低成本的MCM技术

本文全面地介绍了为降低ＭＣＭ成本，国际上开发出的最新工艺及材料，包括ＭＣＭ－Ｆ、ＭＣＭ－Ｅ／Ｆ、ＭＣＭ－Ｌ／Ｏ、ＬＴＣＣ－Ｍ、ＩＢＳＳ、ＬＡＰ、ＬＣＰ、ＦＣＡＰ等。指出研究的出发点是以ＭＣＭ－Ｌ的成本而获得ＭＣＭ－Ｄ的性能。而ＭＣＭ－Ｄ成本构成中最贵的是薄膜层的加工，因此设法用其他方法取代传统的薄膜加工就成了焦点所在。大量的工作是围绕着改善迭层材料及工艺而改善ＭＣＭ－Ｌ的性能进行的。ＬＡＰ是ＭＣＭ     

曝光技术

曝光技术（夏普）关敦夫矢野耕三１前言曝光技术在大规模集成电路（ＬＳＩ）工艺中对提高集成度起到了关键作用。今天作为生产有源矩阵液晶显示器（ＡＭ－ＬＣＤ）的曝光技术又迎来了它的飞跃时期。用于ＡＭ－ＬＣＤ批量生产的初期的曝光装置，大部分都沿用ＬＳＩ的工艺设...     

MCM－C的设计和制造

介绍了ＭＣＭ－Ｃ的ＣＡＤ设计方法，以及ＭＣＭ－Ｃ基板的制作与金属化、芯片的测试和老化、芯片互连等工艺。     

MCM—C的设计和制造

介绍了ＭＣＭ－Ｃ的ＣＡＤ设计方法，以及ＭＣＭ－Ｃ基板的制作与金属化，芯片的测试和老化，芯片互连等工艺。     

厚膜材料和技术的发展及在MCM—C中的应用

为增强和扩展ＭＣＭ－Ｃ技术的能力，近年来已有许多种新型的厚膜材料和厚膜加工工艺被研究开发成功。充分体现这些材料，新工艺特点的各种高密度电路－－ＭＣＭ－Ｃ已经开始从研究阶段走向大批量生产阶段。本文重点介绍了厚膜材料和技术的最新发展动态及其在ＭＣＭ－Ｃ中的应用。讨论了其发展趋势。     

二维电子倍增器及其新发展

概述了二维电子倍增器ＲＬＳＧ－ＭＣＰ的发展的概况和工艺和局限性,提出了用半导体工艺制作ＡＴ－ＭＣＰ的技术途径,阐述了ＡＴ－ＭＣＰ的优点;介绍了新型ＭＳＰ电子倍增器的原理和特点,最后展望了电子倍增器的发展前景。     

TD—CDMA系统分析

ＴＤ－ＣＤＭＡ是西门子公司等针对第三代移动通信系统ＩＭＴ－２０００提出的一个解决方案，文章首先介绍了第三代移动通信系统，并指出ＧＳＭ为ＴＤ－ＣＤＭＡ构筑子坚实的基础，然后分析了ＴＤ－ＣＤＭＡ系统的技术特点和与ＧＳＭ９００，ＤＣＳ１８００的兼容性，另外对ＴＤ－ＣＤＭＡ提供综合业务的能力了作了说明。     

2AlZn6Mg合金的火焰钎焊

介绍了２ＡｌＺｎ６Ｍｇ合金的手工火焰钎焊工艺。提出采用Ａｌ－Ｓｒ－Ｓｒ－Ｌａ和Ａｌ－Ｓｉ－Ｃｕ钎料配用２０１钎剂。严格掌握钎烛温度和控制钎焊时间，钎焊的２ＡｌＺｎ６Ｍｇ产品质量较好，完全符合需求。这一工艺已在我厂应用。     

JM－2型背照式PIN光电探测器对位显微监视系统

文章介绍了ＪＭ－２型背照式ＰＩＮ光电探测器对位显微监视系统（以下简称ＪＭ－２型对位系统）的工作原理，以及在烧结工艺上的应用和实验结果，其工艺精度可达０．０５ｍｍ     

一种低压智能功率集成技术

本文介绍了一种以传统多晶硅栅ＶＤＭＯＳ工艺为主的新型自隔离智能功率集成工艺技术。该技术可以将ＶＤＭＯＳ、ＨＶ－ＣＭＯＳ、ＬＶ－ＣＭＯＳ、ｎｐｎ双极晶体管、齐纳二极管、电容等器件集成在同一单片电路中。整个工艺仅１０块掩模版。结合我们研制的高边智能功率开关电路，对器件结构、特性和工艺设计考虑进行了详细的分析。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.