超热电子能谱分布各向异性的实验研究

报道了100 TW超短脉冲钛宝石激光装置上飞秒激光-固体靶相互作用中超热电子的能谱测量,获得了各向异性分布的超热电子能谱.靶前激光反射方向超热电子能谱和靶前法线方向超热电子能谱类似,呈单温类Maxwell分布;而靶后激光传播方向超热电子能谱出现高能尾部;靶前法线方向超热电子的产额比靶后激光传播方向和靶前激光反射方向要高得多.对以上形成的原因进行了分析.     

飞秒激光中镜向超热电子能谱的测量

报道了在20TW飞秒激光器上采用电子磁谱仪和γ射线谱仪探测器分别对激光-固体靶相互作用镜向产生的超热电子的能谱及其韧致辐射谱进行的测量。能谱测量结果显示：超热电子能谱呈类麦克斯韦分布,拟合的温度约为154keV,这与已知的温度定标率较好地吻合;韧致辐射谱拟合的温度约为141keV,如果考虑到电子的碰撞效应,二者的测量结果是一致的。这是由于几种加热机制共同作用的结果,其中占主导地位的加热机制是反射激光对电子的加热。     

超强脉冲激光辐照固体靶背表面的光辐射

在超强脉冲激光与固体靶相互作用中,利用光学CCD相机和光学多道分析仪(OMA),分别在固体薄膜靶背表面法线方向测量了光辐射积分成像图案和光谱。测量结果显示,光辐射空间分布图案呈圆环状,而辐射区域有发散角、有光强分布,包含多种辐射成分;光辐射光谱在800nm附近出现尖峰,是激光的基频(ω0)波,这一现象归因于超热电子束在输运的过程中产生的微束团而引起的相干渡越辐射(CTR);如果考虑超热电子的产生和加热机制,共振吸收和真空加热对超热电子都有贡献,其中占主导地位的加热机制则是共振吸收对电子的加热。     

强场物理中超热电子的产生及输运

在100TW超短脉冲钛宝石激光装置上完成了飞秒激光-固体靶相互作用中超热电子的产生及输运特性的实验研究。获得了超热电子的能谱、产额、注量和总能量。结果表明,随着功率密度的增加,靶前法线方向的超热电子更容易产生;超热电子的注量和总能量随靶厚度的增加而减少。超热电子约80%的能量主要沉积在靶内的前10μm,分析表明,这主要是静电场的影响所致。     

飞秒激光与固体靶相互作用中背表面的渡越辐射

在飞秒激光与固体靶相互作用中,利用光学CCD相机和光学多道分析仪(OMA),分别在固体薄膜靶背表面法线方向测量了渡越辐射(TR)积分成像图案和渡越辐射光谱.测量结果显示,渡越辐射光斑呈现圆盘状结构,在圆盘中明亮而强的光信号呈局部化分布,并且有分离的光斑出现.该现象表明,超热电子在输运过程中存在成丝效应,引起严重的不稳定性;渡越辐射光谱在800 nm附近出现了尖峰,是基频波(ω0),并且光谱向红光方向移动;基频波产生的原因归结于超热电子束在传输过程中产生的微束团而引起的相干渡越辐射(CTR);光谱红移的原因是由于等离子体临界面的迅速膨胀所致;渡越辐射光强随靶厚度的增加而减小.     

强场物理中超热电子能量沉积特性的实验研究

报道了在100 Tw超短脉冲掺钛蓝宝石激光装置上,完成的飞秒激光-固体靶相互作用中超热电子的能量沉积实验,获得了靶后激光传播方向超热电子的能谱、产额、注量和总能量.结果表明,超热电子的注量和总能量随靶厚的增加而减少,超热电子约80%的能量主要沉积在靶内的前10μm,分析其原因是由于静电场的影响所致.     

飞秒激光作用下高能离子的产生与加速

为了探索飞秒激光与固体靶相互作用中高能离子的 产生和加速机制,在超短超强激光装置 “SILEX-I”上进行了超强激光与平面薄膜Cu靶的相互作用中高能离子能谱分布的实验研究 。实验采用固 体核径迹探测器CR39和Thomson离子谱仪相结合的方式,在固体靶背表面法线方向测量了质 子和C离子能 量分布和产额。实验结果表明,实验观察到了质子和C4＋、C3＋、C2＋ 和C¹⁺离子信号;离子沿着靶背法线方 向发射,离子在一定能量处出现截断;质子和C4＋、C3＋、C2＋及C 1+离子的截止能分别是1221941keV、 1899、624、422keV;随着C离子电荷数增加, 产额也随着增加;质子的产额远远高于C离子。经分 析,高能离子的产生和加速是多种作用机制共同作用的结果,其中静电场中的靶后鞘层加速 (TNSA)机制则占主导地位。     

毫秒激光致固体靶材熔融喷溅的比较实验研究

为了研究毫秒激光致硅靶的熔融喷溅机理,采用阴影法,通过高速CCD获得了毫秒激光与固体靶材（硅靶和铝靶）相互作用的序列阴影图,研究了毫秒激光致固体靶材的融熔喷溅过程。实验上对比了毫秒激光致硅靶和铝靶熔融喷溅过程的不同,并对毫秒激光致固体熔融喷溅形成的机制进行了讨论。根据两种靶材融熔喷溅机理不同,解释了两种靶材融熔喷溅物的形貌、喷溅角度、喷溅物分布和喷溅物亮度不同的原因。结果表明,毫秒激光对两种靶材均能产生气化和熔融喷溅过程,但气化强度和熔融喷溅物的形态、亮度均不相同;激光作用硅靶时,作用区域所产生的气化现象不明显,熔融喷溅物呈液滴状,其亮度强于背景光,熔融喷溅方向与靶材前表面法线所成角的最大值为45°,熔融喷溅物分布在其间;而激光作用铝靶时,作用区域的铝靶所产生的气化现象更加明显,熔融喷溅物呈线状不透明流体,其亮度低于背景光,熔融喷溅方向与靶材前表面法线所成角度为20°,熔融喷溅物分布在熔融喷溅方向所在的直线周围。该研究对激光加工技术是有帮助的。     

飞秒激光诱发的医用质子束特性的实验研究

为了探索飞秒脉冲激光与固体靶相互作用中医用质子束特性,在超短超强激光装置"SILEX-I"上进行了医用高能质子束特性实验研究.实验利用HD810辐射变色膜片(RCF)、CR39核径迹探测器和Thomson离子谱仪分别在固体靶背表面法线方向测量了质子束的空间分布、束密度、产额和能谱.实验结果表明:质子束沿着靶背法线方向发...     

纳秒激光耦合金属靶辐射电磁脉冲的实验研究

为了研究电磁脉冲(EMP)强度和分布与激光参量、靶体材料、结构等之间的关系,采用靶室内部的超小B-dot天线对强激光打靶过程中产生的电磁脉冲进行了测量,分析了不同辐射方位的脉冲强度,同时探讨了靶体支撑杆为绝缘体和导体两种情况下的电磁辐射行为。结果表明,不同方向和不同靶杆测得的电磁脉冲明显不同,如在法线方向的电磁辐射达到20V,导电靶杆最大达到22V的辐射,说明强激光打靶诱导的EMP具有很强的极化方向,并且在导体靶杆情况下,能够产生更强的电磁辐射。该研究有助于揭示激光打靶产生的EMP在靶室内部的传输极化特性以及其强度与靶杆导电性的关系。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.