一种近似用于高发射率城市地表热红外等效发射率的方向性变异核驱动模型及其不确定性分析

地表热红外发射率(8~14 μm)的方向性变异为遥感地表温度的反演及应用引入了不确定性,这种问题在城市地表显得尤为突出。本文发展了一种近似用于高发射率城市地表热红外等效发射率的方向性变异(Urban Surface Emissivity Anisotropy, USEA)核驱动模型,并分析了具体应用时的不确定性,其中USEA用非垂直观测的发射率与垂直观测时的发射率之比定量表示。模型有两个基本假设：(1)白天,USEA具有热点效应,热点位置与太阳位置接近;(2)夜晚,USEA无明显热点效应,且主要与观测天顶角相关。该核驱动模型由各向同性核、多次散射核、以及温差核组成,其中各向同性核为常数1,多次散射核描述了USEA与观测天顶角的关系,温差核描述了USEA的热点效应。基于计算机模拟数据的模型评价结果表明,核驱动模型可以表达USEA的时空变化,但城市地表热惯量会导致模型的适用性降低。该核驱动模型在MODIS等传感器的方向性比辐射率数据上,具有一定的应用潜力。     

一种顾及表面间多次散射的热辐射方向性模型

利用辐射换热角系数描述了非同温异质表面间的多次散射效应,据此建立热辐射方向性模型,并对模型的数值计算进行了讨论.将模型应用于行结构目标,结合孔隙率模型模拟其方向亮温(Directional Brightness Tempera-ture,DBT)变化规律.结果表明,模拟得到的规律与地面观测结果具有较高的一致性,平均偏差在0.5 K以内.同时发现,多次散射效应增强了目标DBT,但对DBT的变化幅度又起平滑作用;目标组分的温差、几何结构、发射率均可导致DBT发生变化,温差越大,表面越凹,发射率越小,DBT随观测角度变化的程度越剧烈;模型可以解释热辐射中的"热点效应",认为"热点"的产生主要与组分温度空间分布有关.模型对于研究发射率方向性,城市热红外遥感反演及热红外邻近像元影响等问题可提供参考或思路.     

多角度热红外亮温值的模型拟合与应用

通过二向性反射率分布函数(BRDF)核驱动模型对黑河试验多角度热红外机载数据的拟合,证明了核驱动模型具有热红外波段的外延能力,确定了适用于多角度热红外数据的最佳核函数组合.在热辐射方向性核系数组合因子与地表温度(LST)构成的特征空间中构建、提取了多角度热红外干旱指数(MTDI).在黑河各试验区,MTDI和温度植被干旱...     

土壤中红外发射率提取算法研究

基于四步观测法,提出了一种土壤中红外发射率提取方法.该方法利用热红外的ISSTES算法获得土壤热红外的发射率光谱和高精度的土壤温度估值,并将得到的温度估值用于中红外的发射率提取,减少中红外待反演参数.形成多余观测,使用最小二乘方法求解土壤中红外的发射率.重点分析了仪器定标误差和辐射传输方程简化对中红外发射率提取的影响.最后,基于模拟数据给出了中红外部分波段发射率反演误差较大的原因.     

中红外双通道夜间数据地表温度反演方法

地表温度反演是红外定量遥感的核心内容之一.与热红外(8~14μm)数据相比,中红外(3~5μm)波谱区大气透过率更高、对发射率的敏感性更低,在温度反演方面具有独特的优势.引入热红外地表温度反演思路,发展了仅利用夜间中红外双通道数据的地表温度反演算法,分析了宽通道组合(3~4μm和4~5μm)和窄通道组合(3.929~3.989μm和4.020~4.080μm)模式下的温度反演精度以及模型对噪声和发射率的敏感性.结果表明,宽、窄两种通道组合模型的温度反演精度分别为~0.5 K和~0.3 K;噪声等效温差和地表发射率误差对窄通道组合模型的影响更大.     

