混响室条件下线缆差模干扰辐射敏感度测试研究

为在混响室中对线缆差模干扰时的设备进行辐射敏感度测试,基于BLT方程,以常见的平行双导线为研究对象,分析了差模干扰时影响线缆方向性系数的因素,计算了线缆最大方向性系数的取值范围。然后根据前期研究中提出的测试方法,在混响室中和开阔场中进行试验,对计算结果进行了验证。试验结果表明,按照所得的最大方向性系数的计算值,可以确保混响室中辐射敏感度测试结果与开阔场相一致。     

复杂强电磁环境下系统辐射敏感度测试方法

系统地介绍了复杂强电磁辐射环境下系统级装备辐射敏感度测试的开阔场辐照法、低电场扫描法、混响室和模拟器法.分析了每种方法的原理、特点及适用范围:开阔场辐照法实现的技术难度较小,但对硬件要求高且容易受到外界环境场干扰;低电场扫描法技术上容易实现,对硬件要求低,但需要获取辐射场与线束电流的递推关系;(混响室可以用较小的功放产生较强的电磁场;)模拟器法可以产生场强极高的辐射环境,且具有试验空间大,场均匀性好等优点,高压脉冲源的研制、辐射天线的设计是该方法需要解决的关键技术.     

集成电路辐射敏感度混响室测试方法

介绍了混响室测试法的工作原理,并通过对GTEM法与混响室法的测试方法和测试结果的对比分析,表明混响室测试方法在1 GHz以上的高频范围测量集成电路(IC)的辐射敏感度更有优势.     

基于镜像对称的多馈源混响室扩展方法研究

提出了基于镜像对称的多馈源混响室扩展方法,给出了镜像对称扩展混响室改善工作区域场性能的原理,对单混响室及镜像混响室模型进行数值模拟计算,并设计了3组仿真实验从场强大小和场均匀性两个方面验证镜像混响室改善工作区域场性能的可行性.实验结果表明:单混响室镜像对称组合扩展后,在成倍扩展混响室及工作区域体积的同时,工作区域场强增大,场均匀性有所提高,解决了混响室体积扩展与场强减小以及变频场均匀性恶化的矛盾;通过发射天线同时馈入相同功率即多个小功放合成的方法解决了混响室高场强问题,降低对功率放大器的要求,进而降低混响室的测试成本.     

混响室条件下的辐射敏感度测试新方法

提出了一种基于统计平均思想的新的辐射敏感度测试方法,在大量实验的基础上验证其可靠性。两种工作模式分别采用位于测试区域内的接收天线在统计平均时间内接收环境场的平均值和所有步进位置测试结果的平均值作为最终测试结果。实验结果表明该方法测试过程简单,能够得到给定设备在任意敏感频点的辐射敏感度阈值,且具有良好的测试可重复性。将国际电工委员会(IEC)颁布的IEC61000-4-21第二版新标准与旧版本中关于步进模式最少独立采样位置的数量做了简要对比,通过实验数据验证了新版本的测试结果。     

双发射天线对混响室场性能影响的数值分析

提出了双天线激励混响室的方法,研究了双天线激励对混响室场性能的影响。分析了双天线改善混响室场均匀性的原理,对单天线激励下的混响室模型以及处于不同位置的双天线激励下的混响室模型进行了仿真计算,从场均匀性和场强两个方面研究了双天线对混响室场性能的影响,对双天线影响场强的机理进行了分析。研究表明:采用双天线激励改善了混响室工作区域的场均匀性;采用双天线可以降低对功率放大器的要求,降低大型混响室测试成本。最后对双发射天线在大型混响室中的应用进行了探讨和展望。     

混响室条件下线缆共模干扰临界辐射干扰场强测试研究

为在混响室中线缆共模干扰时的设备(EUT)进行临界辐射干扰场强测试,并确保与开阔场中测试结果一致,该文推导了线缆上共模电流满足的方程,将共模电流分解为相应的特征电流,计算了终端负载任意时线缆最大方向性系数的变化范围。以单导体传输线和同轴线为EUT,分别在混响室和开阔场中测试线缆的临界干扰场强,对计算结果进行了验证。结果表明:最大方向性系数的计算结果可以保证两种不同场地中测试结果的一致性,双线的共模干扰以及同轴线均可以等效为单线,且线缆弯曲对测试结果基本没有影响。     

西江牵引变电所电磁辐射研究

通过测量、分析和研究西江牵引变电所的电磁辐射,得到工频场强值、无线电干扰和场强距离衰减特性.在峰值检波模式下对9 kHz~1 GHz范围进行频率扫描,并对特定频点进行准峰值测量.为减小高压传输线对测量的影响,提出"沿对角线延长线"进行测量的新方案并用于测试.测量结果表明:周围环境中的电、磁场值小于变电所的发射限值,并且随距离增加呈现衰减趋势;工频场强值远小于国家标准中所规定的限值,符合人体健康标准.牵引变电所的电磁辐射低于发射限值,对人体及周边弱电设施的干扰很小.     

使用天线监测场强的混响室场均匀性校准方法

由于传统电场探头在某些环境下进行混响室校准具有局限性,提出使用天线进行混响室场均匀性校准的方法.对两种方法进行了论述,并进行了实地测试,数据处理后分别得到同一混响室条件下两种方法所得场均匀性标准差,经过相关系数运算,可得出两种方法具有较好的一致性的结论.     

高过载下军用电容的参数变化研究及失效分析

研究无线电引信中军用电容的高过载特性具有重要的意义,通过动态测试军用电容高过载下的特性,可以为系统地研究引信高过载特性提供可靠的依据。针对无线电引信中军用电容的工作环境,设计了军用电容在高过载条件下的动态测试试验方案并进行实验。最后,通过实验对高过载下军用电容的参数变化规律和失效模式进行了探讨,分析了电容参数变化及失效对引信的影响。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.