基于FM20L08铁电存储器的实时数据采集系统

铁电存储器以其易用、快速、非易失以及越来越大的存储容量吸引了很多电子工程师的关注。文中介绍了FM20L08铁存储器的主要特点以及FM20L08与单片机的连接及编程方法．同时给出了一款用铁电存储器保存数据的实时数据采集系统的设计方法。     

基于FM18L08的高速数据存储系统

FM18L08是Ramtron公司新近推出的一种新型铁电随机存储器。该存储器克服了EEPROM和Flash器件写入时间长、擦写次数少等缺点，而且价格也相对不高。文章介绍了FM18F08的主要特点和引脚功能，并在此基础上给出了基于FM18L08的高速数据存储系统的设计方案。同时给出了FM18L08存储器与单片机的接口连接电路。     

基于FRAM的海水深度记录仪

设计了一种以铁电存储器FM20L08为非易失性存储器,C8051F020为数据采集核心的海水深度自动测量仪.     

Ramtron发布可替代SRAM的1兆位铁电存储器(FRAM)

非易失性铁电存储器开发及供应商—Ramtron国际公司宣布推出兆位的铁电存储器产品—FM20L08。此型号的操作电压为3-volt、32-pinTSOP(thinsmallout-lineplastic)封装。FM20L08是Ramtron目前生产的容量最大的铁电存储器,可以对其进行无限次的读写操作。该型号是专门设计用来替换标准异步静态随机存储器的。同时,这个型号还特别适用电压多样或者电压会突然丢失的存储数据系统,如机顶盒、汽车远程信息处理以及工业应用等系统。作为对Ramtron现有并口铁电存储器型号重要补充,FM20L08在地址转换检测(ATD)方面可以与SRAM完全兼容,它允许…     

并行接口铁电存储器FM1808及其应用

RAMTRON公司生产的并行接口高性能铁电存储器FM1808是NV -SRAM的理想替代产品。文中介绍了FM1808的性能特点、引脚功能和工作原理 ,同时重点介绍了铁电存储器的应用特点及与其它类型存储器之间的应用差别 ,给出了FM1808的设计应用要点     

Ramtron可替代SRAM的1兆位铁电存储器

Ramtron国际公司（Ramtron International）宣布推出1兆位的铁电存储器产品——FM20L08。此型号操作电压为3伏，采用32引脚TSOP（薄型小尺寸封装）封装。FM20L08是Ramtron目前生产的容量最大的铁电存储器。该型号专门用来替换标准异步静态随机存储器（Standard asynchronous SRAM）。同时，该型号还特别适用电压多样或者电压可能突然消失的存储数据系统，如机顶盒、汽车远程信息处理以及工业应用等系统。     

串行FRAMFM25H20原理及其应用

介绍非易失性铁电存储器FM25H20的性能特点,内部结构和工作原理;给出单片机与FM25H20的写操作接口电路图.以及FM25H20的写操作流程图.归纳出任何一款8位数据总线宽度用于计算机系统时使用FM25H20的方法.从而实现大客量存储系统的扩展.     

可替代SRAM的1兆位铁电存储器

Ramtron国际公司宣布推出1兆位的铁电存储器产品——FM201．08该存储器的工作电压为3Y，采用32引脚TSOP封装，FM20L08是Ramtron目前生产的容量最大的铁电俘储器，可以对其进行尢限次的读写操作。该型号是专门设计用束替换标准异步静态随机存储器的（SRAM）。同时．这个型号还特别适用电压多样或者电压会突然丢失的存储数掂系统，如机顶盒、汽车远程信息处理及工业应用等系统。     

基于铁电存储器FM18L08的固态记录仪设计

采用了一种新型的铁电存储器，介绍了他与现有其他存储器的不同之处，并在此基础上开发了基于FM18L08的弹载测试装置，有针对性地给出了硬件和软件的设计细节和漉程图，经模拟试验证明，达到了预期的测试要求．     

FM3164在火灾自动报警系统中的应用

FM3164是RAMTRON公司推出的新一代非易失性铁电存储器,采用I2C总线,是集串行存储器、实时时钟、看门狗、复位电路、低电压检测等多种功能于一体的强大芯片.与其他串行存储器相比,FM3164具有没有写延时,读写次数可达上百亿次,速度快,功耗低等优点.主要介绍FM3164的组成原理和基本功能,并结合它在火灾自动报警系统的应用给出实际应用方法,实现报警过程中信息快速、准确的存储.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.