Fe基合金薄带磁畴结构的磁力显微镜观察

采用单辊快焠法制备Fe_(73.3)Cu_1Nb_3Si_(13.5)B_9非晶合金薄带,经550℃自由退火和171 MPa张应力退火处理,利用磁力显微镜(MFM)观察了自由退火和应力退火薄带表面磁畴结构及横断面介观结构。结果表明,自由退火样品具有均匀分布的纳米晶粒及易磁化方向随机分布的迷宫畴,应力退火样品具有方向优势的颗粒团聚及易磁化轴在面内的带状畴,这两种磁畴结构的形成可能与晶粒的晶化行为密切相关。     

八羟基喹啉镉薄膜制备及其光学特性

用真空蒸镀方法,在玻璃衬底上制备了衬底温度不同的八羟基喹啉镉薄膜.XRD分析表明,八羟基喹啉镉薄膜呈多晶态,且衬底温度越高,衍射峰越强,薄膜的结晶性能逐渐变好,结晶晶粒尺度也越大.AFM研究表明,衬底温度升高,薄膜表面形貌越均匀有序,质量变好.MM-16相调制型椭圆偏振光谱仪研究发现,衬底温度升高导致反蒸发增强,薄膜生长速率减小,随着入射光波长的增加,薄膜的折射率和消光系数逐渐减小.随着衬底温度升高,因薄膜晶粒尺度增大,折射率和消光系数也增大;并给出了它们的变化范围.     

八羟基喹啉镉薄膜制备及其光学特性

用真空蒸镀方法,在玻璃衬底上制备了衬底温度不同的八羟基喹啉镉薄膜.XRD分析表明,八羟基喹啉镉薄膜呈多晶态,且衬底温度越高,衍射峰越强,薄膜的结晶性能逐渐变好,结晶晶粒尺度也越大.AFM研究表明,衬底温度升高,薄膜表面形貌越均匀有序,质量变好.MM-16相调制型椭圆偏振光谱仪研究发现,衬底温度升高导致反蒸发增强,薄膜生长速率减小,随着入射光波长的增加,薄膜的折射率和消光系数逐渐减小.随着衬底温度升高,因薄膜晶粒尺度增大,折射率和消光系数也增大;并给出了它们的变化范围.     

基于氧化石墨烯可饱和吸收体的低阈值被动调Q锁模Tm,Ho…LiLuF_4激光器

利用垂直生长法制备的氧化石墨烯(GO)作为可饱和吸收体,结合特殊设计的低阈值谐振腔,在Tm,Ho…LiLuF_4全固态激光器中实现了低阈值被动调Q锁模运转。出光阈值功率低至73mW,稳定锁模阈值功率为663mW,对应GO可饱和吸收体上功率密度为76.4μJ·cm~(-2)。典型的调Q脉冲包络重复频率为104.2kHz,脉宽约为30μs,包络下锁模脉冲序列的重复频率为178.6 MHz,调制深度接近100%。     

基于过渡金属氧化物薄膜为连接层的叠层有机电制发光器件的数值模型

By utilizing a two-step process to express the charge generation and separation mechanism of the transition metal oxides （TMOs） interconnector layer, a numerical model was proposed for tandem organic light emitting diodes （OLEDs） with a TMOs thin film as the interconnector layer. This model is valid not only for an n-type TMOs interconnector layer, but also for a p-type TMOs interconnector layer. Based on this model, the influences of different carrier injection barriers at the interface of the electrode/organic layer on the charge generation ability of interconnector layers were studied. In addition, the distribution characteristics of carrier concentration, electric field intensity and potential in the device under different carrier injection barriers were studied. The results show that when keeping one carrier injection barrier as a constant while increasing another carrier injection barrier, carri- ers injected into the device were gradually decreased, the carrier generation ability of the interconnector layer was gradually reduced, the electric field intensity at the interface of the organic/electrode was gradually enhanced, and the electric field distribution became nearly linear： the voltage drops in two light units gradually became the same. Meanwhile, the carrier injection ability decreased as another carrier injection barrier increased. The simulation re- sults agree with the experimental data. The obtained results can provide us with a deep understanding of the work mechanism of TMOs-based tandem OLEDs.