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Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
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| Authors: | Korolkov O M Kozlovski V V Lebedev A A Sleptsuk N Toompuu J Rang T |
| Affiliation: | 1.Tallinn University of Technology, 19086, Tallinn, Estonia ;2.Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia ;3.Ioffe Institute, 194021, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied.... |
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