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Resistive organic memory devices based on nitrogen-doped CNTs/PSS composites
Authors:Sánchez-Vásquez  J D  Portillo-Rodríguez  B  Tovar-Martínez  E  Reyes-Reyes  M  López-Sandoval  R
Affiliation:1.Advanced Materials Department, IPICYT, Camino a la Presa San José 2055, Col. Lomas 4a sección, San Luis Potosí, 78216, Mexico
;2.Instituto de Investigación en Comunicación óptica, Universidad Autónoma de San Luis Potosí, álvaro Obregón 64, San Luis Potosí, 78000, Mexico
;
Abstract:Journal of Materials Science: Materials in Electronics - Non-volatile organic memory devices were fabricated using polystyrene sulfonate (PSS)?+?nitrogen-doped multi-walled carbon...
Keywords:
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