电压模式通用双二阶滤波器的新实现

本文提出了采用第二代电流传送器CC Ⅱ+/-构成的电压模式三输入、单输出多功能通用双二阶滤波电路。此电路通过选择不同的输入信号,可输出端得到电压模式二阶低通、高通、带通、陷波和全通五种滤波功能。每种滤波功能的滤波器的固有角频率ωp和品质因素Qp可实现正交调节,所有滤波器都具有低的无源灵敏度,计算机仿真结果表明了通用滤波器电路的正确性和可行性。     

基于电流传送器的电压模式双二阶滤波器

提出一种利用电流传送器设计的三输入单输出电压模式双二阶有源滤波器。通过选择不同的输入信号，在输出端得到二阶低通、高通、带通、带阻和全通五种滤波功能。该滤波器具有低的参数灵敏度和高输入、输出阻抗。模拟仿真结果表明所提方案是可行的。     

基于CDCTA和MOCCII的低功耗电流模式n阶滤波器

提出了一种电流模式多输入单输出的n阶滤波器。该电路包括一个电流差分级联跨导放大器(CDCTA)、一个多输出第二代电流传输器(MOCCII)和若干接地电容。无需改变电路内部的结构和器件数目,仅通过选择合适的输入电流信号就可实现任意阶的高通、低通、带通、带阻等滤波功能。该滤波器结构简单,输出阻抗高,易于集成,频带宽,功耗低,滤波性能优越。基于TSMC 0.18 μm CMOS工艺,采用Pspice对电路进行了仿真,结果证明了该滤波器理论分析的正确性。     

基于AOA的多功能二阶电流模式滤波器及仿真

以AOA电流模式多路输出积分器和AOA电流模多路输出比例电路为基础,设计了多功能二阶电流模式滤波器。该电路既可通过改变输入信号的作用点,从同一端口分别实现高通、带通和低通滤波,又可从同一端口输入信号,从不同端口同时实现高通、带通和低通滤波,真正实现了多功能滤波。计算机仿真证明该滤波器正确有效。     

电流模式n阶CCCII-C的多输入单输出滤波器设计

该文提出了一种结构简单的基于MCCCII的n阶多输入单输出电流模式滤波器电路。该滤波器电路包含n个有源器件、n个接地电容元件,无需接任何电阻元件,可以产生n阶低通、带通、高通、带阻及全通电流模式滤波。由于仅依靠改变外部输入电流信号的接入数目和方式来实现不同功能的滤波器,而电路内部结构及器件数目不变,所以该电路便于单片集成。文中对滤波器进行了PSPICE模拟。     

电流模式n阶CCCII-C的多输入单输出滤波器设计

该文提出了一种结构简单的基于MCCCII的n阶多输入单输出电流模式滤波器电路。该滤波器电路包含n个有源器件、n个接地电容元件,无需接任何电阻元件,可以产生n阶低通、带通、高通、带阻及全通电流模式滤波。由于仅依靠改变外部输入电流信号的接入数目和方式来实现不同功能的滤波器,而电路内部结构及器件数目不变,所以该电路便于单片集成。文中对滤波器进行了PSPICE模拟。     

单CCⅡ—电压模式双二阶滤波器

本文提出了一种采用电流传送器ＣＣⅡ－构成的电压模式三输入、单输出多功能二阶滤波器,该滤波器权用一个ＣＣⅡ－,二个电阻和二个电容。通过选择合适的输入信号,可在输出端得到低通、高通、带通、陷波和全通五种二阶滤波功能。该滤波器采用的无源元件和有源元件都是最少的。     

电流模式n阶CCCⅡ-C的多输入单输出滤波器设计

该文提出了一种结构简单的基于MCCCⅡ的n阶多输入单输出电流模式滤波器电路.该滤波器电路包含n个有源器件、n个接地电容元件,无需接任何电阻元件,可以产生n阶低通、带通、高通、带阻及全通电流模式滤波.由于仅依靠改变外部输入电流信号的接入数目和方式来实现不同功能的滤波器,而电路内部结构及器件数目不变,所以该电路便于单片集成.文中对滤波器进行了PSPICE模拟.     

基于CCCⅡ的双二阶电流模式多功能滤波器结构

提出了一种基于CCCⅡ的三输入单输出多功能电流模式双二阶滤波器结构.该滤波器结构简单,仅包含两个MOCCCⅡ,一个电阻和两个接地电容.该结构通过选择不同的输入端和输出端可以得到4个三输入单输出二阶多功能滤波电路,这4个电路均可以实现低通、高通、带通、带阻、全通滤波功能,并且角频率ω<,0>和品质因素Q可以实现独立可调,具有很低的无源和有源灵敏度.     

一种新的CCCII双二阶滤波器的实现

提出了一种连续时间电压模式CCCII双二阶滤波电路。通过适当选取输入电压,可实现二阶低通、带通、高通、带阻和全通5种滤波功能。对电路进行了PSPICE仿真,仿真结果表明该电路正确可行。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.