亚波长周期结构抗反射介质光栅的衍射特性

用严格耦合波理论(RCWA)计算了当折射率取一系列离散值时的二维亚波长周期结构介质光栅出现一级衍射透射波的周期值,进而利用最小二乘法拟合出临界周期点随折射率的变化规律;利用一维单台阶和多台阶光栅在TE、TM偏振状态以及二维单台阶圆柱状光栅和二维金字塔结构多台阶光栅进行验证,发现它们同样满足临界周期点的变化规律。结果证明,对于任意面形的亚波长周期结构介质光栅的一级衍射效率都有这一规律。     

基于二维激光告警的闪耀光栅设计

现有光栅衍射型激光告警中,正弦光栅存在1级衍射效率较低,闪耀光栅在闪耀波长附近0级和-1级衍射效率很低,这两种光栅的缺点都降低了激光告警的可靠性。为此文中提出了一种改进型闪耀光栅。将两闪耀光栅反相对接,并且中间留一定无光栅空间,此改进可提高波长在闪耀波长附近0级和-1级的衍射效率,将有效克服传统闪耀光栅的漏报警现象。设计加工了闪耀波长为800 nm的改进型闪耀光栅,理论分析了0级和1级衍射效率;采用波长为808 nm和850 nm的光,对改进型闪耀光栅进行二维激光告警实验测试,实验结果表明,在波长为闪耀波长附近光入射时,改进型较普通闪耀光栅的0级和-1级衍射强度有很大提高,能够被CCD有效探测。该改进型闪耀光栅可有效提高二维激光告警系统的可靠性。     

复杂形貌亚波长阵列的周期长度测量研究

设计并建立了一套基于光纤光谱仪的光学测试系 统,将由电子束光刻技术制备的一组 具有手征结构形貌的二维周期阵列结构作为样品,其由扫描电镜(SEM)测量得到的周期长度 分别约为520、570nm。测试并研究了二 维手征周期结构在白光垂直入射条件下光谱随衍射角的变化规律,以及将衍射光学方法用于 复杂形貌的亚波长二维阵列的周期长度测量效果。结果表明,随着衍射角增加,所有样品的 衍射波长均向 长波偏移;在同一衍射角下,样品的衍射波长与其周期结构具有对应关系。利用正交光栅 衍射方程,模 拟了白光在垂直入射条件下的衍射光谱变化,以此推算样品的周期尺寸与SEM测得的数据相 差小于3％,获得了良好的效果,表明了一般正交光栅衍射方程在复杂形 貌结构中的适用性。     

高精度微结构聚合物光栅的复制技术

光栅复制是降低光栅制造成本,提高产量的一条有效途径。研究了利用紫外压印技术复制微结构光栅的方法。使用玻璃基底矩形浮雕结构的微结构光栅作为母光栅,给出了利用聚二甲基硅氧烷(PDMS)制作光栅模具和在光敏聚合物材料上复制微结构光栅的详细过程。经过优化工艺条件,成功地复制了一系列不同周期和开口比的微结构光栅,测试了复制光栅和母光栅的衍射图像和0级与±1级的衍射强度,结果表明,复制光栅和母光栅的衍射图像与光强分布基本一致。     

基于聚合物分散液晶的二维六角晶格变间距光栅的研制

利用柱面波与平面波干涉形成一种二维(2D)全息聚合物分散液晶(H-PDLC)变间距光栅。为了使聚合物与液晶分离得更加彻底,采用曝光强度为16mW/cm2、波长为532nm的激光进行实验,并且两次曝光时间分别为2s和60s,通过将样品二次曝光和旋转60°形成2D六角晶格H-PDLC变间距光栅,分别研究了光栅的理论周期变化范围、衍射特性、电控特性以及影响光栅周期变化的参数分析。结果表明:在半径为6 mm的圆形范围内,光栅的周期变化区间为1.804~2.281μm,与理论计算所得结果基本一致。在没有加载电压的情况下,一级衍射效率达18.3%,当加载电压达到90V时,零级衍射效率由15.6%增加至73%。该光栅具有变周期和电控特性,在衍射光学领域具有潜在的应用价值,可用于染料掺杂2D H-PDLC光栅的可调谐多波长有机激光器的研究。     

