色散缓变光纤中孤子的相互作用

以非线性薛定谔方程为理论依据,应用对称傅立叶变换,采用MATLAB编程,对色散缓变光纤(DDF)中孤子间相互作用进行了理论模拟．并与普通光纤进行了比较。研究发现,当孤子问初始间距q0=3时,DDF中孤子间无相互作用,而普通光纤中存在强相互作用;DDF中直到q0=2时孤子间才出现明显的相互作用。结果表明,DDF中的传输比特率比普通光纤中的大;改变两孤子的初始相对相位或振幅,可以减小孤子间的相互作用。     

色散位移光纤中孤子色散管理传输特性研究

从描述光纤中孤子脉冲演化的非线性薛定谔(NLS)方程出发,得到了色散位移光纤中孤子色散管理传输的基本方程.利用对称分步傅里叶方法对方程进行数值求解,研究了色散管理孤子(DMS)在色散位移光纤中的演化特性.结果表明,孤子在周期性搭配具有相反色散性质的色散位移光纤中传输,无论是进行密集色散管理还是经典色散管理,都可以有效地抑制孤子间的相互作用,使得孤子的传输演化特性得到改善,从而提高信息传输的比特率.     

基于DDF的光脉冲绝热压缩和高阶孤子压缩

采用分步傅里叶数值计算方法研究了不同光纤长度、不同色散剖面曲线的色散渐减光纤(DDF)中光脉冲压缩的规律,最后以线性DDF为例,研究了光纤长度和孤子阶数对DDF中高阶孤子压缩性能的影响.数值计算结果表明,基于DDF的光脉冲压缩可以获得低脉座和无频率啁啾的高质量超短光脉冲.特别地给出了光纤长度和色散剖面对脉冲压缩性能如压缩比、峰值功率和脉座等的影响,对DDF光脉冲压缩有实际的指导意义.     

色散管理和非线性管理控制光孤子群的传输

从描述光孤子传输的非线性薛定谔(NLS)方程出发,给出了色散管理和非线性管理的光孤子的传输方程,利用对称分步傅里叶方法对方程进行数值求解,模拟研究了色散管理和非线性管理控制光孤子在光纤中的传输演化特性。结果表明,只有色散管理控制光孤子群在光纤中的传输,随着传输距离增加,孤子间的相互作用逐渐加剧,如色散管理和非线性管理同时控制光孤子群在光纤中的传输,可极大地抑制孤子间的相互作用,且随着距离增加相邻孤子间的作用几乎不变,这一结果可应用于光孤子群远距离的传输。     

皮秒孤子色散管理传输特性研究

从描述光纤中孤子脉冲传输的非线性薛定谔(NLS)方程出发,利用对称分步傅里叶方法对方程进行数值求解,研究了常规光纤中皮秒孤子色散管理(DMS)的传输演化特性。结果表明,孤子在通过密集周期性搭配具有相反色散系数的常规光纤中传输,可以降低孤子间的相互作用,使得孤子的传输演化特性得到改善。最后指出,利用色散管理来对常规光纤中光孤子脉冲之间的相互作用加以拟制,从而提高信息传输的比特率,必须具有特殊的光纤制造工艺。     

利用光纤环激光器和色散搭配的孤子传输

对不同波长的光脉冲在由正负色散光纤的组成的光纤链中的传输特性进行了数值和实验研究。实验结果和数值分析表明，在相同的初始条件下，短距离传输时，采用平均色散为正常色散的光纤传输要优于孤子传输方式，长距离传输时，采用孤子传输要优于脉冲在平均色散为正常色散的非线性光纤中传输。在正负色散位移的光纤链中的孤子传输，有一最佳波长。     

基于DDF - NOLM 的高阶孤子脉冲压缩

基于色散渐减光纤的非线性光纤环境(DDF - NOLM) 能够有效压缩高阶孤子脉冲。 数值计算表明其具有更好的压缩质量、压缩比和能量利用率。     

光纤中三阶色散对类明孤子传输特性的影响

本文采用变分法，探讨了三阶色散存在时类明孤子在光纤中的传输特性，导出了类明孤子参数随传输距离的演化方程组，讨论了三阶色散对类明孤子传输特性的影响．     

超高速通信系统中非零色散位移光纤多孤子传输影响

运用分步Fourier算法求解非线性薛定谔方程,研究了非零色散光纤中三阶色散系数对孤子脉冲在光纤中传输的影响.结果表明,通过数值模拟,在三阶色散作用下,孤子在光传输中脉冲的能量、脉冲频移、脉冲宽度、中心位置都随传输距离呈现振荡式变化.与零色散光纤对比,分析了孤子间相互作用随传输距离变化的特性,证明在非零色散位移中孤子间距和增加二阶滤波器能有效保持信号稳定的传输;这对实现超远距离光纤传输,提高通信系统超高码率有一定实际意义.     

高阶色散和高阶非线性效应对准光孤子传输的影响

为了研究高阶色散和高阶非线性效应对其在普通光纤上传输的影响,用数值模拟的方法研究了三阶色散、自陡效应和脉冲内拉曼散射效应对准光孤子传输的影响.结果表明准光孤子在实际的普通光纤中传输时,三阶色散、自陡效应和脉冲内拉曼散射效应中,冲内拉曼效应对其传输产生的影响比较大,致使准光孤子在普通光纤上传输时脉冲不断展宽,脉冲峰值功率降低,不能长距离保持脉冲形状不变.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.