基于TDC的无死区频率测量技术研究

在精密时频测控领域中,高分辨率、无死区的时间间隔和频率测量非常关键,而时间数字转换器(Timeto Digital Converter,TDC)是时间频率测量的常用手段.该文研制了基于ACAM公司生产的时间数字转换芯片TDC-GP21和Altera公司FPGA芯片EP4CE6E22C8N的时间频率测量设备,实现了高分辨率的时间间隔测量,测量分辨率达到13ps.同时采用时间间隔测量模块两两组合的方式实现了无死区频率测量,创新性地采用每组3个TDC芯片,共4组搭建了时间频率测量系统,并对组内3个TDC芯片测量结果采用平均值滤波法,使频率测量稳定度达到1.1×10-11@5.6×10-15@10000 s,与商用K+K FXE频率计数器指标相当.本设备具有体积小、无需校准、成本低等优点,能够广泛应用到高精度时间间隔和精密频率测量领域中.     

面向SNSPD系统的可拓展时间抖动测量模块

针对超导纳米线单光子探测器(SNSPD)应用需求的多样化,设计了一款面向SNSPD的可拓展时间抖动测量模块。基于对SNSPD系统时间抖动测量原理的分析,设计了数字化单元、时间数字转换(TDC)单元和现场可编程门阵列(FPGA)单元,实现对SNSPD输出信号的数字化、时间信息测量以及数据读取。对该模块TDC单元的分辨率、线性度和时间精度分别标定,测试结果表明TDC单元的分辨率好于55ps,测量数据呈线性,100ns以内时间精度低于36ps。通过结合实用化SNSPD系统,实现了100ps左右的时间抖动表征,并与商用时间相关单光子计数(TCSPC)模块进行对比,验证了该模块对于SNSPD系统时间抖动测量的可行性。     

基于FPGA的时间间隔测量系统的设计

为了解决电容充放电放大电路测量时间间隔的不稳定,采用复杂可编程芯片FPGA设计实现精密时间间隔的测量。FPGA的锁相环（PLL）电路得到高频时钟,时钟管理器（DCM）实现高速时钟移相,内插时钟得到高精度时间测量。通过在光电回波脉冲时间间隔测量系统中验证,该设计可以得到200ps的时间间隔测量精度。采用FPGA芯片设计的数字化测量系统,具有集成度高,性能稳定,抗干扰强,设计方便等优点,能广泛应用于科研和生产中     

基于TDC的自动驾驶激光雷达测距方法研究

在应用于自动驾驶的相位调制连续波（PhMCW）激光雷达测距系统中,测量中频（IF）信号的脉冲宽度是关键问题,时间数字转换器（TDC）模块对IF信号的测量决定了PhMCW激光雷达的测距范围与精度。然而传统的TDC实现方法测量范围很小,且实现大测量范围时系统复杂度高,难以应用于自动驾驶。为了实现高精度大范围的TDC模块,采用基于现场可编程门阵列（FPGA）的严格计数链法,在保证比较高的测量精度的前提下,增加很少的资源使用量就可以扩大测量范围,设计简单。该TDC模块能够实现1.24μs的时间测量范围,对应最大探测距离为186 m。利用信号源产生不同脉宽的被测信号进行实际测试,获得了最佳为26.42 ps的测量精度,对应测距精度为3.96 mm,优于现有商用激光雷达50 mm的测距精度。对200 ns脉宽的过采样数据包进行了频谱分析,证明了TDC测试结果受开关电源噪声影响。最后,搭建PhMCW激光雷达系统进行应用验证,实现了0.3～7 m飞行时间探测,从而证明了该TDC测量方法的可行性。该方法在激光雷达测距领域具有广阔的应用前景。     

一种带有亚稳态消除电路的TDC设计方案

时间间隔测量技术在原子物理、激光测距、定位定时等方面有着重要的应用,因此,高精度的时间数字转换电路(Time-to-Digital Converter,TDC)在科学研究和工程实践中扮演着重要的角色;但是TDC在进行时间间隔测量量化时往往受到亚稳态制约,影响了TDC的分辨率、线性度,甚至会出现错误的输出结果。本文通过加入相位判断逻辑,可以完全消除TDC量化时间间隔时遇到的亚稳态问题。本文提出的TDC设计方案,工作频率512MHz,测量精度250ps,测量范围1μs,功耗400μW。     

脉冲激光测距中高速精密时间间隔测量研究

在脉冲激光测距系统中,设计实现了基于FPGA和TDC-GP21的高速精密时间间隔测量系统。采用TDC-GP21的高精度测量模式,配置TDC-GP21完成了时间间隔测量,通过校准测量对测量结果进行补偿修正,提高了系统的测量精度;设计了多级嵌套状态机实现高速SPI通信,减小了系统单次测量周期;分析了影响测量精度的因素,比较分析了3种时刻鉴别方法的漂移误差,设计了高通阻容时刻鉴别模块,减小了系统的非线性误差。实验分别进行了基于FPGA脉冲信号的时间间隔测量和激光测距试验,对比验证了系统的测量误差,分析了系统在测量区间的线性度。实验结果表明,系统可以实现高速稳定测量,线性度良好,重复测量频率达1kHz,测量精度在±100ps内。     

基于TDC7201芯片的高精度激光脉冲飞行时间测量模块研究

设计了一种高精度、高线性度、轻小型激光脉冲飞行时间测量模块。结合TDC7201芯片在时间测量方面的优势,将其作为时间测量核心部分,并将STM32F103RET6微控制器作为主控芯片来控制整个模块的工作。实验结果表明,该模块在12 ns~100 μs时间间隔范围内的时间测量精度最高可达4.1 ps;测量结果的线性拟合相关系数为1,且能够测量激光脉冲主波与5个回波之间的时间间隔。该模块可满足基于硅光电倍增管(Silicon Photomultiplier, SiPM)的脉冲式激光测距系统的高精度、高线性度、多回波、轻量化等实际应用需求。     

TDC—GP21在时差法超声波流量计中的应用

为了使超声波流量计的精度范围能达到±0．5％,研究了时差法超声波的测量原理,分析了实现高精度测量的设计方法。介绍了系统的工作过程和硬件组成,详细阐述了测时芯片高速时间数字转换器TDC—GP21（Time-to—DigitalConverter）的结构和功能原理,以及其在超声波流量计时间测量模块中系统硬件部分的实现。采用TDC—GP21,ARM微处理器、超声波收发电路等硬件架构,实现了高精度测量超声波顺流和逆流传播时间差。实验结果和精度分析表明,研制的超声波流量计符合设计要求,并为超声波流量计的高精度和低功耗设计提供了一个参考。     

基于FPGA的时间间隔测量模块设计

介绍一种基于FPGA技术的时间间隔测量方法,通过分析FPGA的主要技术优势及其在工业控制领域中所处的重要地位,给出设计时问间隔测量模块所选用的FPGA器件并进行硬件设计,以及所选用的软件并进行软件设计.描述时间间隔测量模块的软件及硬件设计方法,给出设计过程的硬件原理图及软件流程图,并对设计的各功能模块进行功能时序仿真.     

32通道高精度时间数字转换电路设计

介绍了一种在FPGA中基于Wave Union技术而实现的32通道高精度时间数字转换器(time-to-digital convertor,TDC)电路.利用加法器进位链的进位延迟,输入击中前沿产生wave union送到进位链-寄存器阵列结构中做多次测量,有效地细分了进位链中的超宽码(ultra-wide bins),提高了时间间隔测量精度.经过初步的时序仿真和硬件测试,验证结果表明该TDC电路基本满足设计要求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.