孔径型超分辨近场结构光盘的电磁场分析

采用三维时域有限差分（3D-FDTD）方法建立了孔径（TA）型超分辨近场结构（super-RENS）光盘的电磁场计算模型。计算中,用矢量基模高斯光束模型作为聚焦光束的近似,用Lorentz模型描述掩膜介质Sb和反射层介质A1在光频段的色散特性。对写入和读出过程中的电场分布进行了理论分析,并与普通CD-R／W光盘进行了比较。理论计算结果很好地说明了TA型super-RENS光盘写入和读出时的电场分布特性,从本质上解释了超分辨率读写的机制,得到了和实验一致的结果。     

CD-R记录原理

通过对CD-R技术的研究,从其规格、记录等内容简要介绍了CD-R的介质特性、记录原理和记录方法,提供一些有效的实际经验。     

自制全色超细颗粒卤化银乳剂及其反射全息特性

实验制备了颗粒平均尺寸为10mm且具有一定的红、绿和蓝色灵敏度的超细颗粒卤化银乳剂，对影响颗粒尺寸和光谱灵敏度的若干制备条件进行了讨论；实验研究了用该乳剂记录的反射全息光栅的衍射特性。实验结果表明，用改进了的AAC显影液和R-10漂白液处理，当用红光(633nm)或绿色(515nm)记录时，反射全息光栅的衍射效率可达55％，需要的曝光量分别为1．8mJ／cm^2、2．2mJ／cm^2；当用蓝光(458nm)记录且曝光量为3．3mJ／cm^2时，衍射效率达50%。     

ACER CD-RW可读写光盘刻录机的安装及使用

<正> 过去,我们用软盘备份数据和文件,而时至今日,随着多媒体技术的发展,文件量大大增加,软盘已经显得力不从心,用CD-R或CD-RW作存储介质越来越有必要了。 CD-R是只能一次性刻录的光盘,能容纳大约74分钟的音乐资料或650M的数据,它适用于数据文件和高保真音乐的存储。CD-RW则是用于数字式数据存储的、可多次擦写的盘片。两种盘片在使用上的共同点是都可读、可写,不同之处是:(1)CD-RW上的信息被删除后,还可以重新写入信息,而CD-R只能一次性刻录,信息不能被删除;(2)CD-R上的信     

纳米Si薄膜生长及其Monte-Carlo模拟

在玻璃衬底到靶的不同水平距离W (0.5、0.8和1.3 cm)条件下,使用脉冲激光沉积(PLD)方法分别制备了纳米Si薄膜。扫描电子显微镜(SEM)结果显示,在三种样品上形成的纳米Si颗粒尺寸会随W的增加而增大。为了解释该现象,使用Monte-Carlo方法模拟了薄膜生长。对粒子相互作用范围α和最大行走步长进行实验和筛选,当α取2时,随着粒子在衬底上最大行走步长的增大,薄膜生长方式从分散生长转化为簇状生长。仿真结果表明粒子岛的平均尺寸呈逐渐增大趋势,这与实验结果具有良好的一致性。因此,随着W的增加,Si原子落到衬底上时更大的初始动能是导致纳米Si颗粒尺寸增大的主要原因。     

离轴数字全息记录条件的研究

用振幅全息和菲涅耳衍射理论,分析离轴数字全息记录系统结构参数对数字全息再现的影响,并进行相应的实验验证。理论分析和实验研究结果都表明,如果记录物体和CCD的尺寸固定,记录物体和CCD之间的记录距离将直接影响数字全息再现像的分离状况和系统的分辨率,在保证再现像分离的前提下,缩短物体和CCD之间的距离将有利于数字全息再现像分辨率的提高。     

非晶Fe73.5Cu1Nb3Si13.5B9合金的激光纳米晶化研究

在相同激光扫描速度(20mm／s)和不同激光功率(150W，200W，250W，300W)工艺条件下，利用CO2激光对铁磁Fe73．5Cu1Nb3Si13．5B9非晶带进行了辐照处理，诱导非晶带样品发生纳米晶化。应用穆斯堡尔(Mossbauer)谱(MS)、透射电镜(TEM)和X射线衍射(XRD)对实验样品的晶化工艺、纳米晶相的组织结构、晶化量和纳米晶化机理等进行了研究。结果表明，晶化析出相是α-Fe(Si)单相固溶体，具有4种超精细结构；其晶粒尺寸约为10～20nm；纳米晶均匀分布在非晶基体上，形成非晶相与纳米晶化相的双相组织结构。随着激光功率的增加，纳米晶化量随着增加，可通过控制激光处理工艺参量，来实现纳米晶化量的控制。     

偶氮染料掺杂薄膜光记录性能研究

利用旋涂法 (Spin Coating)制备了新的含氮原子的杂环偶氮染料掺杂高分子聚甲基丙烯酸甲酯 (PMMA)薄膜。室温下测试了该偶氮染料在溶液和薄膜态的吸收光谱和薄膜态的反射光谱。研究了薄膜的光谱性质和短波长光记录性能。该薄膜在 4 0 0～ 550nm波长范围内具有强的吸收和反射光谱。短波长光盘静态测试结果表明 ,用低功率Ar 激光 (514 5nm)写入时 ,薄膜在写入前后的反射率变化较大。     

可录光盘(CD-R)的优化功率研究

采用旋涂工艺制备出了大面积的均匀花菁化合物染料薄膜和以其为记录介质的CD-R光盘。通过染料薄膜光谱的分析,发现该染料薄膜在780nm波长处有较大的吸收和较高的反射,多层膜的反射率达到75%,这符合橙皮书对反射率大于70%的要求。通过不同记录功率条件下对CD-R光盘的反射率和误码率等性能测试,确定了CD-R光盘的优化功率为7mW。     

一种高可靠的芯片代码升级方法

本文介绍了一种高可靠的芯片代码升级方法,应用于微控制单元（MCU）或片上系统（SoC）中。重点是在快闪记忆体（flash）中划分专门的状态记录区域同步记录代码升级的状态信息,作用是当代码升级发生异常终止时,flash将实时状态信息写入状态记录区域中。当升级恢复时,系统读取状态记录区域中信息,延续上次失败处继续升级,以此方法提升代码升级效率、提高代码升级可靠性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.