Ku波段宽角扫描圆极化微带阵列天线设计

提出了一种三馈电圆极化微带天线。天线馈电网络采用一分三功分馈电,实现微带贴片天线的圆极化辐射,增加方向图的旋转对称性。用该天线作为阵列单元,采用顺序旋转布阵技术组成一个3×4阵列,有效地改善了阵列天线的增益扫描特性。研究了该阵列天线波束扫描时的辐射特性和极化特性。仿真结果表明:阵列天线在中心工作频率处能实现俯仰60°的扫描,在扫描范围内增益大于11.9 d Bi,轴比小于2 d B。     

四臂螺旋天线设计与实现研究

文章介绍了四臂螺旋天线的结构特性和几何尺寸、螺旋模式;设计了一种小型四臂螺旋天线,采用巴伦平衡结构的自相移馈电方式馈电,将螺旋臂印刷在高介电常数陶瓷柱上,减小了天线的体积,通过仿真分析,该种天线具有良好的宽波束和圆极化特性。     

一种改进的圆极化三角形口径耦合贴片天线

提出并设计了一种改进的宽带圆极化三角形口径耦合微带贴片天线。该天线由L形微带线、三角形缝隙和三角形贴片组成。通过L形微带线形成圆极化,三角形缝隙和三角形贴片形成单向辐射,缝隙和贴片印刷在不同的介质基片上以提高天线增益并缩减口径尺寸,同时在三角形贴片上切去一个角改善天线的圆极化特性。用HFSS设计了一款L波段的口径耦合贴片天线。仿真结果表明,天线的阻抗带宽26.5%,圆极化带宽22.5%,平均增益7.7 d B。     

卫星导航终端的小型化方形四臂缝隙螺旋天线

设计了一种卫星导航终端的小型化四臂缝隙螺旋天线。天线为方形柱状结构,四条缝隙螺旋臂印制在介质基板外表面,馈电网络印制于介质基板内表面进行耦合馈电;馈电网络为弯折的微带线结构,并延伸至天线底部实现同轴馈电。天线尺寸为23.6 mm×23.6 mm×53.0 mm,实测结果表明,|S11 |≤-10 dB 的阻抗带宽为7.63%(1.512~1.632 GHz),轴比≤3 dB 的圆极化带宽为3.35% (1.556~1.609 GHz),在北斗B1频段中心频率(1.561 GHz)和GPS L1 频段中心频率(1.575 GHz)处增益分别达到4.31 dBi 和4.84 dBi。该天线采用缝隙螺旋结构,并通过简易的馈电网络耦合馈电实现螺旋天线的圆极化,结构小巧简单,适合批量生产,可应用于卫星导航系统终端设备。     

S波段宽波束圆极化天线设计

随着现代无线通信系统的发展,对天线也提出了一些特定的更高的要求。设计了一种S频段宽波束圆极化微带天线,以满足系统对天线宽波束辐射的要求;在天线的辐射贴片上附加寄生贴片以展宽天线带宽,并利用金属化过孔以实现单边短路,达到天线小型化设计的目的;利用旋转结构结合多点馈电技术以获得微带天线宽波束圆极化辐射。通过理论分析并利用三维电磁仿真软件HFSS对天线进行了仿真设计和实验,仿真结果与测试结果吻合良好。     

UHF RFID阅读器宽波束圆极化天线设计

为扩大射频识别系统中阅读器天线的有效识别范围,设计了一款宽波束圆极化微带天线。天线采用输出相位差为90°的功分器正交馈电激励起圆极化波,并结合圆形金属电容片耦合馈电技术、贴片表面开槽技术以及使用折叠导体墙结构。整体尺寸为113 mm×113 mm×13.27 mm,圆极化轴比带宽以及阻抗带宽均覆盖840~960 MHz,天线3 d B波瓣宽度为104°,增益值为4.8 d Bi。     

一种新型宽带圆极化介质谐振器天线设计与实现*

设计了一种宽带圆极化介质谐振器天线,为一种鼠笼形的宽带一分四90毅相移功分微带馈电网络,采用缝隙耦合对介质谐振器顺序旋转耦合馈电。天线结构紧凑、加工简单,仿真和实测结果吻合良好,其阻抗带宽和低于3dB的轴比带宽重叠部分在1.09 GHz-1.83GHz、为50.7%。增益大于3dB 及轴比小于3dB 的波束宽度均达到90°。天线工作频率覆盖四大导航系统,包括中国的北斗系统、美国的GPS 系统、欧洲的伽利略(GALTLEO)系统和俄罗斯的格洛纳斯(GLONASS )系统的频段,天线可应用于全球卫星导航定位系统和无线宽带通信系统中。     

宽频带圆极化缝隙螺旋天线的设计

研究了一种宽阻抗带宽和宽圆极化轴比带宽的缝隙螺旋天线。天线印制在由FR4 介质基板构建的 方形柱状结构的内外表面,两组长短不同的缝隙螺旋臂印制在介质基板外表面并延伸至天线顶部;一条弯折的微带 线作为馈电网络印制在介质基板内表面,通过对各缝隙耦合馈电,实现天线宽阻抗带宽和轴比带宽。实测结果表 明:天线尺寸为0. 111λ0 ×0. 111λ0 ×0. 221λ0(λ0 为北斗B2 中心频率1. 207 GHz 对应的自由空间波长),S11 ≤ -10 dB 的阻抗带宽为1. 158~1. 778 GHz,轴比≤3 dB 的圆极化带宽为1. 133~1. 918 GHz。该天线采用缝隙螺旋结构,通过 简易的馈电网络实现天线小型化和宽频带特性,在卫星导航系统中具有较好的应用前景。     

新型双圆极化单脉冲天线

介绍了一种新型基于微带缝隙耦合的双圆极化单脉冲天线。天线工作在2.2GHz,首先设计了2×2双圆极化阵列,并且通过对每个辐射单元旋转实现对交叉极化的抑制。再次,根据单脉冲天线特性设计了4×4阵列,同样为了抑制交叉极化,对馈电网络按照一定顺序进行了旋转,仿真结果表明交叉极化达到-65dB。最后根据整个阵列4个辐射象限的初始相位值,利用3分支电桥,设计了适合左旋和右旋圆极化"十"字形和差网络。经过实测,仿真结果与测试结果吻合较好,天线和波束增益为19.78dBi。     

一种新型宽波束圆极化微带天线的设计

设计了一种新型宽波束圆极化微带天线,该天线采用四探针馈电,馈电网络由威尔金森功分器和传输线移相器组成,使四个馈电探针的相位依次相差π/2,实现了右旋圆极化辐射。通过Ansoft HFSS仿真结果表明：该微带天线结构简单、极化纯度高、全向性能好、轴比小于3dB的圆极化带宽达到27.7%,高于一般的微带圆极化天线（轴比小于3dB带宽约为15%）。天线可以很好地满足GPS通信的技术要求,也可用于无线局域网。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.