超宽带太阳能电磁吸收器优化设计研究

基于不同材料和尺寸的三光栅级联顶层结构设计 了一种太阳能超宽带吸收器。采用时域有限差分法FDTD数值 模拟了铬膜厚度、缓冲层折射率和厚度、吸收器单元周期及三光栅宽度比和高度比等结构设 计参数对共振吸收光谱带宽 和吸收率的影响规律。同时借助选取波长下的电磁场分布规律、结合局域表面等离子体共振 探究了宽光谱、高吸收率产 生的物理机制。仿真结果表明,材料和结构参数不同的三个单光栅级联可明显拓宽入射光的 吸收光谱带宽;优化吸收器 结构设计参数后,获得了横跨部分紫外光、全部可见光和部分红外波段的宽频带,高达2.2 μm的吸收谱宽,近1μm红外频 段的吸收率可达完美吸收;并且吸收器在较宽的入射角范围内依然能保持良好的吸收性能和 极化的敏感特性。本文所设 计的吸收器结构简单,尺寸小,易与芯片集成,可在光伏发电、太阳能热处理和光探测等方 面均具有潜在的应用前景。     

超高温金属纳米结构增强吸收特性的仿真研究

利用表面等离子体改变材料吸收光谱特性越来越受到关注。为了增强超高温金属纳米结构的吸收特性,设计了超高温金属-金属以及膜层-金属-金属表面等离子体周期纳米结构,仿真分析其在波长200~4 000 nm光谱范围内,不同参数对材料吸收谱特性的影响。仿真分析表明,不同参数的吸收光谱中均会出现吸收峰,且吸收率达93%以上。而介电材料、金属纳米结构的周期、尺寸和深度是影响吸收率的主要因素。同时,介电材料和周期还会对吸收峰出现的位置产生影响。该仿真结果为超高温表面等离子体材料的吸收特性应用的研究提供了理论基础。     

一种红外波段多波长吸收器优化设计

本文设计了一种石墨烯/交替光栅/铝(Al)底板结构红外波段电磁超材料多波长吸收器.利用时域有限差分法(FDTD)数值模拟了石墨烯层厚度和光栅结构参数对吸收光谱的影响规律.研究结果证明,基于FP腔共振和相消干涉形成的吸收光谱对石墨烯层厚度和光栅高度较敏感,即随着石墨烯层厚度增大或光栅高度降低,左边频迅速蓝移,伴随各干涉峰...     

基于哑铃型光栅宽带吸收器的优化设计

本文基于哑铃型光栅设计了基底/金膜/二氧化硅 /石墨烯/光栅五层结构近红外宽带吸收器。采用时 域有限差分法(FDTD)数值模拟了不同结构参数下吸收光谱带宽的变化规律,优化了结构设 计。结果证明,吸收器在近红外波段呈现完美吸收特性,且当二氧化硅层厚度为200 nm、哑铃型光栅函数取 0.2x²⁺0.07,厚 度为300 nm,周期在0.89 μm范围内,吸收谱带宽最大可达300 nm;同时在缓冲层 与光栅之间引入单层石墨烯可以明显增大吸收率。本结构吸收器在医药安全、宽带通信和隐 身技术等领域具有许多潜在的应用价值。     

电可调非致冷红外探测原理

传统的红外光谱探测技术能够提供丰富的光谱信息,应用广泛,但该技术同时也存在一定局限性,如很难同步实现探测器小型化和探测波段实时调节等方面的要求.提出了一种基于电可调表面等离子体谐振吸收的新型FET红外探测器结构.基于电磁场理论分析了结构参数对红外光学吸收的影响,并通过结构参数的优化使吸收结构对特定红外波段的吸收率达到90%以上.栅压变化时VOx热敏层中载流子的浓度分布和折射率均发生变化,显示该器件具有明显的电可调光谱吸收特性.借助于这种FET结构,非制冷红外探测器将具有片上可调光谱探测能力,同时具有易于阵列化特点,为微小型可配置光谱成像探测器件提供了一条思路.     

