| 高精度CMOS Wildar多值电压带隙基准电路设计 |
| |
| 引用本文： | 王永寿,吴金,郑丽霞,赵霞.高精度CMOS Wildar多值电压带隙基准电路设计[J].半导体技术,2009,34(12). |
| |
| 作者姓名： | 王永寿 吴金 郑丽霞 赵霞 |
| |
| 作者单位： | 东南大学IC学院,南京,210096;东南大学IC学院,南京,210096;东南大学IC学院,南京,210096;东南大学IC学院,南京,210096 |
| |
| 摘 要： | 基于经典Wildar带隙基准结构,通过单级高增益低失调运放及其闭环负反馈设计,将电压求和模式输出与电阻负载驱动紧密结合,同时增加简单的单管并联高阶补偿结构,实现了一种具有较大负载驱动能力的高精度多值低压基准输出,解决了经典基准电路在补偿精度与PSRR方面的局限性.CSMC 0.5μm CMOS工艺仿真结果表明,在-40～125℃,一阶补偿的温度系数为6×10~(-6)/℃,输出电阻支路采用并联MOS管的高阶补偿后,温度系数下降到1.27×10~(-6)/℃,低频下电源抑制比达到-57 dB.
|
| 关 键 词： | 带隙基准 低压多路输出 温度系数 电源抑制比 |
Design of CMOS Wildar Bandgap Voltage Reference with High Precision Multi-Output |
| |
| Wang Yongshou,Wu Jin,Zheng Lixia,Zhao Xia.Design of CMOS Wildar Bandgap Voltage Reference with High Precision Multi-Output[J].Semiconductor Technology,2009,34(12). |
| |
| Authors: | Wang Yongshou Wu Jin Zheng Lixia Zhao Xia |
| |
| Abstract: | A high precision Widlar bandgap voltage reference with multi-output, load-drive capability, and improved structure of single-stage high-gain operational amplifier was presented. The PSRR performance was significantly improved with a high-gain operational amplifier, and its temperature coefficient was reduced by a simple compensation structure which was realized with only a MOS transistor. Simulated in CSMC 0.5 μm CMOS process, it has a temperature coefficient in-40 to 125℃ range of 6 × 10~(-6)/℃ , and 1.27 × 10~(-6)/℃ if second-order compensation is applied. Its PSRR is higher than-57 dB. |
| |
| Keywords: | bandgap reference low-voltage multi-output temperature coefficient PSRR |
| 本文献已被 万方数据 等数据库收录！ |
|
