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Effect of thickness on the structural,optical and electrical properties of RF magnetron sputtered GZO thin films |
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| Affiliation: | 1. Department of Physics and Materials Science, PSG College of Technology, Coimbatore, India;2. Department of Nanotechnology, Karunya University, Coimbatore, India;3. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India;1. School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Malaysia.;2. Faculty of Technology of São Paulo, São Paulo, Brazil;1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan;2. Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;1. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia;2. LUNAM, Université de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la Houssinière, BP 92208, Nantes F-44322, France;1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;2. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610000, China;2. State Key Laboratory for Mechanical Behavior of Materials, Xi''an Jiaotong University, Xi''an 710049, China |
| Abstract: | Gallium-doped zinc oxide (GZO) thin films with very high conductivity and transparency were successfully deposited by RF magnetron sputtering at a substrate temperature of 400 °C. The dependence of the film properties over the thickness was investigated. X-ray diffraction (XRD) results revealed the polycrystalline nature of the films with hexagonal wurtzite structure having preferential orientation along 001] direction normal to the substrate. The lowest resistivity obtained from electrical studies was 5.4×10−4 Ω cm. The optical properties were studied using a UV–vis spectrophotometer and the average transmittance in the visible region (400–700 nm) was found to be 92%, relative to the transmittance of a soda–lime glass reference for a GZO film of thickness 495 nm and also the transparency of the films decreases in the near IR region of the spectra. The mobility of the films showed a linear dependence with crystallite size. GZO film of thickness 495 nm with the highest figure of merit indicates that the GZO film is suitable as an ideal transparent conducting oxide (TCO) material for solar cell applications. |
| Keywords: | Thin films Sputtering Optical properties Atomic force microscopy Transmission electron microscopy (TEM) Resistivity |
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