矩形光栅局部结构误差对衍射效率的影响

为了提高高光谱遥感技术的分析精度, 利用标量衍射理论, 对矩形光栅局部结构误差的衍射效率进行了分析, 并计算了光栅局部周期和缝宽误差对衍射效率的影响。结果表明, 当加工误差使得光栅局部缝宽变大时, 会造成光栅各主极大(除零级)衍射光强变小, 这一误差对±1级处的衍射光强影响相对较小, 随着误差的增加, 越高的衍射级次其光强下降得越快; 而当加工误差使得光栅局部缝宽变小时, 会造成光栅各主极大(除零级)衍射光强变大, 同样, 当误差变大时, 相对±1级的衍射光受到的影响而言, 级次越高对应的主极大衍射光强增大得越快。该研究对于加工矩形光栅减小局部周期和缝宽误差控制提供了参考。     

长波GaAs QWIP二维周期光栅的耦合效率研究

在量子阱红外探测器(QWIP)上制备光栅的目的是对垂直入射的红外辐射进行有效的耦合.为了研究光栅的光耦合性能,基于模式扩展理论,详细计算长波(14.7 μm)QWIP二维周期矩形光栅的耦合效率.计算结果表明,光栅周期D=4.7 μm,栅孔深度h=1.45μm,d(栅孔)/D=0.707时,光栅的耦合效率达到最大.并且从几何光学的考虑出发,对计算结果进行了验证和分析.还讨论了二维周期光栅衍射光场的分布情况.     

一维金属亚波长周期光栅的衍射特性

利用严格耦合波理论(RCWA)计算了一维金属亚波长光栅刚好出现一级衍射透射波时的周期/波长比(临界周期点),并利用最小二乘法拟合出临界周期点随光栅基底折射率的变化关系,即y=1/x。为了验证该规律的正确性,选取不同的金属材料、占空比、金属厚度、光栅周期、入射光偏振态进行计算分析。结果表明,对于一维亚波长金属光栅,一级衍射的出现都满足临界周期点的变化规律,并且与入射光的偏振态及波长无关,从而为设计一维金属亚波长光栅提供了仅存在零级衍射的条件。     

动态干涉仪的位相光栅衍射效率研究

为了解决普通二维光栅在动态干涉术中光能量利用不足的问题,使用标量衍射理论和傅里叶分析法对矩形正交位相光栅和棋盘型位相光栅的衍射效率进行推导,分别对两种光栅的最佳工作级次选择策略进行研究。分析结果表明,当分光器件为矩形正交位相光栅时,应选择(0, 1)级与(1,0)级作为动态干涉仪的工作级次,光能量利用率达到54.4%;当分光器件为棋盘位相光栅时,应选择(1,1)级作为动态干涉仪的工作级次,光能量利用率达到65%。实验对比了两种光栅在动态干涉仪上的应用效果,当选用(1,1)级作为工作级次时,结果表明使用棋盘型位相光栅的应用效果优于矩形正交位相光栅。因此在动态干涉仪中使用棋盘位相光栅并选用(1,1)级作为工作级次能够消除光能量利用不足对测量造成的影响。     

虚像相位阵列的二维成像原理及其应用

虚像相位阵列（VIPA：virtually-imaged phased array）是一种具有大角度色散的光学器件,利用其大角色散的特性,可以用来制作高分辨率滤波器和色散补偿器。将虚像相位阵列和衍射光栅结合实现二维成像是光谱处理领域的重大进步。从二维成像原理出发,详细介绍其在研制高分辨率和高信噪比的光学滤波器、实现复杂的二维光谱处理以及光谱成像等研究领域的最新应用。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.