单片机外中断的扩展及其多优先级软件实现方法

针对MCS 51系列单片机只有2个外中断和2个中断优先级的问题,介绍了外中断的3种扩展方法,同时给出了每种扩展下利用软件对中断优先级进行扩展的程序,该方法可用于需要多个外中断、多级中断嵌套的应用系统。     

实时CORBA优先级波段划分的研究及算法实现

实时CORBA是通用CORBA的一个扩展,首先对实时CORBA系统的传输机制进行了一定的分析并给出了相关的仿真试验,在此基础之上提出了计算实时CORBA系统所需波段数的试探性算法,以及基于负载平衡的波段优先级范围划分算法,并进一步提出了改进的加权算法.测试结果表明算法能在兼顾到周期和优先级因素的基础上,对实时CORBA系统的优先级波段连接进行合理的优先级划分.     

软件测试需求的开发与管理

测试需求开发是软件测试的关键活动，测试需求管理是测试质量保证的重要手段。给出了获取完整和正确测试需求的方法，提出使用扩展的UML用例来对测试需求进行规格化描述技术，通过对测试需求的风险分析来确定测试的优先级，并根据测试优先级来确定测试的类型和深度。同时，为适应软件需求的变更，给出了需求追踪矩阵和配置管理相结合的解决方案,提出了基于需求追踪矩阵对需求变更程度和测试覆盖情况进行度量的方法。     

利用编码器对单片机中断功能的扩展

以74LS148为例,结合Proteus仿真软件实例提出了利用优先编码器的优先级扩展输出端（GS）与51系列单片机外中断端口（INT0或INT1）相连,用8个开关（SW1-SW8）来仿真控制编码器8个输入端口（I0—I7）的高低电平的输入,从而实现对外中断扩展的方法,并给出了参考程序。结合程序观察仿真现象,可以清楚的看到编码器已从硬件电路上实现了对中断源优先级的高低排序,以及实现了外中断的嵌套。     

EPON支持QoS的动态带宽算法研究

本文给出了一种支持多优先级业务的带宽分配算法。其中高优先级业务固定带宽分配和低优先级业务动态带宽分配，将上行帧分为第一时隙和第二时隙两部分，各ONU高优先级业务在上行第一时隙发送，第二时隙用于低优先级业务，同时采用固定周期的带宽分配方案，因此降低了高优先级业务的时延和时延抖动。通过ONU实行内部调度并且参与上行接入计算，避免了上行复杂的同步问题，提高了链路利用率。     

基于802.11e的无线多跳自适应合作式QoS算法

 为解决Ad hoc网络中转发节点拥塞和低优先级业务增多而影响高优先级业务带宽的问题,提出了一种无线多跳网络服务质量保证框架WMHQ(Wireless Multiple Hop QoS)和自适应合作式信道接入算法QAC-EDCA(QoS guaranteed Adaptive Cooperation EDCA).算法将802.11e的优先级区分机制扩展成了三层优先级机制,通过将业务的服务质量需求映射成时隙利用率进行周期性的监测,并以控制帧捎带的方式在两跳范围内传播竞争窗口调整信息,使得高优先级业务具备剥夺低优先级业务带宽的能力和拥塞节点具有协调获取更多带宽的能力.仿真表明,该算法相对802.11e能更好地保护多跳情况下高优先级业务的服务质量.     

IEEE802.11e中DCF的优先级机制

正在制定过程中的IEEE802.11e标准是802.11WLAN标准的扩展,用以提供所要求的Qos。该文重点阐述了在802.11e中EDCF的优先级机制,并通过仿真数据对优先级机制的性能进行评价。     

用于开放式系统的二维优先级实时调度

提出了一种新的用于开放式系统的调度机制,即二维优先级实时调度,它不仅划分任务优先级,还划分调度策略优先级.任务的执行顺序由其调度策略优先级和任务优先级共同决定.它不仅可以解决传统优先级调度机制中机制与调度策略不能相分离的问题,还提高了效率.这种机制中引入的CPU带宽控制策略,可以根据需要实现硬实时、软实时、混合实时不同目标的实时系统,并简化了任务可调度性分析,且可以为不同权限或级别的用户提供不同QoS服务.这种调度架构不仅效率高,而且具有很强的开放性,适用广、易扩展.     

ATM-PON的MAC协议研究

根据 G.983对 APON帧格式的定义 ,并参考其他接入网的 MAC协议 ,提出了一种体现业务优先级的 MAC协议 ,给出了授权分配情况 ,分析了协议的健壮性 ,并针对网络不过载和过载两种情况给出了计算机模拟的结果     

Ad Hoc中基于效用最大的优先级流控机制

针对AdHoc中流竞争,提出了一种分布式节点的最优化速率控制机制。给出了基于流优先级的效用函数。以最大化网络整体效用为目标,通过运用对偶理论和梯度投影算法,给出了每一端到端流获得最优值的迭代机制,它能够保证高优先级流的QoS。仿真结果表明该机制可以使网络资源根据流优先级进行有效分配,并且具有很好的收敛性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.