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Temperature has great influence on the stacking fault energy (SFE). Both SFE and dr0/ d T for Fe-based alloys containing substitutional or interstitial atoms increase with increasing tempera-ture. Based on the thermodynamic model of SFE, the equation dr0/dT=drcn/dT+drseg/dT+drMG/dT and thoseexpressions for three items involved are established. The calculated dr0/dT is generally consistent with the experimental. The influence of chemical free energy on the temperature dependence of SFE is almost constant, and is obviously stronger than that of magnetic and segregation contributions. The magnetic transition and the segregation of alloying elements at stacking faults cause a decrease in SFE of the alloys when temperature increases; that is, drMG/dT<0 and dyseg/dT<0. Meanwhile, such an influence decreases with increasing temperature, except for the drseg/d 7 of Fe-Mn-Si alloys. With these results, the experimenal phenomena that the SFE of Fe-based alloys is not zero at the thermo-dynamically equilibrated tem 相似文献
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The relationship between the electronic structure of FCC phase in Fe-Mn-Si alloy and its stability has been studied by using the discrete variational method based on the first principle. The reason why Mn and Si elements have different influences on the stacking fault energy may be related to the electron concentration ( e/a). Si reduces the hole number of 3d band while Mn is rather complicated . The binding energy has been calculated and the experimental results that martensite start temperature (Ms) varies with Si and Mn are explained. When the external stress is exerted in three directions, the electronic structure, the total density of states, the energy gap at Fermi energy level( EF) and the energy degeneracy will change into other states. When the different external stresses are exerted in one direction, 3d or 4s orbital occupations of the central atom decrease, the partial density of states seems to be thinner and its peak increases at EF, the bond orbit shrinks in the direction of the external st 相似文献
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利用Stroh 位错塞积模型解释了L12 结构Al67 Mn8Ti25 合金室温解理裂纹的萌生。计算表明,位错塞积优先在与滑移面成35 .3°方向诱发微裂纹, 导致解理断裂。经室温弯曲断口解理面取向的电子背散射衍射(EBSD) 测试结果验证表明,L12 结构Al67 Mn8Ti25 合金室温解理断裂裂纹优先在{110} 晶面萌生 相似文献
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利用透射电子显微镜研究了PST双相TiAl晶体高温变形后的位错组态。发现微孪晶变形、1/2<110]单位位错、<011]超点阵位错、1/2<112]超点阵位错均参与了变形。螺型<011]超点阵位错可在{100}面上分解,构成Kear-Wilsdorf锁。400℃,600℃变形时由1/2<112]位错分解形成的层错偶极子仍然存在,但数量减少。850℃变形时未发现层错偶极子,但这时1/2<112]刃型可动位错数量增加。原位加热观察表明,层错偶极子在650℃时完全消失。本文讨论了这些位错特征对TiAl合金韧脆转变特征的影响。 相似文献
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