稀土元素Ce填充p型方钴矿化合物的热电性能

用高温熔融-退火扩散法合成了富Co组成的方钴矿化合物CeyFexCo4-xSb12(y=0～0.42),并对化合物的结构和热电性能进行了研究.结果表明:化合物的晶格常数随Ce填充量的增加而线性增加.霍尔系数RH为正值,CeyFexCo4-xSb12化合物表现p型传导.载流子浓度和电导率随Ce填充量的增加而减少.Seebeck系数随Ce填充量的增加及温度的上升而增加.晶格热导率在Ce填充量约为0.29时达到最小值,说明在Sb组成的二十面体空洞中部分填充时,Ce的扰动对声子的散射作用最强.在725K时,组成为Ce0.29Fe1.41Co2.59Sb12.32化合物的最大无量纲热电性能指数达到0.65.     

p型方钴矿化合物BayFeCo3Sb12的热电性能研究

用两步固相反应法合成了单相的p型BayFeCo3Sb12化合物,并系统地研究了Ba不同填充分数对方钴矿化合物热电性能的影响:化合物载流子浓度强烈地依赖于填充原子的填充分数,随Ba填充分数y的增加,载流子浓度及电导率降低;塞贝克系数随温度T的上升而增加,比CoSb3的塞贝克系数有一定程度的提高,尤其是在中温部分有大幅度提高,得到的最大塞贝克系数由CoSb3的107μVK-1提高到Ba1.0FeCo3Sb12的235μVK-1晶格热导率随Ba的填充分数y的增加而进一步下降,Ba08FeCo3Sb12甚至降到2.2 Wm1K1;Ba08FeCo3Sb12化合物显示最大热电性能指数,在850K左右其最大无量纲热电性能指数ZT值达0.75.     

Ni掺杂CoSb_3化合物的热电性能及机理研究

采用机械合金化结合冷等静压的方法制备了CoSb3和Co3.5Ni0.5Sb12化合物,并测量了其热电性能。利用基于密度泛函理论赝势平面波的方法对Ni掺杂前后的CoSb3的能带结构和态密度进行了计算,实验和理论计算结果表明:CoSb3的费密面位于导带和价带之间,其电阻率随温度的升高而降低,为非简并半导体;Co3.5Ni0.5Sb12的费密面进入导带,其电阻率随温度的升高而增大,为n型简并半导体;本实验条件下,Co3.5Ni0.5Sb12化合物的功率因子在550 K时出现最大值2 292.92μW/(m.K2),是未掺杂CoSb3化合物最大值的12倍。     

AgIn共掺杂(AgIn)xPb1-2xTe化合物的合成及热电传输性能

用高温熔融法合成了Ag和In共掺的单相n型(AgIn)xPb1-2xTe化合物,研究了(AgIn)掺杂量x对(Ag-In)xPb1-2xTe(x=0.01～0.05)物相组成及热电性能的影响.结果表明:掺杂量x≤0.04时得到单相四元化合物,x=0.05时样品中出现了组成为AgInTe2第二相;(AgIn)xPb1-2xTe化合物的Seebeck系数随着x增加而增大,电导率随着掺杂量x增加而降低;化合物的热导率随着掺杂量x增大而减小;当x=0.01时,(AgIn)xPb1-2xTe化合物的热电性能指数值最大,在800K时达到1.1.     

AgIn共掺杂(AgIn)xPb1-2xTe化合物的合成及热电传输性能

用高温熔融法合成了Ag和In共掺的单相n型（AgIn）x Pb1-2x Te化合物,研究了（AgIn）掺杂量x对（AgIn）x Pb1-2x Te（x=0.01～0.05）物相组成及热电性能的影响.结果表明：掺杂量x≤0.04时得到单相四元化合物,x=0.05时样品中出现了组成为AgInTe2第二相;（AgIn）x Pb 1-2x Te化合物的Seebeck系数随着x增加而增大,电导率随着掺杂量x增加而降低;化合物的热导率随着掺杂量x增大而减小;当x=0.01时,（AgIn） x Pb1-2x Te化合物的热电性能指数值最大,在800K时达到1.1.     

