KGD技术发展及其应用

裸芯片在HIC和MCM应用领域有着广泛的市场，其质量和可靠性保证一直受关注。本文论述了已知好芯片（KGD）保证的技术要求、方法、发展现状、国内KGD技术发展机遇与挑战，介绍了国内KGD可靠性保障技术研究情况及已形成裸芯片测试、老化筛选和评价技术的能力。     

星载高可靠裸芯片设计*

通过研究裸芯片的可靠性保证技术,提出了集成的已知良好芯片(KGD鄄确优裸片)的可靠性保证指南,并制定了完善的裸芯片设计、生产、过程控制和可靠性评估等技术流程。文章确定了KGD 的规范线,作为裸芯片可靠性测试的检验标准。根据KGD 规范线对裸芯片进行全频测试,并进行3MHz 老化试验。通过试验,可以确保KGD 的可靠性指标达到IC 封装的要求,最终实现使用裸芯片的星载电子装备小型化、轻量化、高可靠、多功能和低成本。     

国内第一条KGD可靠性保障试验、生产线在信息产业部电子五所建成

信息产业部电子第五研究所通过对国外技术的引进、消化和提升,在国内建立了第一条裸芯片测试、老化筛选和评价的KGD(Known Good Die)可靠性保障试验和生产线。     

裸芯片老化技术评价

老化可以筛选出裸芯片的潜在缺陷并因此改善产品的外在质量与可靠性.同时,老化也是非常耗时与耗费人力的.如果对产品的可靠性水平要求较低,要想低成本获得已知良好芯片(KGD),一般是不采用老化程序,但如果想获得高可靠KGD,一定程度的老化是必不可少的.本文将介绍老化的三种通用方法并进行了比较分析.     

KGD技术发展与挑战

军用和民用电子系统中模块化和小型化发展的迫切需求使裸芯片在国内有着广泛的用途和市场，尤其是在军用HIC和MCM应用领域，裸芯片质量和可靠性保证一直是人们关注的热点，本文论述了国外KGD技术发展现状，以及国内发展KGD技术面临的机遇与挑战，论述了已知良好芯片（KGD）保证的主要技术要求，重点介绍了KGD夹具技术和工艺流程，为国内KGD技术的发展提供了技术指导。     

功率裸芯片的质量与可靠性保证方法

论述了常规裸芯片质量与可靠性保证的标准和技术,针对功率器件裸芯片,提出了高性能和高可靠性设计、制造工艺保障、验证筛选等质量与可靠性保证方法和技术途径;讨论了采用临时封装夹具技术,对功率裸芯片进行热敏参数筛选、结温控制老化筛选、高温高压反偏筛选等,最终实现对功率裸芯片100%的筛选,满足MCM和HIC对功率裸芯片的质量与可靠性要求。     

确好芯片商业化的关键问题

基于老化筛选技术的确好芯片KGD是现行多芯片封装结构中的关键芯片,具有封装成本低、可靠性高、体积小、易封装集成等优点,其应用前景广泛,如多芯片组件、多芯片封装、系统封装、功率系统封装、微系统封装、堆叠封装、混合集成电路等。文章对KGD技术做了分类总结,综述了近几年KGD技术的研发进展,指出KGD进一步发展的商业化关键问题。     

裸芯片封装技术的发展与挑战

随着IC制造技术的发展,传统的封装形式已经不能够满足集成电路对于高性能、高集成度、高可靠性的要求。裸芯片由于其本身具有的特点而被广泛应用于HIC/MCM等新型的封装形式中。文章的目的在于分析使用裸芯片所带来的技术优势和存在的一些不足之处,使得人们能够更加客观地看待一种新的技术,并且扬长避短地利用好它。一方面裸芯片的引入能够提高系统集成度和速度,这是裸芯片应用技术发展的必然性;另一方面针对裸芯片应用技术存在的问题,文章着重介绍了两种解决方法,即通过发展KGD技术和改进工艺的方法来提高裸芯片的质量和可靠性。     

功率裸芯片的测试与老化筛选技术

由于存在高温度、大电流等问题,传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片.介绍了采用临时封装夹具来测试与老化筛选功率裸芯片的技术,并根据功率裸芯片的实际情况,阐述了测试与筛选功率裸芯片的方法.     

裸芯片的IDDQ测试筛选方法研究

IDDQ测试在裸芯片的测试筛选中非常有用，为了获得更高质量与可靠性的产品，许多公司在CMOS生产线中引入了IDDQ测试筛选技术，现在IDDQ测试筛选技术已经作为保证芯片可靠性的重要手段。本文介绍了IDDQ测试筛选技术的重要概念以及其在保证裸芯片可靠性方面的重要作用，并对深亚微米器件中的IDDQ测试筛选方法做了重点介绍。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.