一种长延时信道的加密IP数据加速方法

长延时信道传输TCP/IP数据受信道时延特性影响,分组传输速度由延时决定,而不取决于信道速率,造成信道速率越高传输效率越低下的问题。采用IP协议加速器可以有效提高卫星信道传输速率,进而提高卫星信道利用效率。但是,加密IP数据将传输层数据作为一个整体进行处理,传统的加速方法无法适用于这种数据的加速传输。将经过加密的传输层数据作为一个整体,重新封装成标准TCP或UDP格式,使用相应的加速策略,判断加速与否,采用相应加速方法,加速数据传输,从而解决加密IP数据的加速问题。     

基于DAMA卫星系统的IP接入设计

TCP协议是面向连接的网络传输协议,当其应用在信道资源按需分配(DAMA)的卫星系统中时,TCP连接开始时所需的卫星链路并不存在,从而会导致TCP连接建立的失败。IP接入控制器配置在IP网络、卫星信道及网络管理设备之间,通过IP过滤、IP欺骗等方法将TCP数据转化为申请信令。解决了TCP业务的传输与卫星信道按需分配的匹配问题。     

卫星宽带IP技术研究

卫星IP网络是当前研究的热点之一。进一步发展Internet业务需要增大带宽并且要有移动性,因而卫星网与IP网结合成了热门话题。TCP协议是TCP/IP协议栈的主要传输协议,它在网络中的传输效率是影响IP网络传输性能的关键因素之一。首先介绍卫星IP特点,针对卫星网的信道差错率高、传播延迟长和信道不对称等特点,对TCP协议在卫星网络中的传输性能进行了分析,提出了相应的改进措施。     

卫星IP通信网设计技术

卫星通信网用于传输IP业务时面临一些特有的问题。论述了卫星通信特有的长延时和误码特性对各种IP业务的影响并给出了一些切实可行的解决办法;着重阐述卫星IP通信网设计时,如何进行路由协议选择、提高卫星信道利用率、广播风暴、备份信道切换路由问题以及关注IP信道质量如何衡量等问题,给出了每个问题的解决办法和一些切实可行的措施,对有些问题专门做了研究试验,提供了一些试验测试数据、曲线和有关示意图。     

NEWTEC 卫星IP加速器PEP-Box 3000介绍

卫星IP加速器、TCP/IP加速、数据压缩/加密、多种业务不同优先及控制、可加速的VPN通过卫星和移动网络来访问公共IP网络已经日益被私人和企业用户所接受,并日益成为运营商的主要业务之一。但是,TCP和HTTP这两个在Internet上应用最广泛的协议,在像卫星网络这类高延时、高丢包率的系统中却只能提供非常低的传输效率,用户只能得到非常低     

卫星IP网络中传输控制协议的研究

传输控制协议(TCP)是TCP / IP协议栈的主要传输协议,它在网络中的传输效率是影响IP网络传输性能的关键因素之一。当网络中存在卫星链路时,卫星链路的一些固有特性会使TCP的传输性能受到一定影响。文中首先指出卫星信道的特点,对TCP协议在卫星网络中的传输性能进行了分析,重点介绍最近几年这方面的研究成果。     

IP网络性能与分组传送延时问题及其解决方案

1引言目前,提高IP网络的传输效率以及保证IP网络实时性业务通信质量面临的最严峻挑战是网络延时问题。问题源于IP网络采用自动请求重发(ARQ)纠错的数据传输机制,需要使用反向通路,过大的延时,将严重降低网络系统的传输效率。而IP网络的实时性通信业务的传递密切依赖于网络情况,分组传送延时的大小直接影响着它的通信质量,然而目前的网关一般较难解决分组传送延时问题,因此,解决网络分组传送延时,提高IP网络通信质量成了TCP/IP系统技术又一课题。2IP网络分组传送延时IP网络中,数据分组的端到端传送延时包括:编、解码造成的延时;打包…     

卫星Internet接入技术浅析

Internet业务正在向移动网络方面发展,卫星网与Internet网结合成了热门话题。但是卫星网的信道差错率高、传播延迟长和信道不对称性对Internet采用的TCP/IP协议的传播性能有不良影响,该文在介绍卫星Internet接入方案的基础上,讨论了适用于卫星Internet的TCP/IP协议改进的关键和难点。     

卫星通信在因特网中的应用

因特网正在以迅猛的速度飞速发展，卫星作为一种重要的通信手段，其传输的因特网业务也日益增加。本针对卫星信道的长延时特点对TCP办议在卫星信道上的传输效率进行了分析，同时对当前的各种解决方案作了简单介绍，最后介绍了下一代卫星宽带多媒体网络。     

基于TDMA卫星通信系统的TCP增强技术研究

时分多址(TDMA)卫星通信系统具有组网灵活、能够有效地利用卫星资源、支持各类综合业务的接入等优点,目前已经成为国内外卫星发展和研究的热点。针对TDMA卫星通信系统的特点,提出了一种适用于TDMA卫星信道带宽动态变化条件下的传输控制层协议(TCP)加速机制。利用OPNET网络仿真工具对TDMA卫星通信系统进行了仿真建模,仿真结果表明,该TCP加速机制能有效提高IP数据的传输效率。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.