红外焦平面阵列非均匀性实时校正研究

针对红外焦平面阵列非均匀性多点校正过程中涉及的数据量大,难于实现实时校正的特点,提出了利用TMS320DM642 DSP硬件对红外焦平面阵列进行多点实时校正.利用DSP的硬件乘法器和加法器能够高速有效地实现红外焦平面阵列的非均匀性校正.实验结果表明利用DSP实现红外焦平面阵列实时非均匀性校正方法简单灵活,图像效果理想,能够很好地满足红外焦平面阵列成像系统实时性能的要求.     

利用DSP实现IRFPA非均匀性校正及其关键技术研究

针对红外焦平面阵列(IRFPA)非均匀性校正过程中运算量大,难于实时实现的特点,提出利用DSP实现红外焦平面阵列非均匀性实时校正方法.在介绍多点校正原理的基础上,详细阐述了DSP硬件实现多点校正的过程及其关键技术,并给出了实验结果.实验表明该硬件校正方法简单灵活,图像效果理想,能够有效地解决红外焦平面阵列非均匀性实时校正难题.     

一种提高红外焦平面阵列成像质量的有效方法

为了提高红外焦平面阵列的成像质量,提出一种对红外焦平面阵列的非均匀性校正的同时进行图像增强处理的方法(简称校正增强法),该方法通过对红外焦平面阵列的校正来减少各阵列元响应的非均匀性,通过对红外图像进行增强处理来提高整幅图像的对比度,从而有效地提高红外成像系统的成像质量.实验结果表明:经过校正增强方法处理后的红外图像清晰、视觉效果理想.     

基于FPGA的红外焦平面实时图像处理系统

针对红外焦平面阵列(IRFPA)实时图像处理系统中的重要环节——IRFPA的非均匀性校正和红外图像的增强,提出了以FPGA为核心的红外焦平面成像实时处理系统。该系统能够实时完成校正系数的计算、IRFPA非均匀性校正、红外图像的增强及视频合成等功能。在FPGA中采用了并行处理结构和流水线技术,使系统的处理速度高达50M×12 bit/s,特别适用于大面阵、高帧频IRFPA实时图像处理。仅用一片FPGA完成所有的处理功能,使整个系统结构简单、体积小、功耗小,便于小型化。     

基于高性能DSP的红外焦平面阵列非均匀性实时校正

基于离散小波变换(DWT)理论,提出了一种基于场景的红外焦平面阵列(IRFPA)非均匀性实时校正算法;针对算法所涉及的运算量和数据量庞大的特点,设计了实时非均匀性校正的红外图像处理系统,系统是以高性能DSP(TMS320C6713)为核心器件,采用DSP不同的传输通道并行传输数据,并充分利用DSP硬件的并行性和流水线操作进行非均匀性校正;以真实的红外图像序列为例,进行了非均匀性校正的仿真实验,结果表明,基于高性能DSP的非均匀性实时校正系统完全可以达到实时校正的要求,所用算法对慢变化量具有较好的自适应性。     

基于DSP的红外焦平面阵列非均匀性校正技术

红外焦平面成像系统是红外成像技术发展的趋势，焦平面阵列的非均匀性校正技术是一项正在探索的关键技术。在分析了红外成像系统非均匀性的产生机理及表现特征的基础上，介绍了红外焦平面阵列非均匀性校正的基本方法；基于TMS320C62x DSP为核心的系统硬件平台，采用两点多段的方法，完成了红外图像非均匀性的实时校正；最后给出了实验结果，验证了本系统能够满足红外焦平面成像系统的要求，具有实时性好、实用性强的特点。     

红外探测器非均匀性校正系统研制

分析了红外焦平面阵列（IRFPA）基于定标的非均匀性校正算法和基于场景的非均匀性校正算法的优势和不足。针对红外焦平面阵列二元非线性的非均匀性理论模型这一特点,提出了一种基于S曲线拟合的校正算法。利用FLIR公司的长波非制冷红外探测器进行信号采集,建立了焦平面探测元的响应模型。描述了基于FLIR长波非制冷红外探测器在FPGA平台的处理流程,并实现了S曲线校正算法,提高了红外图像的质量。实验表明,经过S曲线拟合校正处理,减弱了红外图像的条纹噪声,使IRFPA组件的非均匀性从6.45%降低至2.06%。     

红外焦平面条带状非均匀性校正硬件实现方法

红外焦平面阵列条带状非均匀性严重影响了其成像质量,大大限制了它的应用。实现了一种基于FPGA的红外焦平面阵列条带状非均匀性实时校正系统,该系统以中值红外均衡算法为核心,针对算法以及FPGA的特性进行了优化,单帧内可进行条带状非均匀性的校正,硬件仿真结果表明:处理效果显著。系统处理速度快、资源占用量小,可以作为一个独立模块嵌入到红外焦平面成像与处理系统中,实现条带状非均匀性的实时校正,有很高的实用性与可扩展性。     

利用CPLD实现红外焦平面阵列实时非均匀性校正

红外焦平面阵列响应的非均匀性严重限制了红外系统的成像质量,必须在使用时对其进行非均匀性校正.以两点校正方法为例,利用CPLD的高速性和灵活的可编程性,对红外焦平面阵列进行实时非均匀性校正.实验结果表明利用CPLD实现的红外焦平面阵列的非均匀性校正方法简单、效果理想.     

红外图像非均匀性产生原因分析

在论述实际红外焦平面热像仪成像基础上，对焦平面热像仪红外图像的非均匀性产生机理进行了理论探索，并在理论分析指导下从测量和校正角度对各种非均匀性产生因素进行了归类，以期获得红外图像非均匀性校正的方法与减小图像非均匀性产生的技术措施。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.