掺杂与非掺杂相结合制备有机发光器件

采用掺杂和非掺杂方法制备了一种多层白色有机电致发光器件.DPVBi为蓝光发光层,将红光[Ir(piq)2(acac)]磷光掺杂染料掺入到母体BAlq中作为红光发光层,荧光材料QAD以亚单层的方式插入Alq3中作为绿光发光层,通过改变亚单层的厚度,得到了高效率的有机发光器件,此器件的最大电流效率可达6.1 cd/A,最大功率效率达3.1 lm/W,最大亮度达25 300 cd/m2,当电压从4V变化到14V时,色坐标从(0.45,0.55)变化到(0.47,0.37),处于黄白光区.此器件的特点在于器件的性能可以通过简单地调整QAD的厚度进行控制,避免了使用多掺杂层工艺的复杂性.     

基于Ir(ppy)2acac的掺杂浓度对 OLED器件发光性能影响研究

制备了结构为:ITO/MoO3(40nm)/NPB(40nm)/TCTA(10nm)/CBP:Ir(ppy)2acac(x%)(30nm)/BCP(10nm)/Alq3(40nm)/LiF(1nm)/Al(100nm)的器件,Ir(ppy)2acac为绿色磷光染料,x分别为4%、6%、8%、10%。通过调节绿色磷光染料的掺杂浓度,对器件的发光性能进行了研究,发现在掺杂浓度为8%,亮度为490cd/m2,器件获得最高电流效率为69.43cd/A,相比4%的器件高出27.5%。分析原因是掺杂浓度越高,载流子在绿色染料上复合的几率越高;CBP与Ir(ppy)2acac的LUMO能级均为2.5eV,注入主体CBP上的电子可以直接传递给掺杂染料,避免电子对掺杂染料传递过程中的能量损失;较高的掺杂浓度更有利于载流子的传输。然而,较高的掺杂浓度会引起三线态激子的猝灭效应。另外,由于TCTA、BCP为载流子阻挡材料,具有较高的三线态能量,可以将载流子和激子限制在发光层内。     

高效率磷光与荧光相结合的白色有机发光器件

制作了一种白色有机电致发光器件(WOLED)。将红光[Ir(piq)2(acac)]及绿光[Ir(ppy)3]磷光掺杂染料分别掺入到母体CBP中,在2种磷光发光层间插入蓝光材料DPVBi,引入电子传输能力强的BPhen作为电子注入层和空穴阻挡层,通过改变蓝光发光层的厚度,得到了高效率的WOLED,最大电流效率可达17.6cd/A,最大功率效率达13.7lm/W,最大亮度达27525cd/m2,当电压从4V变化到12V时,色坐标从(0.54,0.35)变化到(0.30,0.31),基本处于白光区。器件的特点在于DPVBi的存在阻挡了2种磷光材料间的能量转移,色度可以通过简单地调整DPVBi的厚度,避免使用稀有的蓝光磷光材料和与其相匹配的母体材料,同时又可以保持较高的发光效率。     

基于薄层铱配合物的有机电致发光器件研究

采用蓝色磷光染料bis[(4,6-diflourophenyl)-pyridinato-N,C2’)](picolinato) Iridium (III)(FI rpic)和黄色磷光染料bis[2-(4-tertbutylphenyl) benzothiazolato-N,C2,]iridium(acetylacetonate)[(t-bt)2 Ir(acac)]为超薄层,制备了结构为ITO/NPB/mCP/(t-bt)2Ir (acac)/mCP/Flrpic/mCP/TPBi/Mg:Ag的白色有机电致发光器件.通过调节磷光染料双超薄层Flrpic和(t-bt)2Ir(acac)的厚度,优化了白光器件的性能.结果表明,白光器件的最高电流效率为13.08 cd/A,最高功率效率为7.21 lm/W,发光光谱稳定,在9V时得到色坐标为(0.33,o.33)的标准白光,并且在较宽的电压范围内仅有(±0.08,±0.08)变化.这是由于超薄层FIrpic和(t-bt)2Ir(acac)形成的陷阱效应直接俘获电子和空穴,从而将载流子复合区域限制在一定范围内,不仅有利于增加激子的辐射发光效率,且提高了光谱的稳定性.     

