实时视频采集系统的SDRAM控制器设计

描述了一种在PAL→VGA的实时视频采集系统中图像数据处理的方法.针对实时视频采集系统一般使用2片SDRAM进行乒乓缓存的方式,给出一种使用一片SDRAM的不同BANK进行乒乓操作的相对容易实现的SDRAM控制器设计方法.该方法通过充分利用SDRAM的切换BANK存取操作并采用指令计数的方式进行读写状态转换,在PAL→VGA实时视频采集系统中实现了利用一片SDRAM进行图像缓存.它在实时视频采集系统中图像数据处理方面,具有良好的应用价值.     

嵌入式实时图像处理系统中SDRAM控制器的实现

介绍一种用于嵌入式实时图像处理系统的SDRAM控制器的实现方案.根据实时系统对数据传输速率及连续性的要求,将SDRAM配置为全页突发操作模式,并采用异步FIFO作为FPGA与SDRAM间的数据缓冲器.为配合SDRAM的全页操作模式,并充分利用其高速读写性能,将FIFO设计为基于乒乓操作的流水线结构,实现了数据的无缝缓存.将该方案用于实时红外热成像系统,经实验结果表明,该SDRAM控制器执行效率高,占用资源少,可移植性强.     

基于FPGA的SDRAM读写双口控制器设计

在研究了SDRAM工作特性的基础上,提出了利用FPGA将单片SDRAM作为乒乓RAM的双口接口设计。采用ALTERA公司的EP1C6Q240C8和HYNIX的HY57V161610DTC-8，将FPGA作为主控制器，并在其中配置两块删分别作为SDRAM的输入、输出缓冲区。前者接收外设慢速数据流，经处理后写入到SDRAM，后者读取SDRAM中数据,为外围高速设备提供高速数据流。高速数据流按自定义数据包间续发送，在此问隔中执行慢速数据流写入SDRAM和自动刷新SDRAM的操作。     

基于CPLD的SDRAM控制器

高速数据采集卡设计中需要大容量的存储单元,静态存储器无法满足容量要求,故选用同步动态存储器(SI)RAM)为该数据采集系统的存储单元。通过VIIDL语言描述电路,设计了基于CPL,D的SDRAM控制器,从而简化了主机对SDRAM的读写及其相关操作。SDRAM控制器设计采用自顶向下模块化的设计方法,共分为四个模块：SDRAM控制器顶层模块、控制接口模块、命令模块和数据通路模块,SDRAM控制器顶层模块初始化并把其余三个模块有机地结合起来。测试结果证明设计的SDRAM控制器成功地实现了对SDRAM的读写操作,地址、数据、控制信号时序匹配,满足了系统设计要求。     

Base型Camera Link脱机存储系统设计

为解决现有Base型Camera Link相机需要专用采集卡和系统机才能存储的问题,设计了基于FPGA的脱机存储系统.该系统使用两片SDRAM交替缓存图像后,经乒乓操作存储到两块IDE固态硬盘中.该系统实现了分辨率为640×480,帧频为100 f/s的10位图像数据存储.实验表明系统实现了图像数据的完整存储.     

基于DDR2 SDRAM乒乓双缓冲的高速数据收发系统设计

在高速数据收发系统设计中,首先需要解决的问题是实时数据的高速缓存,然而FPGA内部有限的存储资源无法满足海量数据缓存的要求。为了解决系统中海量数据的缓存问题,系统创新提出了一种基于DDR2 SDRAM的乒乓双缓冲设计方案。方案设计了两路基于DDR2 SDRAM的大容量异步FIFO,通过FPGA内部选择逻辑实现两条通路间的乒乓操作,从而实现数据的高速缓存。实验结果表明,基于DDR2 SDRAM的数据收发系统实现了每路512 Mbit的缓存空间和200 MHz的总线速率,解决了海量数据的高速缓存问题。     

基于AMBA-AHB总线的SDRAM控制器设计

为了在嵌入式系统设计中实现对SDRAM存储器的访问,提出了一种基于AMBA-AHB总线规范的SDRAM控制器设计方案。首先简要介绍了AMBA总线规范,然后在完成整个存储控制器的整体框架设计的基础上给出了SDRAM控制器的实现原理以及详细的子模块划分。整个控制器的设计已用Verilog HDL语言实现并通过了Modelsim仿真和FPGA验证。仿真结果表明所设计的控制器符合SDRAM内部指令操作,并且满足了严格的时序要求。     

基于SDRAM的视频处理器设计与实现

在认真研究了SDRAM内部的独立存储体（Bank）作用的基础上，提出了一种基于SDRAM的视频处理器的设计方案；该方案是通过Bank乒乓操作和场乒乓操作来实现的；利用该设计方案能够实现视频图像的旋转、截取、平移等实时视频操作和处理。     

SDRAM控制器简易化设计

SDRAM存储芯片拥有快速读写的性能,可以应用以回波模拟系统作为数据高速缓存器。SDRAM芯片是由SDRAM控制器控制的,SDRAM控制器有严格的控制时序和工作状态,可以使用有限状态机理论和VerilogHDL语言对FPGA进行模块化开发设计。笔者基于FPGA给出了一种SDRAM控制器简易化设计方法,实验结果表明该方法简化了SDRAM控制器的设计。     

3D显示器视频转换系统设计及其FPGA实现

针对SXGA(1280×1024)格式高速视频信号的传输特性,结合FPGA技术设计了适用于43cm(17in)自由立体液晶显示器的3D视频信号转换系统。以FPGA芯片作为显示控制器,采用乒乓操作的设计思想协调两组SDRAM完成不同3D模式下对视频信号的实时读写控制,从而实现多制式的立体显示。该设计方案具有不降低显示刷新率、电路结构简单、设计灵活性高的特点,只要通过适当修改代码即可应用于更大尺寸的立体显示器。对系统硬件组成及工作原理进行了分析,并着重介绍了基于乒乓操作的SDRAM控制器的设计与实现。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.