一种自适应小区CoMP协作节点选择算法

为了进一步提高小区边缘用户的性能要求,文章通过对现有的CoMP传输系统的协作节点选择算法进行改进,基于信号质量和负载信息提出了一种自适应小区CoMP协作节点选择算法,该算法能够在现有的算法上有效提高小区服务性能,改善小区通信服务质量。     

一种白适应小区CoMP协作节点选择算法

为了进一步提高小区边缘用户的性能要求,文章通过对现有的CoMP传输系统的协作节点选择算法进行改进,基于信号质量和负载信息提出了一种自适应小区CoMP协作节点选择算法,该算法能够在现有的算法上有效提高小区服务性能,改善小区通信服务质量。     

一种下行LTE CoMP双门限用户划分方法

协作多点传输(CoMP)作为一种在LTE-Advanced中的关键技术,用来消除小区间干扰,显著提高用户吞吐量。但是在传统单门限协作用户划分中,信道状态的变化引起用户在传输模式上的频繁切换,产生过度系统回程。提出了一种新型双门限用户划分方法,用户能够根据判定门限的调整保持相对稳定的传输状态。仿真结果表明,该方法在提高用户吞吐量的同时能达到系统性能和回程开销的良好平衡。     

HetNet场景下基于时延的多基站协作传输方法

小基站的部署有效提高了无线网络的覆盖范围和系统容量,多点协作传输(CoMP)技术被认为是一种减少基站间干扰的有效策略。提出了一种用于HetNet场景下基于时延的多基站协作传输方法。首先,利用各协作基站传输信号到用户之间的时延差,据此计算时延补偿因子,在基站端发送信号时进行频域上的相位旋转,实现时延补偿;其次,依据基站间回程时延,选择合适的协作基站,实现基站协作同步,并减少回程时延,降低时延对协作传输的影响。最后,在matlab平台下对该方案进行仿真验证,相比传统方案该方案可降低干扰,提升边缘用户吞吐量和系统整体的吞吐量。     

LTE-A上行CoMP软信息合并接收算法

为了提高边缘用户的吞吐量和服务质量,LTE-A系统引入了协作多点传输(coordinated multi-point transmission,CoMP)技术.针对LTE-A上行CoMP联合处理技术,在原始数据合并和硬判决动态选择算法的基础上,提出了一种软信息合并接收算法.理论分析和系统级仿真证明,其结合了两种传统算法各自的优点,吞吐量增益介于两种传统算法之间,极大地降低了X2链路负载,且充分利用了各个eNode B的基带处理能力,提高了网络的健壮性和容错性.     

HetNet中基于上行CoMP的动态多小区接入算法

提出了HetNet中基于上行CoMP的动态多小区接入算法(UCDS),动态选择协作基站,利用CoMP机制,改善小区边缘用户的上行传输性能。进一步地,提出了基于二次判决的协作小区选择算法(DJCS),以减少参与协作的基站数,降低协作复杂度并节省基站端资源。仿真结果表明,UCDS算法能显著提高边缘用户的平均吞吐率和传输能效,而DJCS算法在保证用户性能的情况下,降低了基站端的能耗。     

基于跨层优化的机会频谱接入算

针对周期性信道感知机会频谱接入系统,首先采用马尔可夫过程对次用户的感知活动进行建模分析,然后结合物理层和MAC层参数提出一个跨层性能指标--有效传输容量,并在最大化有效传输容量准则下提出一种跨层优化机会频谱接入算法,进而分析了机会频谱共享系统可获得的平均有效传输容量.理论分析和仿真结果表明,所提出的跨层优化接入算法性能优于单层优化接入算法,它可以使次用户获得更高的有效传输容量.     

OFDM中继系统的中继子载波对选择和功率分配

中继传输能够有效地提高系统功率效率以及传输容量。该文研究宽带OFDM中继系统的最优中继子载波对选择和功率分配。首先分别针对再生中继和非再生中继两种模式,提出中继子载波对的等效信道增益;然后利用匈牙利算法进行中继子载波对选择;最后在选择出的中继子载波对上利用注水法进行功率分配,从而达到最大化传输容量的目的。仿真结果表明,相对于随机中继子载波选择以及平均功率分配,该文算法与其它几种方法相比中继系统容量有较大提高。     

LTE-Advanced中协作多点传输技术研究

为了提高小区边缘用户的性能,满足小区边缘频谱效率的要求,LTE-Advanced系统中引入了协作多点传输技术CoMP（Coordinated Multi-Point）。CoMP技术是一种干扰消除技术,通过小区间的联合调度和协作传输,使小区边缘的CoMP用户的干扰信号变为有用信号,或降低来自邻小区的干扰水平,从而提高小区边缘吞吐量,并且增强系统性能。文章主要介绍了协作多点传输技术及其原理,对CoMP技术中的协作簇选择、CoMP用户划分、用户传输方案及预编码做出了介绍,通过仿真对比得到采用CoMP技术的系统性能增益,最后对协作多点传输技术作出了展望。     

LTE-A中基于CoMP的预编码算法

在LTE-A系统中引入了多点协作（CoMP）技术,它能够有效降低小区间干扰,提升系统吞吐量,它可以看做是一个协作的多用户MIMO系统,但是每个用户会同时接收到有用信息和来自其他用户的干扰。而采用预编码方案可以有效消除MIMO用户之间的干扰。本文重点研究了基于CoMP技术所使用的经典预编码算法,并在此基础上,提出了结合SLNR和SVD两种算法优势的改进算法,该算法可以同时消除用户间以及用户内的多天线干扰,使系统容量进一步提升。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.