具有不同掺杂层厚度的荧光与磷光材料相结合的高效白色有机发光器件

实验制作一种多层白色有机发光器件(WOLED)。将 绿光磷光材料和红光磷光材料 Ir(piq)₂(acac)共掺到母体BPhen中作为绿光和红光发光层;荧光材料DPVBi作为蓝光发 光层,通过改变掺杂层的厚度,得到了高效率的白色WOLED。器件的最大电流效 率可达4.55cd/ A,14 V时亮度达8489cd/m² ;当电压从4V变化到12 V时,色坐标从(0.52,0.34)变化到(0.34, 0.26),基本处于白光区。此器件的 特点,在于其性能可以通过简单地调整掺杂层的厚度来控制。     

高效率白色有机电致发光器件

通过引入磷光材料Ir(pPy3)作为敏化剂,制作了高效率的白色有机电致发光器件.Ir(pPy)3和荧光染料DCJTB共掺入CBP母体中.此共掺层的厚度以及浓度都影响到整个器件的效率和颜色.Alq和BCP分别用作电子传输层和激子阻挡层,NPB用作蓝光发光层和空穴传输层.器件的最大效率和亮度分别可以达到9 cd/A和12 020 cd/m2.通过调节掺杂层的厚度以及Ir(ppy)3和DCJTB的浓度,可以得到相当纯正的白光,其色坐标为(0.33,0.32),在10～19 V的范围内几乎不随驱动电压的变化而变化.     

加CdS薄层的有机电致磷光白光器件性能的优化

采用CBP和MCP做主体,分别掺杂磷光铱配合物Ir(piq)2(acac)和FIrpic作为红光发光层和蓝光发光层,研究了红光发光层和蓝光发光层的位置对器件性能的影响,得出结构为ITO/2T/NPB/MCP∶Firpic/CBP/CBP∶Ir(piq)2(acac)/Bphen/CdS/LiF/Al的器件性能较好。当CdS的厚度为0.1nm,电流密度为161mA/cm2时,器件的最大效率比不加CdS的器件的最大效率提高了1.42倍。亮度也有较大提高。在电流密度为225mA/cm2(电压为17.5V)时,最大亮度为20 890cd/m2,比不加CdS的器件的最大亮度16 610cd/m2高出4 280cd/m2。     

利用辅助掺杂改善红光有机电致发光器件的性能

以Coumarin(C545)做辅助掺杂剂,制作了结构为氧化铟锡(ITO)/N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4,-4′-二胺(NPB)/8-羟基喹啉铝(Alq3):C545:4-二氰亚甲基-2-叔丁基-6-(1,1,7,7-四甲基久咯呢定基-9-烯基)-4H-吡喃(DCJTB)/Alq3/LiF/Al的红光有机电致发光器件(OLED).研究了不同掺杂质量分数对器件性能的影响,结果发现,掺C545和DCJTB的器件性能与只掺DCJTB的器件相比较,其色纯度、亮度及效率均有所提高,器件性能的改善主要是由于掺入的C545提高了由基质Alq3向红光染料DCJTB进行能量传递的效率.     

电子传输层中掺杂Ir(ppy)_3改善白光OLED的效率

采用真空热蒸镀技术,制备了结构为ITO/NPBX(40nm)/rubrene(0.2 nm)/NPBX(5nm)/DPVBi(30nm)/TPBi:x%Ir(ppy)3(30nm)/LiF/Al的白光器件。利用Ir(ppy)3掺杂到电子传输层TPBi中,在掺杂层中提高了电子的迁移率,调整了空穴和电子的平衡,从而改善了白色有机电致发光器件的效率。当Ir(ppy)3的掺杂浓度为6%时,器件的电流效率最高,在驱动电压9 V时最大电流效率为10.66 cd/A,此时色坐标为(0.36,0.38);当电子传输层TPBi中不掺杂Ir(ppy)3时,白光器件的效率最低,在驱动电压10V时最大电流效率为1.69 cd/A,此时色坐标为(0.31,0.30)。掺杂浓度为6%的白光器件的电流效率是不掺杂白光器件的电流效率的6.3倍。     

通过Ir(ppy)3敏化黄光发射的白色有机电致发光器件

通过Ir(ppy)3的磷光敏化作用,制作了结构为:ITO/2T-NATA(20 nm)/NPBX(20 mm)/CPB∶x%Ir(ppy)3∶0.5%rubrene(8 nm)/NPBX(5 nm)/DPVBi(30 nm)/Alq(30 nm)/LiF(0.5 nm)/Al的有机白光器件.当Ir(ppy)3的掺杂浓度为6%时,器件的性能最好.在15 V的电压下最大亮度达到24 960 cd/m2,在电压为8 V的情况下,发光效率达到最大,为5.17 cd/A.该器件的色坐标在白光等能点附近,是色度较好的白光器件.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.