排序方式: 共有39条查询结果,搜索用时 18 毫秒
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This paper presents a 0.6 V 10 bit successive approximation register (SAR) ADC design dedicated to the wireless sensor network application. It adopts a monotonic switching scheme in the DAC to save chip area and power consumption. The main drawback of the monotonic switching scheme is its large common mode shift and the associated comparator offset variation. Due to the limited headroom at the 0.6 V supply voltage, the conventional constant current biasing technique cannot be applied to the dynamic comparator. In this design, a common mode stabilizer is introduced to address this issue in low-voltage design. The effectiveness of this method is verified through both simulation and measurement results. Fabricated with 1P8M 0.13 μm CMOS technology, the proposed SAR ADC consumes 6.3 μW at 1 MS/s from a 0.6 V supply, and achieves 51.25 dB SNDR at the Nyquist frequency and FOM of 21 fJ/conversion-step. The core area is only 120 × 300 μm^2. 相似文献
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基于SMIC 40 nm CMOS工艺,提出了一种可适用于背板与芯片互连的10 Gbit/s低功耗发射机。该发射机由半率前馈均衡器、时钟信号接收电路和源串联终端(SST)驱动器组成。前馈均衡器采用半率结构,以降低发射端的时钟信号频率。通过对发射端信号进行预加重,消除了码间干扰的影响。改进了SST驱动器的输出阻抗校准电路,解决了输出阻抗在不同工艺角下的波动问题。在相同输出摆幅下,SST电压模式驱动器的功耗为传统电流模式(CML)驱动器的1/4。结果表明,发射机的数据率为10 Gbit/s,传输信道在5 GHz Nyquist频率处的衰减为14.2 dB。在1.1 V电源电压下,传输信道输出信号的眼高为147 mV,眼宽为79 ps。发射机的总功耗为20.6 mW。 相似文献
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This paper presents a 10-bit 50-MS/s subrange successive-approximation register (SAR) analog-to-digital converter (ADC) composed of a 4-bit SAR coarse ADC and a 6-bit SAR fine ADC. In the coarse ADC, multi-comparator SAR architecture is used to reduce the digital logic propagation delay, and a traditional asynchronous SAR ADC with monotonic switching method is used as the fine ADC. With that combination, power dissipation also can be much reduced. Meanwhile, a modified SAR control logic is adopted in the fine ADC to speed up the conversion and other techniques, such as splitting capacitors array, are borrowed to reduce the power consumption. Fabricated with 1P8M 130-nm CMOS technology, the proposed SAR ADC achieves 51.6-dB signal to noise and distortion ratio (SNDR) and consumes 186 μ W at 50 MS/s with a 1-V supply, resulting in a figure of merit (FOM) of 12 fJ/conversion-step. The core area is only 0.045 mm2. 相似文献
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本文介绍了一种CMOS全片集成的功率放大器,满足802.15.4规范,并采用采用了中和电容技术。采用了一种新型的采用了数字接口的结构,可以使基带信号直接控制PA的输出功率,从而无需DAC。采用中和电容技术以提高反向隔离度。该芯片采用SMIC 0.18um工艺流片。 测试结果表明,在1dB压缩点处,本文所提出的功率放大器具有13.5dB的功率增益,最大3.48dBm的输出功率和35.1%的PAE。核心面积为0.73mm*0.55mm。 相似文献
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提出了一种应用于10 Gb/s高速串并接口电路(Serdes)的高性能锁相环。采用正交压控振荡器(QVCO)实现4路等相位间隔的5 GHz时钟,输出采用2分频单转差缓冲器,实现可忽略相差的8路等相位间隔的2.5 GHz时钟。电荷泵中采用负反馈技术,以提高电流匹配性能。在SMIC 40 nm工艺下完成设计,在 1.1 V的供电电压下,锁相环的总电流为7.6 mA,输出5 GHz时钟在10 kHz~100 MHz积分范围内的均方根抖动约为107 fs,芯片尺寸仅为780 μm×410 μm。 相似文献
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基于GF 130 nm CMOS工艺,设计了一种低参考杂散、高电源噪声抑制比(PSNR)的I型锁相环。相较于电荷泵型锁相环,I型锁相环存在锁定范围小、参考杂散性能差等缺点。此外,压控振荡器是对电源噪声敏感的模拟电路,电源线上的噪声会恶化振荡器的输出抖动性能。通过引入采样保持电路和电源电压整形器,降低了I型锁相环的参考杂散和电源噪声敏感系数。仿真结果表明,设计的I型锁相环的工作频率范围为2.1~2.8 GHz,参考杂散为-66 dBc,PSNR为-25 dB,功耗为10 mW,芯片占用面积为0.009 mm2。 相似文献
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提出了一种低功耗连续时间多比特Δ-Σ调制器架构。该架构充分利用了Δ-Σ结构高分辨率和连续时间结构高速度的特点。将量化器的输出分为最高有效位(MSB)和最低有效位(LSB),LSB被反馈到量化器和DAC的输入,提高了系统的分辨率和线性度,降低了系统的硬件复杂度。除此之外,积分器的输出摆幅也显著减小,大大降低了运算放大器对带宽和增益的要求。使用SAR量化器中的开关电容DAC阵列进行环路延迟补偿,进一步提高了环路滤波器功率效率。通过仿真分析,验证了提出架构的正确性。 相似文献