Keystone变换实现方法研究

在传统PD雷达里,当相干积累时间较长或信号带宽很大、目标运动速度很高时,回波会出现越距离单元走动,从而影响雷达探测目标的性能.Keystone变换是校正脉冲回波距离走动的常用方法.本文详细研究了Keystone变换的三种常用实现方法,对它们的运算量作了比较,指出Chirp-Z变换能较好地满足系统实时性的要求.仿真分析和...     

Keystone变换实现方法研究

在传统PD雷达中,当相干积累时间较长或信号带宽很大,目标运动速度很高时,回波会出现越距离单元走动,从而影响雷达探测目标的性能。Keystone变换是校正脉冲回波距离走动的常用方法。在此研究了Keystone变换的3种常用实现方法,通过仿真分析验证了算法的有效性,找出了低复杂度算法,对工程实现具有一定的参考意义。     

一种多载频MIMO雷达高速运动目标多维参数估计方法

 多载频MIMO雷达中,高速运动目标回波信号经通道分离后各通道的距离和多普勒频率均不在同一分辨单元,无法利用传统的超分辨算法对目标距离、角度等参数进行估计.本文根据目标回波特点提出一种基于级联Keystone变换的高速运动目标参数估计方法.该方法先在快时间维利用Keystone变换校正距离走动,再在慢时间维进行Keystone变换校正多普勒走动,最后用MUSIC算法进行距离、方位和俯仰等参数估计.仿真结果表明了所提方法的可行性和有效性.     

基于分段伪Keystone变换的快速旋转目标检测

 对于高距离分辨雷达,快速复杂运动目标在相参积累时间内出现的越距离单元走动给检测与识别带来极大的困难.本文针对快速旋转目标越距离单元走动的问题,提出了一种新的分段伪Keystone变换方法,对越距离单元走动进行校正.该方法首先将数据按一定准则分段,每段数据用伪Keystone变换处理,校正目标的越距离单元走动,然后将每段数据"拼接"在一起,完成整个观测时间的距离像对齐,并在此基础上实现积累时间内的相参检测.采用离散匹配傅里叶变换实现了该变换的快速算法,仿真实验验证了算法的有效性.     

基于最大图像清晰度的泛探雷达目标距离-多普勒走动校正

泛探雷达长时间的相干积累会增加目标二维走动，导致目标在距离多普勒域散焦，回波信噪比降低。有效的目标二维走动校正才能更好地体现泛探雷达的凝视特性，提升雷达目标检测性能。文中利用Keystone变换进行距离维走动校正，并建立多普勒维走动和图像清晰度的数学关系式，基于最大图像清晰度准则进行多普勒维的走动校正。该方法解决了凝视探测下的二维走动，提高目标在多普勒维的高分辨，同时提升了微弱目标检测能力。     

高速运动目标的越距离走动补偿

对于搜索转跟踪的雷达系统来说,跟踪模式下往往采用较大的带宽,并且如果目标运动速度过快,此时雷达回波会出现距离走动,从而影响到雷达的检测性能。Keystone变换是校正距离走动的常用方法,但须考虑速度模糊的情况。本文在雷达搜索模式下通过多重频法预先得到多普勒模糊度,并对跟踪模式下的回波信号进行处理来校正距离走动。仿真分析和实测数据处理结果表明了实现方法的有效性。     

机载雷达高速空中微弱动目标检测新方法

该文分析了机载雷达高速微弱空中动目标检测问题,指出直接对总回波数据进行Keystone变换校正存在多普勒模糊的动目标的距离走动时,会导致杂波脊展宽、杂波自由度增加从而降低STAP性能。为了解决这一问题,该文提出了一种新方法,该方法首先进行杂波抑制,然后利用Keystone变换校正目标距离走动,最后对目标距离走动校正后的数据进行常规空时2维波束形成实现目标积累,从而避免目标与杂波模糊数不同时,直接对回波数据进行Keystone变换校正动目标距离走动的同时影响杂波分布特性进而降低STAP性能的问题。仿真结果证明了该方法的有效性。     

一种径向匀加速目标包络徙动补偿新方法

雷达信号多脉冲长时间积累是提高雷达检测性能的重要手段。当雷达探测高速运动目标时,目标的径向加速度将引起二次距离走动,使雷达检测性能大大降低。针对此问题,提出一种消除距离走动二阶项的新方法。该方法首先对目标回波进行广义二阶Keystone变换,然后在慢时间域通过解线调的思路估计多普勒调频斜率,进而补偿多普勒高阶项,最后对补偿后信号再进行广义二阶Keystone变换,从而完全消除距离走动。仿真结果证明了该方法的有效性。     

基于Keystone变换的高速扩展目标检测

高速扩展目标在雷达多脉冲观测期间容易发生跨距离单元走动,由此导致常规的检测方法不能有效检测目标。针对这一问题,提出了一种基于Keystone变换的多脉冲扩展目标检测器,导出了相应的理论最优检测性能的解析表达式。在此基础上,对Keystone变换前后的目标检测性能以及基于Keystone变换的理论最优检测性能进行了比较研究,并分析了目标径向尺度、运动速度对Keystone变换的处理增益的影响。研究结果表明,对于强散射单元较少的高速目标,Keystone变换可以显著地改善目标的检测性能。     

一种天基预警雷达目标运动参数估计方法

天基预警雷达系统中,由于卫星平台和目标间存在高速径向运动,回波信号会产生距离徙动和多普勒走动,导致FFT相参积累增益降低,不利于微弱目标检测。为了提高检测性能,需要准确估计出目标的运动参数,并对回波信号进行运动补偿。首先建立了目标回波模型,分析了回波距离徙动和多普勒走动特性;其次利用Keystone变换校正回波距离徙动,并通过对多普勒模糊数的广义最大似然估计和MTD处理估计出目标的径向速度;然后对校正后的回波信号在方位向作延迟自相关处理,再利用FFT和Jacobson校正算法估计出目标的径向加速度;最后通过仿真实验验证了本文算法的有效性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.