光学载荷定标场比辐射率方向性模型构建

地表比辐射率方向性研究是国际热红外定量遥感研究领域的热点与难点,现有的热红外沙地比辐射率方向性模型存在先验参数较多、精度较低、适用性差等问题。论文基于5个伪不变定标场,即Algeria3_1km、Algeria5_1km、Libya1_1km、Mauritania1_1km及Mauritania2_1km,综合利用长时序极轨卫星载荷AQUA/MODIS与静止轨道卫星载荷MSG/SEVIRI多角度观测数据,经过载荷相互校准、大气纠正、影像数据时空匹配等处理,基于热红外辐射传输方程,获取0~65°观测天顶角范围内各研究区方向性比辐射率,建立公里级像元尺度比辐射率方向性模型,并对其进行了不确定度评估。结果表明：地表比辐射率随观测天顶角增大而降低,其方向性效应随波段中心波长的增加而减小,Algeria5_1km区域的方向性效应最小,Mauritania1_1km区域的方向性效应最强;各研究区比辐射率方向性模型不确定度均随观测天顶角的增大而增大,模型不确定度均优于3%。     

林地型伪装网热红外发射率取值分析

在晴朗无风的白天及夜间考察了不同发射率伪装网装饰布（热红外发射率从0.63~0.94)与樟树树冠的辐射温差,并参照可见光变形迷彩设计理论分析了林地型伪装网中间色斑块的发射率取值范围。实验表明,传统林地型伪装网在热红外波段不能满足昼夜与林地背景融合的要求。林地型伪装网要满足强日照下热红外伪装的要求,中间色斑块的发射率必须小于0.63;要满足夜间热红外伪装的要求,中间色斑块的发射率不小于0.83。综合采用发射率可变涂料、降低太阳能吸收率、增强网面对流换热等技术手段可改善林地型伪装网与背景的昼夜兼容能力。     

基于LRO卫星Diviner热红外发射率的尺度问题研究

尺度问题作为对地观测的主要挑战和遥感科学的核心问题,一直以来备受关注.国内外学者对这一问题进行了大量的基础理论研究和科学验证工作,探讨和解决了许多与遥感尺度相关的核心问题.当然,在遥感探测内容中,发射率和温度遥感中也存在明显的尺度问题.以往混合像元发射率尺度问题的研究往往集中于地球表面,幸运的是,月球为我们研究这一问题提供了绝佳的对象.同时,伴随着Diviner热辐射探测器月表测量数据的不断更新,混合像元中发射率尺度问题的具体研究及其定量描述逐渐变为可能.本文以月表Diviner热红外测量数据为基础,在充分研究和分析Diviner数据特征和发射率计算方法的前提下,以不同尺度下的Apollo 15登月区或者登月点热红外发射率为研究对象,依据混合像元发射率定义,分析和研究了混合像元中发射率的尺度转换和尺度效应两个问题,从发射率数值角度出发讨论和验证了尺度变换和尺度效应的一般规律,并给出定量描述,希望能够为尺度变换和尺度效应等问题的研究提供理论支持和实验依据.     

红外隐身涂层发射率预测模型

针对红外隐身涂层发射率受颜料形状和涂层微结构等参数影响的问题,建立了基于有效介质理论和Kubelka-Munk理论的红外隐身涂层发射率预测模型.采用了Maxwell-Garnett有效介质近似模型,以Al作为颜料粒子,计算得到了含有空气和球形Al粒子的涂层等效折射率与波长的关系.从电磁波与颜料相互作用的机理出发,对涂层结构材料内部的后向散射效应进行了研究,结合几何光学理论计算了涂层的散射系数和吸收系数,以ZnS作为颜料粒子,定量分析了颜料形状和微结构参数对涂层发射率的影响,得出了涂层发射率与颜料粒子半径、体积百分比、等效折射率的关系.计算结果表明:该模型对红外隐身涂层的制备具有一定的指导作用.     

一种顾及观测视场的行播作物热辐射方向性模型

热辐射方向性是热红外遥感反演和产品真实性检验中的关键问题之一。本文针对行播作物,构建了一个综合考虑光照植被/阴影植被、光照土壤/阴影土壤、植被-土壤多次散射和观测视场多影响因素的行播作物热辐射方向性模型,并详细分析模型精度以及模型对LAI、冠层结构等参数的敏感性。结果表明,本文模型不仅能够很好体现出行播结构热辐射特性和热点效应,而且适用于连续作物热辐射特性模拟;与现有FRA97模型和FovMod模型对比一致性良好,均方根误差分别为0.18 K和0.36 K。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.