热处理对TaN薄膜电性能的影响

采用直流磁控溅射法在Al2O3陶瓷基片上制备了TaN薄膜,研究了热处理温度和时间对TaN薄膜的方阻(R□)及电阻温度系数(TCR)的影响。研究发现,在热处理时间为2h的条件下,热处理温度在200℃到600℃变化时,R□从12?/□增加到24?/□,TCR从15×10-6/℃下降到-80×10-6/℃;在热处理温度为300℃的条件下,热处理时间对R□及TCR影响较小,随着热处理时间的增长,R□及TCR略有变化。     

Cu掺杂对TaN薄膜的电性能影响研究

采用反应直流磁控溅射法在镍锌铁氧体基片上制备Cu掺杂的TaN薄膜。通过调节氮流量,研究了不同氮流量下Cu掺杂对TaN薄膜电性能的影响。由XRD结果可见,TaN薄膜中掺杂Cu可在2θ=54°出现Cu3N相,在2θ=57°出现CuN6相。氮流量的增加造成的结果:Cu掺杂的TaN薄膜厚度逐渐减小,薄膜的方阻和电阻温度系数(TCR)绝对值均增加。与无Cu掺杂的TaN薄膜的方阻和TCR作了比较,发现TaN薄膜掺杂Cu可有效改善薄膜的方阻和TCR。     

氮分压对磁控溅射制备TaN薄膜性能的影响

采用直流反应磁控溅射法制备了TaN薄膜,研究了φ(N2)对薄膜的结构和性能影响。研究发现,在N2分压(体积分数)为9%时,多相共存的TaN薄膜表现出TaN(200)面择优取向,方阻和αt达到最佳,其值为52Ω/□和–306×10–6/℃。薄膜的方阻、电阻温度系数αt和晶粒尺寸都随着N2分压的增大而增大:当N2分压高于11%时,薄膜的方阻和αt增长较快。     

TiO_2过渡层对Bi_(3.54)Nd_(0.46)Ti_3O_(12)薄膜微观结构及电性能的影响

选取厚度为5、10和20nm的TiO2薄膜为过渡层,采用sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Bi3.54Nd0.46Ti3O12(BNT)铁电薄膜,研究了过渡层厚度对铁电薄膜微观结构及电学性质的影响。结果表明,加入TiO2过渡层后,BNT薄膜微观结构得到改善,εr及2Pr值大幅提高,介电损耗及漏电流密度都有降低。过渡层厚度为20nm时,BNT薄膜的εr、tanδ及2Pr值分别为325、0.025(测试频率为10kHz)和36.1×10–6C/cm2,漏电流密度为8.45×10–7A/cm2(外加电场为100×103V/cm)。     

碲化铅薄膜电学特性的研究

用真空蒸镀法制备了Pb49Te51薄膜,并对薄膜的显微结构、导电类型和电阻率等电学特性及热处理对薄膜性能的影响进行了研究。结果表明:热处理对薄膜结构和性能影响很大,热处理后薄膜呈铜黄色,晶粒有明显取向,其形状为片状,且晶粒尺寸变大为300~400nm;薄膜为p型半导体薄膜,其电阻率4.624×10–2Ω.cm比晶体材料12.410×10–2Ω.cm大。     

二氧化锡覆盖层对ITO透明导电薄膜热稳定性的改良

采用射频磁控溅射法在ITO玻璃表面沉积了一层15 nm左右的SnO2薄膜。利用霍尔效应测试仪、四探针电阻测试仪、场发射电子显微镜及紫外–可见–近红外光谱仪分析了所制薄膜的电学性质、表面形貌和光学性质。结果表明,在300~600℃退火后镀有SnO2覆盖层的ITO(SnO2/ITO)薄膜具有相对好的热学稳定性。在600℃退火后,ITO薄膜的方阻和电阻率分别为88.3Ω/□和2.5×10–3.cm,而此时,SnO2/ITO薄膜的方阻和电阻率仅为43.8Ω/□和1.2×10–3Ω.cm。最后,阐述了SnO2覆盖层提高ITO薄膜热稳定性的机制。     

