外腔式KTP光学参量振荡器的实验研究

利用脉冲氙灯抽运的Nd：YAG被动调Q激光器输出的1．06μm激光脉冲泵浦KTP光学参量振荡器,获得脉宽3ns、单脉冲能量30mJ、中心波长1568nm的信号光输出。信号光脉冲宽度（3ns）比抽运光脉冲宽度（12ns）4,得多。实验表明,随着OPO腔长的增加单脉冲输出能量减小,随着抽运光能晕的增加单脉冲输出．能晕增大,...     

信号光脉冲比抽运光窄12倍的内腔式KTP光参量振荡器

在闪光灯抽运的非稳腔Nd∶YAG被动调Q激光器腔内,放置非临界相位匹配KTP晶体,构成内腔式单谐振KTP光参量振荡器(OPO)。研究了输出信号光的波长调谐性能,获得1.57~1.60μm可调谐激光脉冲。实验结果表明,1.57μm信号光的输出能量随着光参量振荡器腔长的增加而减少,脉冲宽度随着腔长的增加而有所变化;抽运能量较大时,转换效率随着抽运能量的增加趋于饱和然后逐渐下降;对此给予了合理的理论解释。当光参量振荡器的腔长为5 cm,1.06μm抽运光脉冲宽度为30 ns时,输出的1.57μm信号光的脉冲宽度为2.5 ns,能量为21.3 mJ。1.57μm信号光的脉冲宽度仅为1.06μm抽运光脉冲的1/12,总的电光能量转换效率为0.128%。     

人眼安全的高效腔内KTP光学参量振荡器

描述了用闪光灯抽运的Q开关Nd：YAG激光器在1．064μm抽运以KTP为基础的光学参量振荡器的性能和进展。实验研究了光学共振腔构型对光学参量振荡器(OPO)性能的影响。用稳定短腔KTP光学参量振荡器得到了1．57μm、40mJ输出能量。在近2倍振荡阈值之上工作获得效率(闪光灯输入能量与光学参量振荡器信号波输出能量之比)0.55%。在5-50Hz范围内输出脉冲能量与闪光灯输入能量的关系不变。     

非临界相位匹配的人眼安全KTP光参量振荡器

报道了一台电光调Q,Nd∶YAG激光器泵浦的KTP脉冲光参量振荡器(OPO),获得了高单脉冲能量的人眼安全激光输出。KTP晶体按非临界相位匹配θ=90°和φ=0°进行切割,在Ⅱ类相位匹配(o→o+e)下,1.064μm的泵浦激光转换为人眼安全的1.57μm激光。KTP晶体的尺寸为10 mm×10 mm×20 mm,OPO谐振腔采用信号光单谐振的外腔结构,当二极管泵浦的Nd∶YAG激光器输出的1.064μm激光单脉冲能量为350 mJ,重复频率为10 Hz时,获得了单脉冲能量117 mJ的1.57μm激光输出,转换效率约为33.4%。     

1J倍频Nd∶YAG激光器

报道了倍频Nd∶YAG固体激光器的研究结果,激光器系统由一级板条Nd∶YAG激光振荡器、三级板条放大器和KTP倍频晶体等构成,输出倍频激光能量大于1J,脉冲重复频率1Hz,脉冲宽度6ns～9ns,倍频效率约为48%.     

4～5μm全固化可调谐激光实验研究

报道了采用KTP晶体和LiIO3晶体实现4~5μm可调谐激光输出的光参量振荡器(OPO)至差频产生器(DFG)的全固化结构和相应的实验结果。其中光参量振荡器的抽运源为倍频Nd∶YAG激光,差频产生器的抽运源分别是上述光参量振荡器激光和Nd∶YAG基频激光经KTP倍频晶体后剩余的1.064μm激光。实验中Nd∶YAG基频脉冲激光脉宽12 ns,单脉冲能量300 mJ。观察到最大倍频效率达到66.7%,KTP参量量子转换效率达到50%,差频量子转换效率为1.5%,在4.45μm得到了单脉冲100μJ的激光输出。差频光的调谐范围为4.1~4.5μm,发散角为垂直方向12 mrad,水平方向4 mrad。     

1.57 μm内腔式OPO激光输出特性的研究

利用Cr^4＋：YAG调Q的1．06μm Nd：YAG激光腔抽运内腔式KTP晶体-光学参量振荡器（KTP-OPO）系统,实现了人眼安全1．57μm信号光振荡输出。通过分析Cr^4＋：YAG被动调Q特性,在保证单脉冲输出的情况下,讨论了OPO腔长变化对系统输出激光脉冲能量、发散角和脉宽的影响。结果表明,随着OPO腔长的增加,单脉冲输出能量、光束发散角减少,而脉冲宽度增加。     

1.57μm内腔光学参量振荡器研究

对内腔光学参量振荡器的工作机理进行了简要分析 ,报道了一种高效、紧凑的 1.5 7μm人眼安全内腔光学参量振荡器的实验结果。它的泵浦源为水冷闪光灯泵浦KD P电光调Q (Ce ,Nd) :YAG激光器 ,采用KTPⅡ类非临界相位匹配 ,输出信号光脉冲能量最高达 87.7mJ ,脉宽约7ns ,重复频率为 10Hz ,总电光效率最高达 5 .8‰ ,器件外形尺寸为 4 10mm× 130mm× 80mm。     

KTP单共振光学参量振荡器

本文报道Nd:YAG激光器的二次谐波泵浦的KTP光学参量振荡器的实验结果。实验获得了1.46～1.78μm的单共振参量振荡输出。最高输出能量达15mJ/脉冲,最高量子转换效率为14％。     

激光二极管侧面抽运声光调QNd∶YAG/KTA 1.57μm人眼安全光参量振荡激光器

利用激光二极管(LD)阵列侧面抽运声光(AO)调Q的Nd∶YAG激光器作为抽运源,研究了在不同声光重复频率和输出镜透过率的情况下,内腔式KTA-光参量振荡器(OPO)的输出特性。通过对单谐振光参量振荡器阈值公式的讨论,采用平凹腔的结构以及较短的腔长,降低了光参量振荡器的振荡阈值。当声光重复频率为4 kHz,输出镜透过率为30%,抽运电流为14.5 A时,光参量振荡器的1570 nm激光输出脉冲峰值功率达到5.6×104W,脉冲宽度为2.5 ns,实验中最大平均输出功率为560.3 mW。结果表明,具有良好热性能的非线性晶体KTA是制造小型、轻便光参量振荡激光器的理想材料。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.