首页 | 官方网站   微博 | 高级检索  
     


Synthesis,characterization and charge transport properties of Pr–Ni Co-doped SrFe2O4 spinel for high frequency devices applications
Authors:Iqbal Ahmad  Syed Mujtaba Shah  Muhammad Nadeem Zafar  Muhammad Naeem Ashiq  Wei Tang  Uzma Jabeen
Abstract:Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr1-xPrxFe2-yNiyO4 (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr3+ and Ni2+ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 109–1.94 × 109 Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.
Keywords:DC electrical Resistivity  Grain boundaries  Charge transfer resistance  Dielectric constant  High frequency devices
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号