La掺杂对BLT薄膜微观结构与性能的影响

采用sol-gel工艺低温制备了Si基Bi4–xLaxTi3O12(BLT)铁电薄膜。研究了La掺杂量对薄膜微观结构、介电和铁电性能的影响。结果表明,600～650℃退火处理的BLT薄膜表面平整无裂纹,晶粒均匀,无焦绿石相或其它杂相,薄膜为多晶生长;La掺杂量x在0.5～0.85的BLT薄膜介电与铁电性能优良,其εr和tanδ分别介于284～289和(1.57～1.63)×10–2,4V偏压下薄膜的漏电流密度低于10–8A/cm2,Pr可达(13.0～17.5)×10–6C/cm2,Ec低至(102.5～127.8)×103V/cm。     

采用氧化物复合底电极的BTO薄膜结构和性能

用球磨法制备Bi4Ti3O1(2BTO)靶材。用PLD法在Pt/TiO2/SiO2/Si基片上先分别以三种氧化物SrRuO(3SRO)、LaSrCoO3(LSCO)、LaNiO3(LNO)和Pt生成复合底电极,再在其上生长了外延取向的BTO薄膜。分析了薄膜的结构和性能。结果表明,这种BTO薄膜的c轴取向得到抑制,其极化强度从0.45×10–6C/cm2提高到0.9×10–6C/cm2;矫顽场强从90×103V/cm下降到50×103V/cm。     

衬底温度和溅射偏压对ZnO:Al透明导电膜结构和光电特性的影响

利用射频磁控溅射法在有机薄膜衬底和7059玻璃衬底上制备出了具有良好附着性的低电阻率的 ZnO:Al透明导电膜。研究了薄膜的结构和光电特性与衬底温度的关系,薄膜为多晶纤锌矿结构,垂直于衬底的 c 轴具有[002]方向的择优取向,薄膜的最低电阻率分别为 1.01×10–3ù·cm 和 8.48×10–4ù·cm,在可见光区的平均透过率分别达到了72%和 85%。并研究了溅射偏压对有机衬底 ZnO:Al 薄膜结构及光电特性影响,最佳负偏压为 60 V。     

磁控溅射的TaN薄膜的扩散阻挡性能

用反应磁控溅射方法在SiO2/Si(100)衬底和Cu薄膜间溅射一层TaN阻挡层,测试不同N气分压及热处理温度下Cu/TaN/SiO2/Si薄膜的显微结构和电阻特性.同时利用微细加工技术加工了镂空的Cu互连叉指测试结构,研究了TaN薄膜在镂空的铜互连结构中的扩散阻挡性能.结果发现,在退火温度不超过400 ℃时,薄膜电阻率均低于80μΩ·cm,而当溅射N分压超过10%,退火温度超过400℃时,薄膜电阻率很快上升.低N气分压下(≤10%)溅射时,即使退火温度达到600 ℃,薄膜电阻基本不变.     

退火温度对Cr-Si压阻薄膜电性能的影响

采用射频磁控溅射法在氧化铝陶瓷基底上制备了Cr-Si-Ni-Ti压阻薄膜,研究了不同退火温度对薄膜电性能的影响.结果表明:在溅射态及退火温度低于600℃时,薄膜为非晶态.随着退火温度的升高,薄膜的电阻温度系数(TCR)逐渐增大,应变因子(GF)先增大后减小,室温电阻率(ρ)则逐渐降低.在退火温度为300℃时,Cr-Si...     

ITO薄膜的制备及其光电特性研究

采用直流磁控溅射法,分别用ITO陶瓷靶、In-Sn合金靶,在玻璃基片上镀膜。研究ITO透明导电膜其膜厚、靶材、溅射气压和溅射速率等工艺对光电特性的影响。结果表明,采用陶瓷靶镀膜要比合金靶效果好,膜厚70nm以上、溅射气压0.45Pa和溅射速率23nm/min左右为最佳工艺条件,并得到了ITO薄膜电阻率1.8×10–4Ω.cm、可见光透过率80%以上。     

射频磁控溅射法制备掺锆氧化锌透明导电薄膜

利用射频磁控溅射法在室温下制备出了掺锆氧化锌(ZnO∶Zr)透明导电薄膜。研究了溅射压强对ZnO∶Zr薄膜表面形貌、结构、光学和电学性能的影响。结果表明:ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向,溅射压强对薄膜电阻率有显著影响,压强为1.5Pa时,电阻率具有最小值1.77×10–3Ω·cm。所制备的ZnO∶Zr薄膜具有良好的附着性能,在可见光区平均透过率超过93%。     

