共查询到20条相似文献,搜索用时 62 毫秒
1.
阐述了利用匹配光纤光栅闭环跟踪测量传感光纤光栅布拉格波长的方法.给出了基于高速数字信号处理器(DSP)的光纤光栅波长解调系统的实现方案,该方案利用一种特殊结构的悬臂梁和两个并联二次反射匹配解调光栅的方法来实现光纤布拉格光栅(FBG)传感器的高精度大范围应变传感解调,并通过特殊悬臂梁提高了解调光栅的敏感度;同时利用并联方式并选择两个合适的匹配光栅中心波长来增大可检测的应变范围,同时解决了双值问题。 相似文献
2.
3.
4.
5.
基于匹配解调方法的光纤光栅振动检测技术与实验研究 总被引:1,自引:0,他引:1
介绍了光纤光栅振动检测原理及优点,建立了光纤光栅加速度振动检测的力学模型,分析岩土、结构、建筑行业低频微振动监测的单点光栅匹配解调方法,利用反卷积方法进行传感光栅中心波长的解调,并进行了模拟仿真和实验分析,通过对低频振动信号应用匹配光栅解调检测以及对信号频谱分析,得知该技术方法可行,能有效检测低频振动. 相似文献
6.
7.
8.
光纤光栅在现代传感领域应用广泛,但交叉敏感特性严重制约了其发展。针对光纤光栅在传感领域应用中存在温度与应力交叉敏感的问题,提出了一种基于遗传算法的解调方案,建立了遗传算法的快速解调模型,经过数学分析得到遗传算法目标方程、适应度函数,系统讨论了参考光纤光栅与传感光栅的反射中心波长不同、反射峰值不同情况下的解调结果。数值研究结果表明,提出的基于遗传算法的解调方案可以有效地解调出参考光纤光栅与传感光栅参数不同情况下的温度与应变变化,有效地区分出温度与应力的影响,温度检测精度为0.1 ℃,应力检测精度为1.5 。打破了传统参考光纤光栅法要求传感光栅与参考光栅一致的要求,降低了系统的组建难度。 相似文献
9.
光纤光栅(FBG)传感以其强大的优越性受到了社会的广泛关注,波长编码信号解调是实现光纤光栅多参量、多点分布式传感网络的关键技术.针对几种典型的光纤光栅解调方法做了简单介绍,重点分析了压电陶瓷在干涉解调系统中的调相测量作用.通过改变干涉系统的臂长差来产生一个动态的干涉信号,使干涉信号在时域上获得延伸,将包含被测传感信息的波长信号转变成相位信号;并用非平衡Mach-Zehnder干涉解调系统检测了应变信号,取得了较好的实验效果.实验测得系统的相位检测灵敏度为0.82 (° )/με,可用于静态应变和动态应变的检测. 相似文献
10.
11.
Michael Reilly 《半导体技术》2004,29(12)
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system. 相似文献
12.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
13.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
14.
Thomas M.Trexler 《半导体技术》2004,29(5)
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test. 相似文献
15.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high. 相似文献
16.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation. 相似文献
17.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible. 相似文献
18.
Qi-jiang Ran Pei-de Han Yu-jun Quan Li-peng Gao Fan-ping Zeng Chun-hua Zhao 《光电子快报》2008,4(4):239-242
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. 相似文献
19.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
20.
YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献