光收发器中光电集成接收芯片的实现

针对应用于850nm光通信中的10/100Mbit/s收发器,提出采用0.5μm标准CMOS工艺对其光接收芯片实现Si基单片集成。整体芯片面积为0.6mm2,共集成了一个双光电二极管的(DPD)光电探测器和一个跨阻前置放大电路,功耗为100mW,并给出了具体的测试性能结果。结果表明,在850nm光照下,光接收芯片带宽达到53MHz,工作速率为72Mbit/s。重点介绍了DPD光电探测器的原理和结构,并给出了相应的制造过程和电路等效模型,对整个光接收芯片进行了多种实用性测试,可以满足系统的性能要求。

Realization of a Monolithic Optoelectronic Integrated Receiver Chip for Optical Communication Transceiver

Monolithically integrated optical reeeiver was designed in 0.5 μm standard CMOS technology, used in 850 nm optical transceivers of 10/100 Mbit/s. The chip size is 0.6 mm~2, integrating a double photodiode (DPD) detector and a transimpedance preamplifier. The power dissipation is 100 mW, and the result of test about OEIC was given. Test results show that the optical receiver has a bandwidth of 53 MHz and the bit rate of 72 Mbit/s in 850 nm light. The principle and structure of the DPD was introduced, the corresponding manufacturing process and circuit equivalent model were given. The OEIC meets the system performance requirements.