Resistive organic memory devices based on nitrogen-doped CNTs/PSS composites

Journal of Materials Science: Materials in Electronics - Non-volatile organic memory devices were fabricated using polystyrene sulfonate (PSS)?+?nitrogen-doped multi-walled carbon...     

Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C-H, C-OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current-voltage (I-V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed.     

Study of the effect of DMSO concentration on the thickness of the PSS insulating barrier in PEDOT:PSS thin films

One of the most used secondary dopants in thin film processing of PEDOT:PSS is dimethyl sulfoxide (DMSO). In this work, we present results that explain, from the point of view of impedance spectroscopy, the mechanism of the increase in the conductivity observed on films based on PEDOT:PSS. The results obtained with this technique, combined with others such as AFM, and Raman and UV–vis–NIR spectroscopies, clearly show that there is a thinning of the insulating barrier of PSS surrounding conductive grains of PEDOT. It is shown that the thickness of the insulating barrier is related strongly and inversely with the onset frequency of AC conductivity. However, this is not the only existing effect, because for values beyond the optimal concentration of DMSO, we observe a decrease in the conductivity related with an increase of the separation of the PEDOT grains. The AC measurements and the AFM images also show the clear interplay between the increase of the PEDOT average grain size and the separation between them.     

A color image watermarking framework for copyright protection of stereo images based on binocular just noticeable difference and LU decomposition

Multimedia Tools and Applications - The copyright protection of three-dimensional (3D) content is a matter of interest in artistic and creative works due to the rights of the holder for the...     

Adaptive removable visible watermarking technique using dual watermarking for digital color images

This paper proposes a removable visible watermarking system based on a dual watermark technique and blind removal. A visible watermark pattern is embedded in the cosine discrete transform (DCT) domain, taking into consideration the texture and luminance features of the watermark and host images to create a visible watermarked image. To prevent illegal visible watermark removal, the original watermark is embedded in an invisible manner in the visible watermarked image by employing the Quantization Index Modulation-Dither Modulation (QIM-DM) technique, thus ensuring that the original watermark cannot be obtained by malicious attacks. The visible watermark removal process is carried out using only the correct user’s keys, without the need for additional information, such as the original watermark or the original host image, which allows a high-quality image to be obtained; however, if the user’s keys used in the removal process are wrong, the visible watermarked image suffers higher distortion in its content, even in non-visible watermarked regions. The experimental results show that the proposed system outperforms previous related works in terms of blind removal, preservation of the quality of the unmarked recovered image, and higher visual degradation of the content in the recovered image if an illegal removal attempt is performed.     

Organic low voltage rewritable memory device based on PEDOT:PSS/f-MWCNTs thin film

We report on devices constructed using a small quantity (?0.01 wt.%) of functionalized multiwalled carbon nanotubes (f-MWCNTs) embedded in a conducting polymer (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS) matrix and aluminum top electrodes, prepared on indium-tin-oxide (ITO) substrates. Our ITO/(PEDOT:PSS + f-MWCNTs)/Al devices show current bistability. The low resistance ON-state, as well as the high resistance OFF state, retain the information for hours and are stable after hundreds of write–read–erase–read (WRER) cycles, being potentially interesting for erasable and rewritable volatile memory device applications. Moreover, the operation voltages used for performing these WRER cycles are very low. The threshold voltage for OFF to ON switching can be adjusted changing the f-MWCNTs concentration. Our results suggest that the nanotubes are necessary for the production of an inhomogeneous electric field playing a role in the electroforming (dielectric breakdown) of the aluminum oxide layer at the Al₂O₃/(PEDOT:PSS) interface.     

Bulk heterojunction organic photovoltaic based on polythiophene–polyelectrolyte carbon nanotube composites

It is shown that carbon nanotubes can be used to enhance carrier mobility for efficient removal of the charges in thin film polymer-conjugated/fullerene photovoltaic devices. The fabricated photovoltaic devices consist of poly(3-octylthiophene) (P3OT) polymer blended with undoped multiwalled carbon nanotubes (MWNTs) and carbon nanotubes doped with nitrogen (CNx-MWNTs). Nanophase formation and dispersion problems associated with the use of carbon nanotubes in polymer devices were addressed through the generation of functional groups and electrostatic attaching of the polyelectrolyte poly(dimethyldiallylamine) chloride (PDDA) in both MWNTs and CNx-MWNT systems. The resultant nanophase was highly dispersed allowing for excellent bulk heterojunction formation. Our results indicate that CNx-MWNTs enhance the efficiency of P3OT solar cells in comparison with MWNTs.