| 一个新型CMOS电流模带隙基准源 |
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| 引用本文： | 幸新鹏,李冬梅,王志华.一个新型CMOS电流模带隙基准源[J].半导体学报,2008,29(7). |
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| 作者姓名： | 幸新鹏 李冬梅 王志华 |
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| 作者单位： | 1. 清华大学微电子学研究所,北京,100084
2. 清华大学电子工程系,北京,100084 |
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| 基金项目： | 国家自然科学基金，北京市科技发展基金 |
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| 摘 要： | 介绍了一个新型电流模带隙基准源,该带隙基准源的输出基准可以设计为任意大于硅材料的带隙电压(1.25V)的电压,避免在应用中使用运算放大器进行基准电压放大.同时该结构消除了传统电流模带隙基准源的系统失调.该带隙基准源已通过UMC 0.18μm混合信号工艺验证.在1.6V电源电压下,该带隙基准源输出1.45V的基准电压,同时消耗27μA的电流.在不采用曲率补偿的情况下,输出基准的温度系数在30℃到150℃的温度范围内可以达到23ppm/℃.在电源电压从1.6变化到3V的情况下,带隙基准源的输入电压调整率为2.1mV/V.该带隙基准源在低频(10Hz)的电源电压抑制比为40dB.芯片面积(不包括Pads)为0.088mm2.
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| 关 键 词： | CMOS 带晾基准源 电流模 |
A Novel CMOS Current Mode Bandgap Reference |
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| Xing Xinpeng,Li Dongmei,Wang Zhihua.A Novel CMOS Current Mode Bandgap Reference[J].Chinese Journal of Semiconductors,2008,29(7). |
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| Authors: | Xing Xinpeng Li Dongmei Wang Zhihua |
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| Abstract: | A novel CMOS bandgap reference is presented. The output reference of this new current mode structure can be set to an arbitrary value above the bandgap voltage of silicon, avoiding offset in application. It also overcomes the systematic mismatch of conventional current mode bandgap references. The proposed bandgap reference has been implemented in UMC 0.18μm mixed mode technology. Under the supply voltage of 1.6V, the proposed bandgap reference provides an output reference of 1.45V and consumes 27μA of supply current. Using no curvature compensation, it can reach a temperature coefficient of 23ppm/℃ from 30 t0 150℃ with a line regulation of 2.1mV/V from 1.6 to 3V and a PSRR of 40dB at DC frequency. The chip area of the bandgap reference (without pad) is 0.088mm2. |
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| Keywords: | CMOS bandgap reference current mode |
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