排序方式: 共有3条查询结果,搜索用时 15 毫秒
1
1.
Korolkov O. M. Kozlovski V. V. Lebedev A. A. Sleptsuk N. Toompuu J. Rang T. 《Semiconductors》2019,53(7):975-978
Semiconductors - The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied.... 相似文献
2.
P. A. Ivanov I. V. Grekhov A. S. Potapov O. I. Kon’kov N. D. Il’inskaya T. P. Samsonova O. Korol’kov N. Sleptsuk 《Semiconductors》2012,46(3):397-400
Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated
(based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the
main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations
(density ∼104 cm−2), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a
factor of 10 at optimal separation, 8 μm between local p-type regions). 相似文献
3.
P. A. Ivanov A. S. Potapov T. P. Samsonova O. Korol’kov N. Sleptsuk 《Semiconductors》2011,45(10):1306-1310
Deep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8–9) × 1014 cm−3. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers
in the n-type region near the metallurgical boundary of the p-n junction. 相似文献
1