BST薄膜的膜厚与铁电性能关系研究

采用射频磁控溅射法制备了Ba.6Sr0.4TiO3(BST)薄膜,研究了不同膜厚的BST薄膜的介电偏压特性曲线和电滞回线。结果表明,当膜厚从250nm增加到650nm时,BST薄膜的εr、εr的电压变化率和最大极化强度分别从195,9%,4.7×10–6C/cm2逐渐增加到1543,19%,30×10–6C/cm2,而矫顽场强随膜厚的变化较复杂。进一步分析发现,膜厚通过影响矫顽场强和最大极化强度进而影响铁电薄膜的电压非线性。     

Effect of thickness on the structural,optical and electrical properties of RF magnetron sputtered GZO thin films

Gallium-doped zinc oxide (GZO) thin films with very high conductivity and transparency were successfully deposited by RF magnetron sputtering at a substrate temperature of 400 °C. The dependence of the film properties over the thickness was investigated. X-ray diffraction (XRD) results revealed the polycrystalline nature of the films with hexagonal wurtzite structure having preferential orientation along [001] direction normal to the substrate. The lowest resistivity obtained from electrical studies was 5.4×10⁻⁴ Ω cm. The optical properties were studied using a UV–vis spectrophotometer and the average transmittance in the visible region (400–700 nm) was found to be 92%, relative to the transmittance of a soda–lime glass reference for a GZO film of thickness 495 nm and also the transparency of the films decreases in the near IR region of the spectra. The mobility of the films showed a linear dependence with crystallite size. GZO film of thickness 495 nm with the highest figure of merit indicates that the GZO film is suitable as an ideal transparent conducting oxide (TCO) material for solar cell applications.     

工艺对磁控溅射ZAO薄膜光电特性的影响

在玻璃衬底上用直流磁控溅射的方法镀制ZAO透明导电膜,研究了温度、氧压比、溅射气压、溅射速率等工艺条件对ZAO膜电阻率和可见光透过率等光电特性的影响。实验结果表明,当温度470℃、氧氩比0.5/40、溅射气压0.5Pa和镀膜速率3.6nm/min左右时,可获得薄膜电阻率7.2×10–4?·cm、可见光透过率85%以上的最佳光电特性参数。     

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

Niobium-doped indium tin oxide （ITO:Nb） thin films are prepared on glass substrates with various film thicknesses by radio frequency （RF） magnetron sputtering from one piece of ceramic target material. The effects of thickness （60-360 nm） on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction （XRD）, ultraviolet （UV）-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented （400） direction. The lowest resistivity of the films without any heat treatment is 3.1×10^-4 Ω·cm^-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×10²¹ cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.     

Thickness Effect of Nb-Doped TiO<Subscript>2</Subscript> Transparent Conductive Oxide Grown on Glass Substrates Fabricated by RF Sputtering

Transparent conducting Nb-doped titanium oxide (NTO) films were deposited on a non-alkali glass substrate using an RF magnetron sputtering method with post-annealing. Structural, electrical and optical properties of the NTO films were found to be strongly dependent on film thickness. A resistivity of 4.2 × 10^?3 Ω cm and an average visible transmittance of ～70% were obtained at the film thickness of 360 nm, indicating that the polycrystalline NTO fabricated by the sputtering method has sufficient potential as a transparent conducting oxide (TCO) candidate for practical applications.     

ITO薄膜厚度和含氧量对其结构与性能的影响

在玻璃衬底上用直流磁控溅射的方法镀制ITO透明半导体膜,采用X射线衍射技术分析了膜层晶体结构与薄膜厚度和氧含量的关系,并测量了薄膜电阻率及透光率分别随膜厚和氧含量的变化情况。以低氧氩流量比(1/40)并控制膜厚在70nm以上进行镀膜,获得了结晶性好、电阻率低且透光率高的ITO透明半导体薄膜,所镀制的ITO膜电阻率降到1.8×10–4?·cm,可见光透光率达80%以上。