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排序方式: 共有540条查询结果,搜索用时 31 毫秒
1.
Hua Zhu Hai Zhang Tian-hao Zhang Shi-jin Yu Ping-chun Guo Yan-xiang Wang Zhi-sheng Yang 《Ceramics International》2021,47(12):16980-16985
Indium Tin Oxide (ITO) films were prepared, at room temperature, on a fluorphlogopite substrate using magnetron sputtering technology. At various temperatures of 500 °C, 600 °C, 700 °C, 800 °C, and 900 °C, the samples were (had) annealed for 2 h (a 2-h duration). The results showed improvement in the crystalline performance of ITO film at selected annealing temperatures, with a significant reduction in resistivity at 800 °C. The lowest resistivity is 4.08 × 10?4 Ω-cm, which is nearly an order of magnitude lower than the unannealed sample. All samples have an average light transmittance above 85% in the visible light range (400–800 nm), and with increasing annealing temperature, the average light transmittance tends to decrease. Besides, at the sensitive wavelength of 550 nm, the light transmittance is as high as 93.74%. The sheet resistance testing of the sample was through the number of bending times, which revealed that with the increase of the number of bending, the sheet resistance increases. However, after 1200 bending times, the change rate of the sheet resistance remains below 5%. Thus, the ITO film prepared on the flexible fluorphlogopite substrate revealed excellent optical and electrical properties, good flexibility, and improved stability after high-temperature annealing, which guarantees successful application in flexible electronic devices. 相似文献
2.
Iqbal Ahmad Syed Mujtaba Shah Muhammad Nadeem Zafar Muhammad Naeem Ashiq Wei Tang Uzma Jabeen 《Ceramics International》2021,47(3):3760-3771
Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr1-xPrxFe2-yNiyO4 (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr3+ and Ni2+ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 109–1.94 × 109 Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications. 相似文献
3.
P. G. Muzykov Y. I. Khlebnikov S. V. Regula Y. Gao T. S. Sudarshan 《Journal of Electronic Materials》2003,32(6):505-510
To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. 相似文献
4.
基体温度对磁控溅射沉积ZAO薄膜性能的影响 总被引:8,自引:2,他引:6
利用中频交流磁控溅射方法 ,采用氧化锌铝陶瓷靶材 [w(ZnO) =98%、w(Al2 O3 ) =2 % ]制备了ZAO(ZnO∶Al)薄膜 ,观察了基体温度对ZAO薄膜的晶体结构、电学和光学性能的影响 ,采用X射线衍射仪对薄膜的结构进行了分析 ,采用光学分度计和电阻测试仪测量了薄膜的光学、电学特性 ,采用霍尔测试仪测量了薄膜的载流子浓度和霍尔迁移率。结果表明 :沉积薄膜时的基体温度对薄膜的结构、结晶状况、可见光透射率以及导电性有较大的影响。当基体温度为 2 5 0℃ ,Ar分压为 0 8Pa时 ,薄膜的最低电阻率为 4 6× 10 -4Ω·cm ,方块电阻为 35Ω时 ,可见光 (λ =5 5 0nm)透射率高达 92 0 %。 相似文献
5.
6.
利用理想的地质体积模型和电阻率测井的供电电流流过模型的导电机理,推导出一种不需要含水饱和度参数即能定量计算含水饱和度的方法,即岩性类比解释法。经过初步实践,该方法应用于砂泥岩地层的测井分析,效果良好。 相似文献
7.
本文提出了用混合烧成制取低温PTCR陶瓷材料的工艺方法,该方法和普通工艺相比,不仅降低BaTiO3陶瓷的工作温区,而且室温电阻率比普通工艺下的要小,即半导化程度比普通工艺要好。 相似文献
8.
Structural and electrical measurements of CdZnSe composite 总被引:1,自引:0,他引:1
V. Kishore Vibhav K. Saraswat N. S. Saxena T. P. Sharma 《Bulletin of Materials Science》2005,28(5):431-436
TheI—Vcharacterization and the electrical resistivity of selenium rich Se85Cd15-xZnx (x = 0, 3, 7, 11 and 15) system at room temperature have been studied. Samples were obtained using melt cooling technique. So
prepared samples were then characterized in terms of their crystal structure and lattice parameter using X-ray diffraction
method. The materials were found to be poly crystalline in nature, having zinc blend structure over the whole range of zinc
concentration. The measurements ofI—V bdcharacteristics have been carried out at different temperatures from room to 140°C. The electrical resistivity of the samples
with composition at room temperature has been found to vary between maximum 2.7 x 108 Ωm and minimum 7.3 x 105 Ωm and shows a maximum at 3 at. wt.% of Zn. The carrier activation energy of the samples with composition has also been determined
and found to vary from 0.026 eV to 0.111 eV. 相似文献
9.
利用测井资料评价储集层性质的探讨 总被引:2,自引:0,他引:2
根据对储集层之简化导电模型的理论分析,提出了一个由电阻率、孔隙度信息表示的、反映储层性质的“孔隙结构参数S”。实际应用表明,S参数在评价储集层性质、计算储层渗透率等方面具有一定的使用价值。 相似文献
10.
通过熔融共混方法制备导电高分子复合材料丙烯腈-苯乙烯-丙烯酸酯共聚物(ASA)/天然石墨(NGR)/炭黑(CB),采用电磁屏蔽测量仪、四探针电阻率测量仪和动态热机械分析仪对复合材料的电性能和力学性能进行详细研究。结果表明,ASA/NGR复合材料的体积电阻率随着炭黑含量增加而增加;同时在30 MHz~1500 MHz范围内,复合材料的电磁屏蔽性能从28 dB提高到38 dB,符合商业要求。炭黑的加入大大改善了材料力学性能,弯曲强度从31 MPa增加到41 MPa;动态储能模量从4.6 GPa增加到14.5 GPa。 相似文献