红外空空导弹抗干扰性能评估指标体系研究

评估红外空空导弹抗干扰能力强弱的传统指标较为单一,多是利用综合抗干扰概率进行判定。针对该问题,建立了包含导弹总体、制导系统、导引头3个层次的抗干扰性能评估指标体系,实现抗干扰性能评估指标的分解,提高了对制导系统和导引头抗干扰性能的评估能力,提升了利用导引头、制导系统评估结果对导弹总体抗干扰性能进行预估的能力。     

基于主成分分析方法的光电系统抗干扰性能评估研究

基于主成分分析法开发了一种评估红外系统抗干扰性能的综合评价方法。针对红外系统,构建了能够体现其抗干扰性能的指标体系,利用主成分分析法,对不同红外系统的抗干扰性能做出了客观的评价。通过计算不同红外系统的综合得分、主成分得分,实现了不同系统抗干扰性能的综合排名,进而能够为红外系统的抗干扰性能评估提供重要参考依据。     

红外制导空空导弹抗干扰性能试验及评估研究

给出了一种红外空空导弹抗干扰试验和评估方法,解决了红外空空导弹抗干扰性能难于定量评估的问题。该方法通过详细规划导弹的抗干扰试验,采用贝努利方法得到导弹在数字仿真、半实物仿真和靶场飞行试验中的抗干扰试验数据,运用多层贝叶斯估计方法,得到导弹抗干扰概率计算模型。算例计算表明,该方法较传统评估方法等具有更高的可信度。     

红外成像导引系统抗干扰性能评估研究

为解决红外成像导引系统抗干扰性能难于定量评估问题,给出了一种新的评估指标体系。首先通过详细分析红外光学系统、调制器、探测器、图像处理系统、陀螺伺服系统的性能参数,得到红外导引系统在抗干扰过程中的固有性能指标;然后规划了在不同仿真条件下的抗干扰仿真实验,得到抗干扰识别算法概率和各种干扰因素的数据;最后采用层次分析法建立了红外成像导引系统抗干扰性能计算模型,并用算例进行了计算,结果表明该指标体系具有一定的实用性。     

基于DMD的动态红外场景生成系统

动态红外场景生成系统是检测红外导引头探测、跟踪和抗干扰性能的重要手段。以某型空空导弹光电对抗平台为应用对象,基于红外场景实测数据,利用Visual C＋＋6.0和Vega API开发了交互式红外图像生成软件,实时生成不同地域各种环境下目标和背景的红外图像,模拟真实场景在红外导引头入瞳处红外辐射分布。根据红外图像视频信号...     

红外空空导弹抗干扰性能验证方法研究

抗干扰性能是衡量红外空空导弹作战效能高低的重要指标之一,如何有效地进行测试与验证是当前研究的重点。提出了一系列包括静态验证,虚拟样机仿真,半实物仿真以及实物试验等完整的验证方法,可以全面考核红外空空导弹的抗干扰性能,其试验效果真实、有效。     

红外导弹抗干扰能力多维度评估方法

影响红外导弹抗干扰成败的因素错综复杂,因此红外导弹抗干扰能力评估一直是领域内公认的一个难题。根据红外导弹研制的经验,提炼总结出了一套系统的红外导弹抗干扰性能评估方法,可以从空域、时域、频域、能量域、信息域等5个维度对导弹的抗干扰性能进行评估,大幅增加了评估结果的置信度。通过弹道仿真计算,给出了典型算例不同维度的抗干扰性能曲线。从仿真结果看,该方法评估结果与实际导弹的抗干扰特性基本吻合。     

模糊层次法评估机载雷达抗干扰效能

为了评估机载雷达抗干扰效能,介绍了抗干扰性能特点,建立了抗干扰性能评估指标体系,利用层次分析法(AHP)计算了各品质因素的权重,用模糊数学理论建立了各指标因素的模糊隶属度函数,对机载雷达抗干扰效能进行了综合评估.该方法用精确的数学描述机载雷达系统抗干扰性能指标中的模糊性,为评判机载雷达抗干扰性能提供了一种新的方法.并对美军AN-APQ153和AN-APG69两种机载雷达抗干扰效能进行了模糊综合评估,实例分析结果表明该评估方法具有实用性,其评估方法可为机载雷达效能评估提供参考.     

卫星导航接收机抗干扰性能评估方法研究

卫星导航接收机的抗干扰是导航战研究的一项重要内容。合理的抗干扰性能评估方法是对接收机的抗干扰性能进行正确评估的基础,目前卫星导航接收机还没有建立统一的抗干扰性能评价方法。在吸取GPS系统抗干扰性能评估方法的合理性的基础上,提出一种在接收机输入端对抗干扰性能进行评估的方法,与传统的抗干扰性能评估方法相比,该方法更具有工程实际意义。     

用红外空空导弹攻击武装直升机的战术研究

围绕如何提高战斗机使用红外制导空空导弹攻击敌方武装直升机的作战效能问题,首先介绍了两种典型的红外空空导弹,其次对影响红外空空导弹作战使用的主要条件进行了分析,然后对武装直升机发动机的红外辐射特性进行了分析研究。最后,通过近距空战实例分析,研究得出了某型战斗机对在战区内活动的敌方武装直升机所采取的"战区游弋"空战战术和相关机载武器的使用方案。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.