ADC测试中INL与THD之间的关系

随着ADC测试技术的不断发展,码密度直方图技术以及采用正弦波输入的离散傅里叶变换(DFT)频域分析技术已经被广泛应用到ADC的仿真和测试分析中。相对于采用DFT进行频域分析获取ADC的动态性能的复杂性来说,采用码密度直方图的方法能简单地得到微分非线性(DNL)和积分非线性(INL)这两个静态性能指标。文章通过对一个10位ADC的行为级模型的仿真分析,阐述了总谐波失真(THD)与INL之间的内在联系,从而提出了通过对INL的测试来评估ADC的THD性能的方法,对今后ADC电路的测试和评估具有指导意义。     

某些非线性码的检错性能与VG限之关系

本文讨论了某些非线性码的检错性能与渐近ＶＧ限之关系，证明了不满足渐近ＶＧ限的非线性同距离分布码不是检错好码。     

一种可用于非线性码译码神经网络模型研究

本文提出一种非线性码神经网络译码方案。在纠错能力范围内对满足码距特性的一般非线性码以零错误概率进行纠错译码，并在检错能力范围内检错。文中具体描述了神经网络模型构造、学习算法及其理论依据。最后通过非线性等重码的译码实例表明此方案的有铲性及理论和应用价值。     

一种高速RS码与LDPC级联码编码器设计及硬件实现

提出了一种高速RS+QC-LDPC级联码编码器,介绍了这种级联码在FPGA平台上的实现方法,并对其性能进行了评估.重点介绍了RS+QC-LDPC级联码的各种优化技术,如基于二次扩展的QC-LDPC编码方法,采用交织技术,合理的搭配RS码和QC-LDPC码的码长、码率以达到最好的性能.经过优化,级联码编码器的吞吐量可以达到2.25G bit/ s以上.     

高精度模数转换器积分非线性建模与校正

积分非线性（INL）是影响ADC性能重要的参数。文中采用基于建立动态模型的方法,对高精度模数转换器芯片AD6645的积分非线性进行建模与校正,使得AD6645的性能得到大幅提升。测试结果表明,在30 MHz带宽范围内,ADC的无杂散动态范围、信纳比和有效位数等指标均得到提高。另外,此校准算法具有一定的普适性,有望适用于所有流水线ADC的校准。     

一种可用于非线性码译码神经网络模型研究

本文提出一种非线性码神经网络译码方案,在纠错能力范围内对满足码距特性的一般非线性码以零错误概率进行纠错译码,并在检错能力范围内检错。文中具体描述了神经网络模型构造、学习算法及其理论依据。最后通过非线性等重码的译码实例表明此方案的有效性及理论和应用价值。     

三种不同RZ码在40Gbit／s系统中传输性能比较

文章阐述了三种不同RZ码的产生方法,通过计算机仿真比较了三种RZ码在单波6×80km 40Gbit／s系统中的传输性能,结果表明RZ码的抗非线性能力都较强,但抗色散能力较差。比较而言,33％RZ在抗非线性和色散方面均较好。     

高速模数转换器的INL和DNL特性测试

近来,具有出色静态和动态特性的高性能模数转换器（ADC）层出不穷,本文将聚焦于有关ADC两个重要的精度参数的测量技术;积分非线性（ INL）和微分非线性（DNL）,对应用于通信和高速数据采集的高性能数据转换器来讲,尽管INL和DNL还不算是最重要的电特性参数,但在高分辨率成像应用中却具有重要意义。     

功放非线性对直扩卫星通信伪码捕获的影响

推导了在非线性放大条件下,DS—CDMA卫星通信系统下行链路PN码捕获判决变量的解析表达式,针对功放非线性失真对捕获性能的影响做了量化分析。理论分析结果表明,非线性失真会导致检测概率降低,平均捕获时间增加。研究结果对功率放大器的选型、功率余量的保留、链路预算设计等具有重要参考价值。     

关于非线性码的格子复杂度

研究了非线性码的格子复杂度.给出了非线性码的维数/长度轮廓的定义,并利用这一定义,将Forney所给出的线性码格子复杂度的新下界推广到了非线性码上去.然后推出了非线性码的Berger-Be′ery上界.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.