Yb_2O_3/CoSb_3的机械合金化制备

以Co、Sb、Yb粉体为原料,采用机械合金化(MA)和热压烧结法(HIP)制备Yb2O3/CoSb3复合热电材料,并测试了该体系的电输运性质和热扩散系数。结果表明:球磨40 h后,Co、Sb发生合金化生成了CoSb3和CoSb2化合物相;球磨后的粉末在高纯Ar气氛(体积分数>99.99%)保护下经过50 MPa压强、530℃温度下热压烧结(HIP)2 h后合金内部主要由CoSb3相组成,同时合金内部有大量Yb2O3氧化物弥散掺杂,Yb2O3/CoSb3体系电阻率和热扩散系数随温度升高而降低。     

制备工艺对新型热电材料制冷性能的影响

通过取点法得到了由Ingot法、BM法、S-MS法和Te-MS法制备的四种新型p型热电材料(Bi0.5Sb1.5)Te3的变物性参数拟合公式,分析了温度对不同方法制备的热电材料的影响,得到了热电材料无量纲优值与绝对温度的关系曲线.从热力学方面研究了制备工艺对基于新型热电材料的热电制冷器最大制冷系数的影响.结果表明:由Te-MS法制备的新型p型热电材料(Bi0.5Sb1.5)Te3具有最大的优值系数,基于该材料的热电制冷器最大制冷系数可达2.49,较其他三种方法制备的热电材料分别提升了 34.59％,37.57％和25.76％.     

铜掺杂量对钴酸钙热电性能的影响研究

采用sol-gel法制备了掺Cu的钴酸钙(Ca3Co4O9)热电材料,研究了Cu掺杂量对其物相、电导率σ、Seebeck系数S和功率因子P的影响。结果表明:随着Cu掺杂量的增加,试样中Ca3Co4O9的含量下降,但试样的电导率增加;试样的Seebeck系数和功率因子先增加后下降。试样(Ca0.90Cu0.10)3Co4O9在973 K时的功率因子最大,为15.3×10–4 W.m–1.K–2。     

磁控溅射法制备Bi2Te3热电薄膜的研究

Bi2Te3薄膜是室温下热电性能最好的热电材料,利用磁控溅射在长有一薄层SiO2的n型硅样品上制备Bi/Te多层复合薄膜,经后续退火处理生成Bi2Te3。通过分析Bi2Te3薄膜的生长和退火工艺,探讨Bi/Te中Te的原子数分数对薄膜热电性能的影响。采用XRD和SEM对薄膜的结构、形貌和成分进行分析,并测量不同条件下的Seebeck系数。薄膜Seebeck系数均为负数,表明所制备样品是n型半导体薄膜,且最大值达到-76.81μV.K-1;电阻率ρ随Te的原子数分数增大而增大,其趋势先缓慢后迅速。Bi2Te3薄膜的热电性能良好,Te的原子数分数是60.52%时,功率因子最大,为1.765×10-4W.K-2.m-1。     

电场激活压力辅助烧结对(Bi2Te3)0.2(Sb2Te3)0.8热电材料微观结构及热电性能的影响

采用电场激活压力辅助烧结（FAPAS）技术制备了(Bi2Te3)0.2(Sb2Te3)0.8热电材料,采用无电场、低电场强度和高电场强度三种烧结方式作为对比实验,研究了烧结过程中施加电场强度对(Bi2Te3)0.2(Sb2Te3)0.8热电材料微观结构和热电性能的影响。研究结果表明,在烧结过程中施加电场,可明显提高(Bi2Te3)0.2(Sb2Te3)0.8热电材料的电导率和Seebeck系数,从而提高其综合电功率因子;而采用大电场强度烧结则会使(Bi2Te3)0.2(Sb2Te3)0.8材料出现层状结构择优取向,在电性能相对较高的情况下亦使其热导率明显减低,从而获得较高ZT值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.