高能量LD泵浦Nd∶YAG板条激光器

为了获得高能量532 nm激光输出,利用电光调Q晶体LN,通过调Q同步驱动技术和LD侧面泵浦板条技术,获得高能量窄脉宽1.06 μm激光输出,泵浦非线性晶体KTP进行频率变换,实现高能量532 nm激光输出。在电源输入电流120 A、调Q驱动频率10 Hz的条件下,获得264 mJ的1.06 μm激光。利用该1.06 μm激光泵浦KTP获得最高能量为185 mJ的532 nm 绿光激光输出,1.06 μm到532 nm的转化效率为70%。实验结果表明:通过电光调Q技术和LD侧面泵浦技术,可以实现高能量窄脉宽1.06 μm激光输出,泵浦KTP可获得高能量绿光激光输出。     

LD泵浦双棒Nd:GdVO4激光器

为了获得可对红外成像探测器具有干扰效果的高功率、高重复频率3.8μm中红外激光,首先通过LD侧面泵浦双棒技术和高重复频率声光调Q技术,获得高功率高重复频率1.06μm激光,再将其作为泵浦光进行非线性差频试验,获得3.8μm激光输出。将输出的3.8μm中红外激光用于红外探测器的干扰试验,获得了较好的干扰效果。     

脉冲LD泵浦千赫兹1.57 μm全固态激光器

采用非稳腔光参量振荡（OPO）研制了千赫兹重复频率人眼安全波段全固态激光器。激光器采用电光调Q方式、脉冲激光二极管（LD）侧面泵浦Nd:YAG激光晶体实现了高光束质量的1.064m基频激光。光参量振荡部分采用Ⅱ类非临界相位匹配KTP晶体,为了获得较好的光束质量,OPO谐振腔采用平凸非稳定谐振腔结构,实现了千赫兹重频、窄脉冲1.57m波段激光输出。在脉冲激光二极管泵浦电流为125 A、电光调Q重复频率为1 kHz时,1.57m激光输出最大平均功率达到了4.67 W,激光脉冲宽度为4.3 ns,功率不稳定度为3%,激光泵浦阈值约为45 A。     

LD泵浦双棒Nd∶GdVO4激光器

为了获得可对红外成像探测器具有干扰效果的高功率、高重复频率3.8 μm中红外激光,首先通过LD侧面泵浦双棒技术和高重复频率声光调Q技术,获得高功率高重复频率1.06 μm激光,再将其作为泵浦光进行非线性差频试验,获得3.8 μm激光输出.将输出的3.8 μm中红外激光用于红外探测器的干扰试验,获得了较好的干扰效果.     

机载远程探测用高能量双波长激光器研究

激光器是机载远程光电探测系统的重要组成部分,其性能直接决定系统应用效果.首先从激光测距方程出发,分析不同探测体制以及双波长探测需求;然后针对半导体泵浦固体激光器进行研究,并对不同双波长实现方式进行了分析;最后通过试验验证,实现了高能量双波长激光输出.试验结果表明:通过主动电光调Q技术和LD侧面泵浦共腔谐振技术,可以实现高重频窄脉宽1.064μm和1.57μm双波长激光输出.     

双支路电光Q开关高重频激光器研究

报道了一种采用LD侧面泵浦、双支路电光Q开关实现热退偏补偿的高重频固体激光器。在重复频率1 kHz时,实现了平均功率6.7 W,脉冲宽度16.7 ns的TEM00模激光输出,对千赫兹高重频、窄脉宽、高光束质量激光器的研发具有一定的参考价值。     

高重频人眼安全光参变振荡器实验研究

介绍了连续激光二极管抽运声光Q开关Nd:YAG激光器抽运的高重复频率1.57μm人眼安全光参变振荡器实验研究结果.采用连续激光二极管三侧面抽运Nd:YAG模块和QSGSU-6型小型声光Q开关,1.57μm光参变振荡谐振腔置于1.06μm Nd:YAG激光谐振腔内,非线性晶体为X切割的KTP晶体,利用Ⅱ类非临界相位匹配光参变振荡输出1.57μm波长激光.在重频1kHz~5 kHz时进行了初步实验,在重频3kHz时,获得1.57μm高重复频率激光最大输出功率480mW,最大峰值功率58.8kW,脉宽2.72ns,电光效率达2.6‰.试验结果表明,连续激光二极管抽运声光Q开关内腔光参变振荡器是获得高频人眼安全激光的一种有效途径.     

光纤激光器泵浦光参量振荡器

为了获得小体积高功率3~5μm中红外激光输出,通过高重复频率驱动调Q技术和种子注入光放大技术,获得高功率高光束质量1.06μm光纤激光输出,外置起偏器获得两束激光输出,利用波片偏振旋光原理,实现两束偏振态一致的激光输出,泵浦非线性晶体PPLN进行频率变换,实现高功率3~5μm中红外激光输出。在电源输入电流60 A,调Q驱动频率50 kHz的条件下,获得最高功率6.2W的3.8μm中红外激光,1.06μm到3.8μm转化效率为16%。实验结果表明:通过光纤激光器泵浦光参量振荡器,可获得高功率3.8μm中红外激光输出。     

适于空间应用的高重复频率窄脉冲电光调Q激光器

给出了一种适用于空间应用的全固态高重复频率窄脉冲激光器。激光器采用超稳双porro棱镜直线谐振腔,以LD侧面抽运Nd…YAG板条,磷酸氧钛铷(RTP)晶体作为电光调Q开关,并利用偏振耦合输出激光。实现了激光脉冲重复频率为1kHz、平均功率为1.15W、脉冲宽度为1.3ns、光束质量因子M~2为M_x~2=1.20和M_y~2=1.23、波长为1064nm的脉冲激光输出。激光器结构紧凑,性能良好,可作为未来新型空间探测激光雷达系统的光源。     

23.6W高效率2 μm激光器

报道了一台高重复频率高效率2μm激光器.理论计算了1.064μm激光抽运Ⅱ类相位匹配KTP晶体的角度调谐曲线,得出KTP晶体按φ=0°,θ=54°切割可获得近简并波长的2μm激光输出.使用1.064μm Nd∶YAG模块作为抽运源,抽运内腔式双晶体走离补偿双谐振光参量振荡器(DROPO),在7 kHz声光调Q频率下,获得23.6 W的2.12μm激光输出,808 nm激光二极管(LD)出光获得2μm激光的斜率效率超过19%.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.