测量   总被引:1,自引:0,他引:1       下载免费PDF全文
采用可调谐半导体激光吸收光谱(TDLAS)技术,针对超声速直连台隔离段内超声速气流温度、组分浓度、速度和质量流量进行了测量.选择H2O的两条吸收谱线7 185.597 cm-1和7 454.445 cm-1,采用直接吸收-分时扫描方式,测量流场静温为899 K,并结合吸收面积得到H2O的组分浓度20.7%.根据安装在流场上游和下游成60的两条光路,测量流场速度为1 205 m/s,结合壁面压力传感器,测量流场的质量流量为1 500.49 g/s,较真实值偏差为5.23%.TDLAS测量系统实现了对超声速气流多参数快速线测量.  相似文献   

7.
为了有效地测量风洞中的气体流速,以激光多普勒频移原理为基础,结合波长调制可调谐二极管激光吸收光谱(TDLAS)技术,利用HITRAN数据库,选取氧气(O2)分子在13144.5 cm-1附近的吸收谱线作为研究对象。在软件中建立了气体流速测量模型,模拟分析了流速测量结果;在实验室中利用超声风洞装置,建立了一套基于波长调制-TDLAS技术的流速测量系统,通过实验,提取出O2的二次谐波信号,根据O2分子吸收谱线的二次谐波信号的频移量反演风洞中的气流速度。实验结果表明,在实验室环境下,系统测量流速达到707.6 m/s,符合超声风洞的设计,测量误差范围为5.47%。实验结果为基于波长调制-TDLAS方法测量流速的小型化系统研制以及飞行实验进行了前期准备。  相似文献   

8.
提出了一种利用TDLAS吸收光谱技术,通过测量一氧化碳吸收谱线的二次谐波和四次谐波的最大值,从而准确计算出一氧化碳浓度的新方法。这种方法的的特点在于,测量结果与激光器的调制强度无关。并且,测量的相对误差与半导体激光器的调制电流所引起的频率变化量的差异没有关系。结果表明,这种利用在吸收谱线上的特殊频点上的二次谐波和四次谐波的相对强度来计算气体浓度的方法,能够高效、实时和高精度地测量一氧化碳气体浓度。  相似文献   

9.
可调谐激光吸收光谱技术监测燃烧中CO检测方法比较   总被引:1,自引:1,他引:0  
可调谐二极管激光吸收光谱(TDLAS)技术是利用二极管激光器的波长调谐特性,获得被选定的待测气体特征吸收谱线的吸收光谱,从而对待测气体进行定性或定量分析.TDLAS技术与开放式的多次反射池相结合,分别利用二次谐波探测方法和自平衡加波长调制的新型检测方法,测量了酒精喷灯火焰的CO浓度.测量结果表明,自平衡加波长调制的新型检测方法与二次谐波检测方法相比,不仅使检测限提高了16.3倍,还有效地消除了激光器、火焰的光强波动影响,可以应用在燃烧控制及喷焰气体CO浓度测量等多个领域.  相似文献   

10.
王琳琳  贾明 《激光杂志》2020,41(3):25-28
可调谐半导体激光吸收光谱(TDLAS)技术结合半导体激光器可调谐的特点及气体分子对特定波长能量光的吸收特性,凭借灵敏度高、响应时间短等优势广泛应用于气体浓度检测。TDLAS技术气体浓度检测包括波长调制、气体吸收、二次谐波解调等环节,吸收信号的二次谐波分量携带气体浓度信息,用于计算气体浓度。利用MATLAB对气体检测过程进行了信号仿真,并利用数字锁相放大算法提取了二次谐波信号,验证了二次谐波与气体浓度的关系。通过仿真分析了二次谐波信号随调制系数的变化关系,以便确定较佳的调制参数,为后续系统搭建与气体检测实验提供参考。  相似文献   

11.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

12.
IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…  相似文献   

13.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

14.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

15.
A doping system consisting of NPB and PVK is employed as a composite hole transporting layer (CHTL). By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK : NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK : NPB at 1:3.  相似文献   

16.
An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.  相似文献   

17.
Due to variable symbol length of digital pulse interval modulation(DPIM), it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation(FDPIM) method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.  相似文献   

18.
It is a key problem to accurately calculate beam spots' center of measuring the warp by using a collimated laser. A new method, named double geometrical center method (DGCM), is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device (CCD) is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What's more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.  相似文献   

19.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

20.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

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