伺服控制系统中液晶显示设计

基于高速单片机芯片C8051F120和CPLD芯片EPM570T100,设计了一种高精度伺服控制器。该控制器具有LCD显示和通过串口设置显示菜单的功能,可以实时地在液晶屏上显示伺服控制系统的控制信息。给出了该伺服控制系统液晶显示模块的硬件结构设计和软件流程设计。实验结果表明,该液晶显示模块设计具有工作稳定、刷新速度快的特点,能够满足伺服控制系统实时显示的要求。     

线阵CCD高精度测隙装置的研制

传统的机械式缝隙测量存在着耗时长、精度低的缺点,设计了一种以线阵CCD作为光电传感器的测隙装置。首先设计了测隙装置的总体方案,分析了方案的可行性;其次以CPLD为驱动利用Verlog-HDL语言设计了线阵CCD的工作时序,在对输出信号分析的基础上,设计了适用于本装置的二值化电路;最后以单片机采集数据并实现了和PC间的通讯。从实验结果来看,方案达到了设计中的要求,测量分辨率达到了±0.011 mm。     

基于CPLD的线阵CCD驱动电路设计

论述了线阵CCD驱动电路的工作原理和现状,选择基于CPLD驱动线阵CCD工作的方案。采用MAXⅡ器件的EPM240T100C5N为控制核心,以TCD1500C为例,设计了基于CPLD的线阵CCD驱动电路,完成了硬件电路的原理图的设计,并实现了软件调试。通过QuartusⅡ软件平台,对其进行了模拟仿真。实验结果表明,设计...     

CPLD与LCD的接口设计

采用VHDL语言设计了CPLD和LCD接口。设计中CPLD选用了Altera公司生产的EPM9560器件,采用320×240点阵图形式液晶屏进行显示,通过软件仿真验证了该程序设计的可靠性。验证了利用VHDL语言设计的电路能够灵活地修改参数,而且大幅提高了电路设计的通用性和可移植性。     

CPLD在数字频率计设计中的应用

文章论述了基于单片机和CPLD的等精度数字频率计的设计方法,等精度的测量方法具有较高的测量精度和整个频率区域保持恒定测试精度的特点。该频率计利用单片机完成整个测量电路的数据处理、测试控制和显示输出,利用CPLD来实现频率、周期、脉宽和占空比的测量计数。本频率计包括硬件电路和软件编程两部分,硬件电路主要包括电源模块、输入信号整形模块、键控制模块、显示模块、单片机和CPLD模块。CPLD采用vHDL硬件描述语言,单片机采用C语言编程。     

基于S51单片机与CPLD的综合实验系统研制

笔者基于S51单片机与CPLD设计并实现了一个综合实验系统,本系统在设计过程中采用了开放式系统结构设计方案,即各功能单元都是独立结构,具备相应的输入或输出接口,实验时通过连接线搭建实验电路,从而使得学生可以自由构建实验电路,为学生提供了与其它实验设备配合使用的接口.实验结果表明:该系统不仅可分别开设单片机和CPLD的独立实验,而且可开设单片机与CPLD的综合实验,适用于高校课程验证实验教学和电子信息类毕业设计.     

多路压电陶瓷驱动器电压实时监测系统设计

为了满足自适应光学系统中多路压电陶瓷高压驱动器输出电压实时监测、显示的需要,提出了基于高速单片机C8051F120的电压测量、显示和通讯系统设计方案。利用20路电压测量模块实现电压采集,通过ModBus RTU通讯协议对采集到的电压数据进行接收、处理和LCD液晶显示。详细介绍了液晶显示接口的硬件设计方案,电压测量模块与单片机的通信以及软件设计方法,通过实验验证了此液晶模块实时监测显示系统的良好效果。     

一款高精度数显温度计的设计与制作

温度是工农业生产中经常需要测量的一个物理量，因此研究温度的测量方法就具有重要的意义。本文介绍了一款用于蔬菜大棚温度监测的高精度数显温度计的设计与制作，该电路具有测量精度高，反应灵敏、应用灵活的特点，能方便地实时显示当前的环境温度，并且稍作改动后即可与单片机等自控装置进行连接，可广泛应用于工农业生产现场的实时温度监测。     

自制基于CPLD的多功能计数测频仪

在设计单片机和数字电路时经常需要测量脉冲个数、脉冲宽度、脉冲周期、脉冲频率等参数,虽然使用逻辑分析仪可以很好地测量这些参数,但其价格过于昂贵。笔者基于Altera公司的EPM7064SLC可编程逻辑芯片(CPLD),设计了一种多功能计数测频仪,可以进行脉冲计数,测量脉冲宽度、周期和     

基于DSP的电子测量装置的液品显示模块设计研究

针对传统的电子测量装置在实际应用中暴露出来的只能采集测量数据却无法实时波形显示的弊端,论文主要探讨设计了基于DSP的电子测量装置的“数字示波器”模块一液晶显示模块．在分析了示波器的基本原理的基础上,提出了该液晶数显系统的工作原理,并重点而详细的给出了电子测量装置数显示渡模块的功能逻辑与硬件电路的设计方案,从而为电子测量装置所测量采集到的数据的实时波形化显示提供了有力的技术保障．同时对于电子测量装置的便携化、数字显示化的设计与应用,都具有一定的借鉴意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.