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基于过渡金属氧化物薄膜为连接层的叠层有机电制发光器件的数值模型
引用本文:路飞平,彭应全,邢永忠.基于过渡金属氧化物薄膜为连接层的叠层有机电制发光器件的数值模型[J].半导体学报,2014,35(4):044005-9.
作者姓名:路飞平  彭应全  邢永忠
基金项目:国家自然科学基金;高等学校博士学科点专项科研基金
摘    要:By utilizing a two-step process to express the charge generation and separation mechanism of the transition metal oxides (TMOs) interconnector layer, a numerical model was proposed for tandem organic light emitting diodes (OLEDs) with a TMOs thin film as the interconnector layer. This model is valid not only for an n-type TMOs interconnector layer, but also for a p-type TMOs interconnector layer. Based on this model, the influences of different carrier injection barriers at the interface of the electrode/organic layer on the charge generation ability of interconnector layers were studied. In addition, the distribution characteristics of carrier concentration, electric field intensity and potential in the device under different carrier injection barriers were studied. The results show that when keeping one carrier injection barrier as a constant while increasing another carrier injection barrier, carri- ers injected into the device were gradually decreased, the carrier generation ability of the interconnector layer was gradually reduced, the electric field intensity at the interface of the organic/electrode was gradually enhanced, and the electric field distribution became nearly linear: the voltage drops in two light units gradually became the same. Meanwhile, the carrier injection ability decreased as another carrier injection barrier increased. The simulation re- sults agree with the experimental data. The obtained results can provide us with a deep understanding of the work mechanism of TMOs-based tandem OLEDs.

关 键 词:有机发光二极管  过渡金属氧化物  数值模型  串联式  互连  载流子注入  TMOS  注入势垒

Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer
Lu Feiping,Peng Yingquan and Xing Yongzhong.Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer[J].Chinese Journal of Semiconductors,2014,35(4):044005-9.
Authors:Lu Feiping  Peng Yingquan and Xing Yongzhong
Affiliation:College of Physics and Information Science, Tianshui Normal University, Tianshui 741000, China;Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;College of Physics and Information Science, Tianshui Normal University, Tianshui 741000, China
Abstract:By utilizing a two-step process to express the charge generation and separation mechanism of the transition metal oxides (TMOs) interconnector layer, a numerical model was proposed for tandem organic light emitting diodes (OLEDs) with a TMOs thin film as the interconnector layer. This model is valid not only for an n-type TMOs interconnector layer, but also for a p-type TMOs interconnector layer. Based on this model, the influences of different carrier injection barriers at the interface of the electrode/organic layer on the charge generation ability of interconnector layers were studied. In addition, the distribution characteristics of carrier concentration, electric field intensity and potential in the device under different carrier injection barriers were studied. The results show that when keeping one carrier injection barrier as a constant while increasing another carrier injection barrier, carriers injected into the device were gradually decreased, the carrier generation ability of the interconnector layer was gradually reduced, the electric field intensity at the interface of the organic/electrode was gradually enhanced, and the electric field distribution became nearly linear: the voltage drops in two light units gradually became the same. Meanwhile, the carrier injection ability decreased as another carrier injection barrier increased. The simulation results agree with the experimental data. The obtained results can provide us with a deep understanding of the work mechanism of TMOs-based tandem OLEDs.
Keywords:tandem organic light-emitting diodes  numerical model  interconnector layer  transition metal oxide
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