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采用提拉法生长了掺0.4%(摩尔分数,下同)Nd2O3和分别掺1.0%、3.0%、5.0%、7.0%MgO的4种Nd∶Mg∶LiNbO3(Nd∶Mg∶LN)晶体。通过透射光束变形法测试晶体抗光损伤能力。结果表明:0.4%Nd∶7.0%Mg∶LN和0.4%Nd∶5.0%Mg∶LN两种晶体抗光损伤能力皆达到阈值浓度,抗光损伤能力比0.4%Nd∶3.0%Mg∶LN和0.4%Nd∶1.0%Mg∶LN晶体提高2个数量级。利用980nm激光二极管测试晶体的荧光光谱。在500~900nm的光谱范围内,出现2个光发射带,发光强度最强的近红外发射波长为840nm,对应4 I9/2→2 H9/2,4 F5/2能级跃迁。840nm处荧光来源于双光子过程,该上转换荧光在生物医学领域有着应用前景。 相似文献
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In:Ho:LiNbO3 crystals doped with various concentrations of In3+(0, 1 mol.%, 3 mol.%, 5 mol.%), fixed concentrations of Ho3+ (1 mol.%) were grown by Czochralski method. The X-ray powder diffraction, infrared and UV-visible absorption spectra were measured and modified. Judd-Ofelt approach was employed to study the effect of In doping on spectroscopic properties of Ho:LiNbO3 crystals. In concentrations in crystals were analyzed by an inductively coupled plasma optical emission spectrometry (ICP-OE/MS). For In (3 mol.%):Ho (1 mol.%):LiNbO3 crystal, the obtained intensity parameters were: Ω2=9.6563, Ω4=4.2195, Ω6=14.1526. The results showed that the Ω2 and Ω6 parameters increased with the increase of In3+ concentration. When the In doping concentration was up to 5 mol.%, Ω2 and Ω6 suddenly decreased. In2O3 incorporation had a strong effect on the radiative lifetime, but had less influence on fluorescence branching ratios. The effective distribution coefficient of In3+ in In:Ho:LiNbO3 crystals was less than 1 and increased with increasing concentration of In3+ in the melt. 相似文献
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本文采用Czchrzlski技术生长出优质的Mg:Er:LiNbO3[(X=2%, 4%, 6%, 8%, y=% (mol%))]晶体,测试Mg:Er:LiNbO3晶体的光损伤阈值,红外光谱和紫外—可见吸收光谱,Mg2+浓度增加抗光损伤能力增加,其中Mg(6mol%):Er:LiNbO3和Mg(8mol%):Er:LiNbO3晶体抗光损伤阈值比LiNbO3晶体提高二个数量级以上。它们的红外光谱OH-吸收峰移到3535cm-1附近。Mg:Er:LiNbO3晶体中随着Mg2+浓度增加吸收边紫移程度增大。研究Mg:Er:LiNbO3晶体抗光损伤阈值增强机理,OH-吸收峰移动机理和吸收边移动机理。采用0.523μm激光进行泵浦获得高的利用率。在波长510—580nm范围内得到Mg:Er:LiNbO3晶体稳态发射谱。掺进4mol%的MgO是Mg:Er:LiNbO3晶体寿命最长的晶体。 相似文献
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在LiNbO3中掺杂光折变敏感杂质离子Fe^2 /Fe^3 和抗光致散射杂质离子Mg^2 ,以提拉法生长Mg∶Fe∶LiNbO3晶体。测试晶体吸收光谱、红外光谱,Mg∶Fe∶LiNbO3晶体的吸收边相对Fe∶LiNbO3晶体发生紫移。当Mg^2 浓度达到阈值浓度,Mg(6%):Fe∶LiNbO3晶体OH^-吸收峰由3482cm^-1移到3529cm^-1,测试晶体的位相共轭反射率和响应时间,计算光电导。Mg(6%):Fe∶LiNbO3晶体的响应速度和光电导比Fe∶LiNbO3晶体有较大提高。 相似文献
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ZnWO4晶体着色和消色机理的研究 总被引:6,自引:0,他引:6
生长不掺杂但原料纯度不同的ZnwO_4晶体和掺人Sb_2O_2、CeO_2、Ag_2O等杂质的掺杂znwO_4晶体。晶体在氧气中高温退火,测试晶体退火前后的性能,探讨ZnwO_4晶体着色和消色机理;提出ZoWO_4晶体的颜色是由于色心复合体“Fe~(2+)+[O~(2-)]+电子”引起的。 相似文献
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