基于超材料的多频带可调谐太赫兹吸收器

设计了一种多频带可调谐的太赫兹超材料吸收器。在超材料吸收器的结构中,引入光敏半导体硅材料,设计特殊的顶层金属谐振器,分析开口长度、线宽、介质层厚度等参数尺寸对太赫兹超材料吸收器的吸收光谱特性影响。根据光照与光敏半导体硅电导率之间的关系,研究太赫兹超材料吸收器的频率调谐特性。仿真结果得到太赫兹波段的12个吸收频率调制,其中有10处吸收峰的吸收率超过90%近完美吸收,且有6处吸收率达到99%的完美吸收,而且吸收率调制深度和相对带宽分别达到85.9 %和85.5%,具有很强的可调谐特性。设计的光激励太赫兹超材料吸收器结构简单,具有多频带可调谐和完美吸收特性,扩大了吸收器的应用范围。     

离子束溅射宽带吸收薄膜设计与制备技术研究

Si薄膜在可见光和近红外波段具有一定的吸收特性,可用于宽带吸收薄膜的制备。采用离子束溅射技术,在熔融石英基底上制备了不同沉积工艺参数的Si薄膜,基于透、反射光谱和椭偏光谱的全光谱数值拟合法,计算了Si薄膜的光学常数,并研究了氧气、氮气流量对其光学特性的影响。选择Si和Ta2O5作为高折射率材料、SiO2作为低折射率,设计了吸收率为2%和10%的宽带（1 000~1 400 nm）吸收薄膜。采用离子束溅射沉积技术,在熔融石英基底上制备了宽带吸收薄膜,对于A=2%的宽带吸收光谱,在1 064、1 200、1 319 nm的吸收率分别为2.12%、2.15%和2.22%;对于A=10%的宽带吸收光谱,在1 064、1 200、1 319 nm的吸收率分别为9.71%、8.35%和9.07%。研究结果对于吸收测量仪、光谱测试仪等仪器的定标具有重要的作用。     

一种四通道吸收器优化设计研究

本文基于阻抗匹配原理和表面等离子体共振理论 ,设计了一种石墨烯-MIM结构-金属铝(Al)底板三层结构超材料吸收器。采用时域有限差分法FDTD研究和分析了吸收器的共振吸 收光谱,电磁场能量分布,并优化了设计结构。研究结果表明,该吸收器具有近红外波段四 个超窄带吸收峰;最大吸收率可达0.943,3dB带宽均为3.55 μm左右。吸收器顶层覆盖石墨烯 增强光吸收并激发表面等离子体波;随着石墨烯层厚度的增加,四通道吸收光谱整体右移, 但吸收率几乎不变;四个吸收峰峰位波长对MIM结构高度不敏感,伴随吸收率变化明显,当M IM结构高度为110 nm时,相邻三通道吸收率均达到最大值。这种多通 道、超窄带吸收器可为高精度传感、功能成像和三维存储等领域的应用提供有用参考。     

电可调非致冷红外探测原理

传统的红外光谱成像技术能够提供丰富的光谱信息,应用广泛,但该技术同时也存在一定局限性,如很难同步实现探测器小型化和探测波段实时调节等方面的要求。本文提出了一种基于电可调表面等离子体谐振吸收的新型红外探测器结构。基于电磁场理论分析了结构参数对红外光学吸收的影响,并通过结构参数的优化使吸收结构对特定红外波段的吸收率达到90%以上。分析了不同栅压下,VOx热敏层中载流子的浓度分布和折射率变化情况,结果显示这种器件具有显著的电可调红外光谱吸收特性。本文研究在非制冷微测辐射热计探测器上使用电可调功能,使之具有片上可调光谱探测能力,同时易于阵列化,为微小型可配置光谱成像探测器件提供了一条思路。     

高平坦度可调谐多通道吸收器的优化设计

为了提升多通道吸收器的平坦度和光谱特性的可调性,本文构建了一种硅基底/铝底板/银单缝/石墨烯/二氧化硅(SiO₂)介质层的五层结构多通道吸收器。不但吸收光谱特性易调谐,各通道平坦度也可提升到2.84 dB。基于电磁场时域有限差分法(finite-difference time-domain, FDTD)从理论上分析了结构设计尺寸对吸收光谱的影响规律,同时优化了设计结构。模拟结果证明,吸收器顶层设置SiO₂介质层和单缝内填充Au均可显著增大吸收通道的平坦度,同时通过调节顶层SiO₂或上层石墨烯的宽度,可有效调谐吸收光谱通道数、通道间隔和单通道带宽;尤其可通过改变石墨烯费米能级实施吸收频段和吸收率的需求选择,在生化检测、环境监测和智能传感等领域均具有较好的应用前景。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.